Toshiba GT20N135SRA S1E Discrete N Channel IGBT with TO 247 Package and Integrated Freewheeling Diode
Key Attributes
Model Number:
GT20N135SRA,S1E
Product Custom Attributes
Td(off):
-
Pd - Power Dissipation:
312W
Operating Temperature:
-
Td(on):
-
Collector-Emitter Breakdown Voltage (Vces):
1.35kV
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Gate Charge(Qg):
185nC
Turn-On Energy (Eon):
-
Mfr. Part #:
GT20N135SRA,S1E
Package:
TO-247
Product Description
Product Overview
The GT20N135SRA is a discrete Silicon N-Channel IGBT from Toshiba, designed for high-speed switching applications. It features a 6.5th generation IGBT with an integrated freewheeling diode (FWD), offering low saturation voltage and high junction temperature capabilities. This product is dedicated to voltage-resonant inverter switching, soft switching, induction cooktops, and home appliance applications.
Product Attributes
- Brand: Toshiba
- Model: GT20N135SRA
- Type: Discrete IGBT
- Channel: N-Channel
- Generation: 6.5th
- Packaging: TO-247
- Certifications: RoHS Compatible (indicated by [[G]]/RoHS or [[G]]/RoHS [[Pb]])
- Production Start: 2019-10
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Collector-emitter voltage | VCES | 1350 | V | (Tc = 25 ) |
| Gate-emitter voltage | VGES | 25 | V | |
| Collector current (DC) | IC | 40 | A | (Tc = 100 ) |
| Collector current (1 ms) | IC | 20 | A | (Tc = 25 ) |
| Non-repetitive peak collector current | ICSM | 80 | A | (Tc = 25 ) |
| Diode forward current (DC) | IF | 40 | A | (Note 2) (Tc = 100 ) |
| Diode forward current (100 s) | IFP | 20 | A | (Note 1) (Tc = 25 ) |
| Collector power dissipation | PC | 80 | W | (Tc = 25 ) |
| Junction temperature | Tj | 175 | (max) | |
| Storage temperature | Tstg | -55 to 175 | ||
| Mounting torque | TOR | 0.8 | Nm | (Tc = 25 ) |
| Junction-to-case thermal resistance | Rth(j-c) | 0.48 | /W | (Max) |
| Gate leakage current | IGES | 100 | nA | VGE = 25 V, VCE = 0 V |
| Collector cut-off current | ICES | 100 | A | VCE = 1350 V, VGE = 0 V |
| Collector-emitter breakdown voltage | V(BR)CES | 1350 | V | IC = 0.5 mA, VGE = 0 V |
| Gate-emitter cut-off voltage | VGE(OFF) | 5.3 to 7.3 | V | IC = 40 mA, VCE = 5 V |
| Collector-emitter saturation voltage | VCE(sat)(1) | 1.60 | V | IC = 20 A, VGE = 15 V (pulse test) |
| Collector-emitter saturation voltage | VCE(sat)(2) | 1.83 | V | IC = 20 A, VGE = 15 V, Tc = 125 (pulse test) |
| Collector-emitter saturation voltage | VCE(sat)(3) | 2.00 | V | IC = 40 A, VGE = 15 V (pulse test) |
| Collector-emitter saturation voltage | VCE(sat)(4) | 2.40 | V | IC = 40 A, VGE = 15 V, Tc = 125 (pulse test) |
| Diode forward voltage | VF(1) | 1.75 | V | IF = 20 A, VGE = 0 V (pulse test) |
| Diode forward voltage | VF(2) | 1.80 | V | IF = 20 A, VGE = 0 V, Tc = 125 (pulse test) |
| Input capacitance | Cies | 2700 | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz |
| Reverse transfer capacitance | Cres | 35 | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz |
| Output capacitance | Coes | 42 | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz |
| Total gate charge | Qg | 185 | nC | VCE = 600 V, IC = 40 A, VGE = 15 V |
| Switching time (rise time) | tr | 0.09 | s | Resistive load |
| Switching time (turn-on time) | ton | 0.14 | s | Resistive load |
| Switching time (fall time) | tf | 0.25 | s | Inductive load |
| Switching time (turn-off time) | toff | 0.46 | s | Inductive load |
| Switching loss (turn-off switching loss) | Eoff(1) | 0.28 | mJ | Inductive load |
| Switching loss (turn-off switching loss) | Eoff(2) | 0.70 | mJ | Inductive load, Tc = 125 |
2504101957_TOSHIBA-GT20N135SRA-S1E_C17622325.pdf
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