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quality N Channel MOSFET Winsok Semicon WSR20N10 featuring trench technology and RoHS compliance for circuits factory
quality N Channel MOSFET Winsok Semicon WSR20N10 featuring trench technology and RoHS compliance for circuits factory
quality N Channel MOSFET Winsok Semicon WSR20N10 featuring trench technology and RoHS compliance for circuits factory
quality N Channel MOSFET Winsok Semicon WSR20N10 featuring trench technology and RoHS compliance for circuits factory

N Channel MOSFET Winsok Semicon WSR20N10 featuring trench technology and RoHS compliance for circuits

Key Attributes
Model Number: WSR20N10
Product Custom Attributes
Mfr. Part #:
WSR20N10
Package:
TO-220-3L
Product Description

WSR20N10 N-Channel MOSFET

The WSR20N10 is an N-Channel MOSFET utilizing advanced Trench MOSFET technology to achieve excellent RDS(ON) and low gate charge. This device is well-suited for battery protection and other switching applications, offering reliable and rugged performance. It is available in lead-free and green (RoHS compliant) options and has a Moisture Sensitivity Level of MSL1.

Product Attributes

  • Brand: Winsok
  • Type: N-Channel MOSFET
  • Technology: Advanced Trench MOSFET
  • Certifications: RoHS Compliant (Green Devices Available)
  • Moisture Sensitivity Level: MSL1 (per JEDEC J-STD-020D)

Technical Specifications

Parameter Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
BVDSS (Drain-Source Voltage) 100 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) TC=25°C 20 A
ID (Continuous Drain Current) TC=100°C 12 A
IDM (Pulse Drain Current) TC=25°C 45 A
PD (Maximum Power Dissipation) TC=25°C 30 W
PD (Maximum Power Dissipation) TC=100°C 17 W
RθJA (Thermal Resistance-Junction to Ambient) 62.5 °C/W
RθJC (Thermal Resistance-Junction to Case) 1 °C/W
IAS (Avalanche Current, Single pulse) L=0.5mH 8 A
EAS (Avalanche Energy, Single pulse) L=0.5mH 90 mJ
TSTG (Storage Temperature Range) -55 150 °C
TJ (Maximum Junction Temperature) -55 150 °C
Electrical Characteristics
BVDSS (Drain-Source Breakdown Voltage) VGS=0V , ID=250μA 100 --- --- V
IDSS (Zero Gate Voltage Drain Current) VDS=48V , VGS=0V --- --- 1.0 μA
IDSS (Zero Gate Voltage Drain Current) TJ=85°C --- --- 30 μA
VGS(th) (Gate Threshold Voltage) VGS=VDS , IDS=250μA 1.2 2.0 2.5 V
IGSS (Gate Leakage Current) VGS=±20V , VDS=0V --- --- ±100 nA
RDS(ON) (Drain-Source On-state Resistance) VGS=10V , ID=2A --- 72 100 mΩ
RDS(ON) (Drain-Source On-state Resistance) VGS=4.5V , ID=1A --- 88 110 mΩ
VSD (Diode Forward Voltage) ISD=1A , VGS=0V --- 0.8 1.3 V
trr (Reverse Recovery Time) IDS=60A , diSD/dt=100A/μs --- 50 --- ns
Qrr (Reverse Recovery Charge) --- 70 --- nC
Rg (Gate Resistance) VGS=0V , VDS=0V , ƒ=1.0MHz --- 3.0 --- Ω
Ciss (Input Capacitance) VGS=0V , VDS=20V , Frequency=1.0MHz --- 1215 --- pF
Coss (Output Capacitance) --- 56 --- pF
Crss (Reverse Transfer Capacitance) --- 45 --- pF
td(on) (Turn-on Delay Time) VDD=30V , RL=30Ω , IDS=5A , VGEN=10V , RG=1.8Ω --- 3.9 --- ns
tr (Turn-on Rise Time) --- 26 --- ns
td(off) (Turn-off Delay Time) --- 17 --- ns
tf (Turn-off Fall Time) --- 9 --- ns
Qg (Total Gate Charge) VDS=50V , VGS=10V , IDS=6A --- 12 --- nC
Qgs (Gate-Source Charge) --- 3 --- nC
Qgd (Gate-Drain Charge) --- 2 --- nC

2510131755_Winsok-Semicon-WSR20N10_C52034126.pdf
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