Silicon Carbide Half Bridge Module Wolfspeed CAB008A12GM3 Featuring Fail Safe Normally Off Operation
Key Attributes
Model Number:
CAB008A12GM3
Product Custom Attributes
Mfr. Part #:
CAB008A12GM3
Product Description
Product Overview
The Wolfspeed CAB008A12GM3/CAB008A12GM3T is a 1200 V, 8 m Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero turn-off tail current from the MOSFET and a normally-off, fail-safe device operation. The module utilizes an Aluminum Nitride Ceramic Substrate and is available with or without pre-applied thermal interface material. Its system benefits include enabling compact, lightweight designs, increased system efficiency due to low switching and conduction losses of SiC, and reduced thermal requirements and system cost. Key applications include DC-DC converters, EV chargers, high-efficiency converters/inverters, renewable energy systems, and smart-grid/grid-tied distributed generation.
Product Attributes
- Brand: Wolfspeed
- Trademarks: Wolfspeed, Wolfstreak logo
- Material: Silicon Carbide, Aluminum Nitride Ceramic Substrate
- Certifications: RoHS Compliant, REACh Compliant
- Optional Feature: Pre-Applied Thermal Interface Material
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions / Notes |
|---|---|---|---|---|---|---|
| Maximum Parameters (Verified by Design) | ||||||
| Drain-Source Voltage | VDS | 1200 | V | |||
| Gate-Source Voltage, Maximum Value | VGS max | -8 | +19 | V | Transient, < 100 ns | |
| Gate-Source Voltage, Recommended | VGS op | -4 | +15 | V | Static DC | |
| DC Continuous Drain Current (TVJ 150 C) | ID | 181 | A | VGS = 15 V, THS = 75 C, TVJ 150 C | ||
| DC Continuous Drain Current (TVJ 175 C) | ID | 196 | A | VGS = 15 V, THS = 75 C, TVJ 175 C | ||
| DC Source-Drain Current (Body Diode) | ISD BD | 125 | A | VGS = -4 V, THS = 75 C, TVJ 175 C | ||
| Pulsed Drain Current | ID (pulsed) | 392 | A | tPmax limited by TVJmax, VGS = 15 V, THS = 75 C | ||
| Virtual Junction Temperature | TVJ op | -40 | 150 | 175 | C | Operation / Intermittent with Reduced Life |
| MOSFET Characteristics (Per Position) (TVJ = 25 C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, TVJ = -40 C | ||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, ID = 46 mA |
| Zero Gate Voltage Drain Current | IDSS | 5 | 80 | A | VGS = 0 V, VDS = 1200 V | |
| Gate-Source Leakage Current | IGSS | 0.05 | 1.5 | A | VGS = 15 V, VDS = 0 V | |
| Drain-Source On-State Resistance | RDS(on) | 8.0 | 10.4 | m | VGS = 15 V, ID = 150 A | |
| Drain-Source On-State Resistance (at 150C) | RDS(on) | 12.8 | m | VGS = 15 V, ID = 150 A, TVJ = 150 C | ||
| Drain-Source On-State Resistance (at 175C) | RDS(on) | 14.4 | m | VGS = 15 V, ID = 150 A, TVJ = 175 C | ||
| Transconductance | gfs | 107 | S | VDS = 20 V, ID = 150 A | ||
| Turn-On Switching Energy (TVJ = 25 C) | EOn | 2.98 | mJ | VDD = 600 V, ID = 150 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 1.5 , L = 40 H | ||
| Turn-Off Switching Energy (TVJ = 25 C) | EOff | 0.26 | mJ | VDD = 600 V, ID = 150 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 1.5 , L = 40 H | ||
| Internal Gate Resistance | RG(int) | 1.68 | f = 100 kHz, VAC = 25 mV | |||
| Input Capacitance | Ciss | 13.6 | nF | VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz | ||
| Output Capacitance | Coss | 0.56 | nF | |||
| Reverse Transfer Capacitance | Crss | 43 | pF | |||
| Gate to Source Charge | QGS | 160 | nC | VDS = 800 V, VGS = -4 V/15 V, ID = 150 A, Per IEC60747-8-4 pg 21 | ||
| Gate to Drain Charge | QGD | 136 | nC | |||
| Total Gate Charge | QG | 472 | nC | |||
| FET Thermal Resistance, Junction to Heatsink | Rth JHS | 0.177 | C/W | Measured with Pre-Applied TIM | ||
| Diode Characteristics (Per Position) (TVJ = 25 C unless otherwise specified) | ||||||
| Body Diode Forward Voltage | VSD | 5.3 | V | VGS = -4 V, ISD = 150 A | ||
| Reverse Recovery Time | tRR | 28 | ns | VGS = -4 V, ISD = 150 A, VR = 600 V, di/dt = 17.5 A/ns, TVJ = 150 C | ||
| Reverse Recovery Charge | QRR | 2.8 | C | |||
| Peak Reverse Recovery Current | IRRM | 200 | A | |||
| Reverse Recovery Energy (TVJ = 25 C) | ERR | 0.24 | mJ | VDD = 600 V, ID = 150 A, VGS = -4 V/15 V, RG(ON) = 1.5 , L = 40 H | ||
| Module Physical Characteristics | ||||||
| Package Resistance, M1 (High-Side) | RHS | 1.43 | m | TC = 125C, ID = 200 A | ||
| Package Resistance, M2 (Low-Side) | RLS | 1.30 | m | TC = 125C, ID = 200 A | ||
| Stray Inductance | LStray | 7.4 | nH | Between DC- and DC+, f = 10 MHz | ||
| Case Temperature | TC | -40 | 125 | C | ||
| Mounting Torque | MS | 2.0 | 2.3 | N-m | M4 bolts | |
| Weight | W | 39 | g | |||
| Case Isolation Voltage | Visol | 3 | kV AC | 50 Hz, 1 minute | ||
| Comparative Tracking Index | CTI | 200 | ||||
| Clearance Distance (Terminal to Terminal) | 5.0 | mm | ||||
| Clearance Distance (Terminal to Heatsink) | 10.0 | mm | ||||
| Creepage Distance (Terminal to Terminal) | 6.3 | mm | ||||
| Creepage Distance (Terminal to Heatsink) | 11.5 | mm | ||||
| NTC Thermistor Characterization | ||||||
| Rated Resistance | RNTC | 5.0 | k | TNTC = 25C | ||
| Resistance Tolerance at 25 C | R/R | -5 | 5 | % | ||
| Beta Value (T2 = 50 C) | 25/50 | 3380 | K | |||
| Beta Value (T2 = 80 C) | 25/80 | 3468 | K | |||
| Beta Value (T2 = 100 C) | 25/100 | 3523 | K | |||
| Power Dissipation | PMax | 10 | mW | TNTC = 25C | ||
| Product Ordering Code | ||||||
| Part Number | Description | |||||
| CAB008A12GM3 | Without Pre-Applied Phase Change Thermal Interface Material | |||||
| CAB008A12GM3T | With Pre-Applied Phase Change Thermal Interface Material | |||||
2411051545_Wolfspeed-CAB008A12GM3_C20545562.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
