Durable WEIDA BTB26-800CW Triac 25A 800V RMS On State Current with Superior Shock Loading Resistance

Key Attributes
Model Number: BTB26-800CW
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
35mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
25A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
250A@50Hz
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTB26-800CW
Package:
TO-220B
Product Description

Jiangsu Weida Semiconductor Co., Ltd. BTA26/BTB26 Series 25A Triacs

The BTA26/BTB26 series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high current shock loading with excellent resistance to electromagnetic interference and high dv/dt rates. They offer superior commutation performance, making them particularly suitable for inductive loads. The BTA26 series provides a rated insulation voltage of 2500 VRMS, complying with UL standards.

Product Attributes

  • Brand: Jiangsu Weida Semiconductor Co., Ltd.
  • Series: BTA26/BTB26
  • Certifications: UL (File ref: E516503)

Technical Specifications

ParameterSymbolValueUnitNotes
RMS On-State CurrentIT(RMS)25A
Repetitive Peak Off-State VoltageVDRM600/800/1200/1600V
Repetitive Peak Reverse VoltageVRRM600/800/1200V
On-State Voltage (Max)VTM1.5VITM=35A, tp=380s, Tj=25
Non-Repetitive Surge Peak On-State CurrentITSM250AFull cycle, F=50Hz
I2t Value for FusingI2t340A2stp=10ms
Critical Rate of Rise of On-State CurrentdI/dt50A/sIG=2IGT
Peak Gate CurrentIGM4A
Average Gate Power DissipationPG(AV)1W
Peak Gate PowerPGM10W
Storage Junction Temperature RangeTstg-40~150
Operating Junction Temperature RangeTj-40~125
Off-State Leakage CurrentIDRM/IRRM10 (Tj=25) / 3 (Tj=125)AVDRM=VRRM
Gate Trigger Current (Max)IGT25 to 70mASee Electrical Characteristics for Quadrant details
Gate Trigger Voltage (Max)VGT1.3 to 1.5V
Holding Current (Max)IH60 to 100mASee Electrical Characteristics for Quadrant details
Latching Current (Max)IL70 to 100mASee Electrical Characteristics for Quadrant details
Critical Rate of Rise of Off-State VoltagedV/dt200 to 1500V/sGate open, Tj=125
Junction to Case Thermal Resistance (AC)Rth(j-c)1.0 to 2.1/WPackage dependent

2410122026_WEIDA-BTB26-800CW_C22437004.pdf

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