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quality Power MOSFET TWGMC SI2302B designed for load switching in DC DC converters and portable electronic devices factory
quality Power MOSFET TWGMC SI2302B designed for load switching in DC DC converters and portable electronic devices factory

Power MOSFET TWGMC SI2302B designed for load switching in DC DC converters and portable electronic devices

Key Attributes
Model Number: SI2302B
Product Custom Attributes
Mfr. Part #:
SI2302B
Package:
SOT-23
Product Description

Product Overview

The SI2302B is a Trench FET Power MOSFET designed for load switching in portable devices, DC-DC converters, and other applications. It offers efficient power management with its robust design and reliable performance.

Product Attributes

  • Brand: GMC (implied by www.tw-gmc.com)
  • Package: SOT-23 Plastic-Encapsulate MOSFET
  • Origin: Taiwan (implied by tw-gmc.com)

Technical Specifications

ModelParameterValueUnitTest Conditions
SI2302BDrain-Source Breakdown Voltage (V(BR)DSS)20VVGS=0, ID=250A
Gate-Threshold Voltage (VGS(th))0.6 - 1.1VVDS= VGS, ID=250A
Collector Cut-off Current (IGSS)100nAVDS=0, VGS=10V
Collector Cut-off Current (IDSS)1AVDS=20V, VGS=0V
Drain-Source On-Resistance (RDS(on))45 - 55mVGS=4.5V, ID=2A
Drain-Source On-Resistance (RDS(on))60 - 80mVGS=2.5V, ID=1A
Forward Transconductance (gFS)10SVDS=5V, ID=2.3A
Diode Forward Voltage (VSD)1.2VIS=1A,VGS=0V
Total Gate Charge (Qg)5.0 - 10nCVDS=10V, VGS=4.5V, ID=2.3A
Gate-Source Charge (Qgs)0.65
Gate-Drain Charge (Qgd)1.5
Input Capacitance (Ciss)340pFVDS=10V, VGS=0V, f=1MHz
Output Capacitance (Coss)120pFVDS=10V, VGS=0V, f=1MHz
SI2302BReverse Transfer Capacitance (Crss)80pFVDS=10V, VGS=0V, f=1MHz
Turn-on Delay Time (td(on))12nSVDS=10V, RL=5.5, ID2.5A, VGEN=4.5V, Rg=6
SI2302BRise Time (tr)36nSVDS=10V, RL=5.5, ID2.5A, VGEN=4.5V, Rg=6
Turn-off Delay Time (td(off))34nSVDS=10V, RL=5.5, ID2.5A, VGEN=4.5V, Rg=6
SI2302BFall Time (tf)10nSVDS=10V, RL=5.5, ID2.5A, VGEN=4.5V, Rg=6
Absolute Maximum RatingsDrain-Source Voltage (VDS)20VTa=25
Gate-Source Voltage (VGS)10VTa=25
Continuous Drain Current (ID)2.3ATa=25
Continuous Source-Drain Current (IS)0.6ADiode Conduction, Ta=25
Power Dissipation (PD)400mWTa=25
Thermal Resistance (RJA)300/WJunction To Ambient (t5s)
Operation Junction and Storage Temperature Range (TJ, Tstg)-55+150

2510141655_TWGMC-SI2302B_C52117627.pdf

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