IGBT Module YANGJIE MG150HF12MRC2 with 1200V Collector Emitter Voltage and 210A DC Collector Current

Key Attributes
Model Number: MG150HF12MRC2
Product Custom Attributes
Pd - Power Dissipation:
880W
Td(off):
420ns
Td(on):
150ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.48nF
Input Capacitance(Cies):
8.8nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@6mA
Gate Charge(Qg):
700nC@15V
Reverse Recovery Time(trr):
350ns
Switching Energy(Eoff):
9mJ
Turn-On Energy (Eon):
22mJ
Mfr. Part #:
MG150HF12MRC2
Package:
Screw Terminals
Product Description

Product Overview

The MG150HF12MRC2 S-M242 is a high-performance IGBT module designed for industrial applications. It features short circuit rating, low stray inductance, low saturation voltage, and ultra-low loss, making it ideal for demanding power electronics systems. This module is RoHS compliant and lead-free.

Product Attributes

  • Brand: yangjie
  • Certifications: RoHS Compliant

Technical Specifications

SymbolDescriptionConditionsValuesUnits
Absolute Maximum Ratings
VCESCollector - Emitter Voltage1200V
VGESGate-Emitter Voltage±20V
ICDC Collector CurrentTC=25°C210A
TC=80°C150A
ICpulsPulsed Collector CurrentTC=25°C, tp=1ms420A
TC=80°C, tp=1ms300A
PtotPower Dissipation Per IGBT880W
TJJunction Temperature Range-40 to +150°C
TSTGStorage Temperature Range-40 to +125°C
VisoInsulation Test VoltageAC, t=1min3000V
Mounting TorquePower TerminalsScrew: M65±15%N*m
Mounting Screw:M65±15%N*m
Electrical Characteristics of IGBT
V(BR)CESCollector-Emitter Breakdown VoltageVGE = 0V, IC = 1mA1200V
ICESCollector Leakage CurrentVCE=1200V,VGE=0V,TJ=25°C0.5mA
VCE=1200V, VGE=0V, TJ=125°C2mA
IGESGate Leakage CurrentVCE=0V, VGE=±20V-200 to 200nA
VGE(th)Gate - Emitter Threshold VoltageVCE=VGE, IC=6mA5.06.17V
VCE(sat)Collector Emitter Saturation VoltageIC=150A, VGE=15V, TJ=25°C2.02.3V
IC=150A VGE=15V, TJ=125°C2.32.6V
CiesInput CapacitanceVCE=25V, VGE=0V, f =1MHz8.8nF
CresReverse Transfer Capacitance0.48nF
Switching Characteristics (IGBT)
td(on)Turn-on Delay TimeVCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load150ns
VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load170ns
trRise TimeVCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load70ns
VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load80ns
td(off)Turn-off Delay TimeVCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load420ns
VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load470ns
TfFall TimeVCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load50ns
VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load60ns
EonTurn-on Switching LossVCC=600V, RG =15Ω IC=150A TJ=25°C22mJ
TJ=125°C24mJ
EoffTurn-off Switching LossVCC=600V, RG =15Ω IC=150A TJ=25°C9mJ
TJ=125°C9.6mJ
QgeGate ChargeVCC=600V,IC=150A,VGE=±15V700nC
Electrical Characteristics of FWD
VFMForward VoltageIF150A, VGE = 0V TJ = 252.02.48V
TJ = 1251.72.20V
trrReverse Recovery TimeIF=150A , VR=600V, diF/dt=-3000A/μs, TVj =125°C,350ns
IRRMMax. Reverse Recovery Current160A
ErecReverse Recovery Energy11.5mJ
Thermal Resistance Characteristics
RθJCJunction-To-Case (IGBT Part, Per Leg)0.17°C/W
RθJCJunction-To-Case (Diode Part, Per Leg)0.3°C/W
Application Scenarios
Circuit ApplicationsIndustrial Inverters, Servo Applications, SMPS UPS, Induction Heating

2410121236_YANGJIE-MG150HF12MRC2_C781188.pdf

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