IGBT Module YANGJIE MG150HF12MRC2 with 1200V Collector Emitter Voltage and 210A DC Collector Current
Product Overview
The MG150HF12MRC2 S-M242 is a high-performance IGBT module designed for industrial applications. It features short circuit rating, low stray inductance, low saturation voltage, and ultra-low loss, making it ideal for demanding power electronics systems. This module is RoHS compliant and lead-free.
Product Attributes
- Brand: yangjie
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Description | Conditions | Values | Units | ||
| Absolute Maximum Ratings | ||||||
| VCES | Collector - Emitter Voltage | 1200 | V | |||
| VGES | Gate-Emitter Voltage | ±20 | V | |||
| IC | DC Collector Current | TC=25°C | 210 | A | ||
| TC=80°C | 150 | A | ||||
| ICpuls | Pulsed Collector Current | TC=25°C, tp=1ms | 420 | A | ||
| TC=80°C, tp=1ms | 300 | A | ||||
| Ptot | Power Dissipation Per IGBT | 880 | W | |||
| TJ | Junction Temperature Range | -40 to +150 | °C | |||
| TSTG | Storage Temperature Range | -40 to +125 | °C | |||
| Viso | Insulation Test Voltage | AC, t=1min | 3000 | V | ||
| Mounting Torque | Power Terminals | Screw: M6 | 5±15% | N*m | ||
| Mounting Screw:M6 | 5±15% | N*m | ||||
| Electrical Characteristics of IGBT | ||||||
| V(BR)CES | Collector-Emitter Breakdown Voltage | VGE = 0V, IC = 1mA | 1200 | V | ||
| ICES | Collector Leakage Current | VCE=1200V,VGE=0V,TJ=25°C | 0.5 | mA | ||
| VCE=1200V, VGE=0V, TJ=125°C | 2 | mA | ||||
| IGES | Gate Leakage Current | VCE=0V, VGE=±20V | -200 to 200 | nA | ||
| VGE(th) | Gate - Emitter Threshold Voltage | VCE=VGE, IC=6mA | 5.0 | 6.1 | 7 | V |
| VCE(sat) | Collector Emitter Saturation Voltage | IC=150A, VGE=15V, TJ=25°C | 2.0 | 2.3 | V | |
| IC=150A VGE=15V, TJ=125°C | 2.3 | 2.6 | V | |||
| Cies | Input Capacitance | VCE=25V, VGE=0V, f =1MHz | 8.8 | nF | ||
| Cres | Reverse Transfer Capacitance | 0.48 | nF | |||
| Switching Characteristics (IGBT) | ||||||
| td(on) | Turn-on Delay Time | VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load | 150 | ns | ||
| VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load | 170 | ns | ||||
| tr | Rise Time | VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load | 70 | ns | ||
| VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load | 80 | ns | ||||
| td(off) | Turn-off Delay Time | VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load | 420 | ns | ||
| VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load | 470 | ns | ||||
| Tf | Fall Time | VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=25°C Inductive Load | 50 | ns | ||
| VCC=600V, IC=150A RG =15Ω,VGE=±15V TJ=125°C Inductive Load | 60 | ns | ||||
| Eon | Turn-on Switching Loss | VCC=600V, RG =15Ω IC=150A TJ=25°C | 22 | mJ | ||
| TJ=125°C | 24 | mJ | ||||
| Eoff | Turn-off Switching Loss | VCC=600V, RG =15Ω IC=150A TJ=25°C | 9 | mJ | ||
| TJ=125°C | 9.6 | mJ | ||||
| Qge | Gate Charge | VCC=600V,IC=150A,VGE=±15V | 700 | nC | ||
| Electrical Characteristics of FWD | ||||||
| VFM | Forward Voltage | IF150A, VGE = 0V TJ = 25 | 2.0 | 2.48 | V | |
| TJ = 125 | 1.7 | 2.20 | V | |||
| trr | Reverse Recovery Time | IF=150A , VR=600V, diF/dt=-3000A/μs, TVj =125°C, | 350 | ns | ||
| IRRM | Max. Reverse Recovery Current | 160 | A | |||
| Erec | Reverse Recovery Energy | 11.5 | mJ | |||
| Thermal Resistance Characteristics | ||||||
| RθJC | Junction-To-Case (IGBT Part, Per Leg) | 0.17 | °C/W | |||
| RθJC | Junction-To-Case (Diode Part, Per Leg) | 0.3 | °C/W | |||
| Application Scenarios | ||||||
| Circuit Applications | Industrial Inverters, Servo Applications, SMPS UPS, Induction Heating | |||||
2410121236_YANGJIE-MG150HF12MRC2_C781188.pdf
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