Power Switching MOSFET WPMtek WTM11N65AD 650V N Channel with 100 Percent Avalanche Tested and Low RDS
Key Attributes
Model Number:
WTM11N65AD
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
380mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
2.3pF
Number:
1 N-channel
Pd - Power Dissipation:
78W
Output Capacitance(Coss):
40pF
Input Capacitance(Ciss):
990pF
Gate Charge(Qg):
22.6nC@10V
Mfr. Part #:
WTM11N65AD
Package:
TO-252
Product Description
Product Overview
The WTM11N65AF/AD is a 650V N-Channel Super-Junction MOSFET designed for high-efficiency power switching applications. It offers very low FOM (RDS(on) x Qg), extremely low switching loss, and excellent stability and uniformity. This MOSFET is 100% avalanche tested and features a built-in ESD diode, making it suitable for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), TV power, and LED Lighting Power.
Product Attributes
- Brand: WPMtek
- Product Code: WTM11N65AF/AD
- Package Types: TO-220F, TO-252
- Certifications: 100% Avalanche Tested
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit | TO-220F | TO-252 |
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage (VDSS) | 650 | V | ✔ | ✔ | |||
| Gate-Source Voltage (VGS) | 20 | V | ✔ | ✔ | |||
| Drain Current - Continuous (TC = 25) | 11 | A | ✔ | ✔ | |||
| Drain Current - Continuous (TC = 100) | 6.6 | A | ✔ | ✔ | |||
| Drain Current - Pulsed (IDM) | 37 | A | ✔ | ✔ | |||
| Single Pulsed Avalanche Energy (EAS) | 140 | mJ | ✔ | ✔ | |||
| Avalanche Current (IAR) | 1.8 | A | ✔ | ✔ | |||
| MOSFET dv/dt ruggedness, VDS=0520V | 50 | V/ns | ✔ | ✔ | |||
| Reverse diode dv/dt, VDS=0520V, IDSID | 15 | V/ns | ✔ | ✔ | |||
| Power Dissipation (TC = 25) | TO-252 | 87 | W | ✔ | |||
| Power Dissipation (TC = 25) | TO-220F | 31 | W | ✔ | |||
| Gate source ESD(HBM-C=100pF, R=1.5K) (VESD(G-S)) | 2500 | V | ✔ | ✔ | |||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | +150 | ✔ | ✔ | |||
| Thermal Resistance Characteristics | |||||||
| Thermal Resistance, Junction-to-Case, Max. (RJC) | 1.6 | /W | ✔ | ✔ | |||
| Thermal Resistance, Junction-to-Ambient , Max. (RJA) | 62.5 | /W | ✔ | ✔ | |||
| Electrical Characteristics (TJ=25 C unless otherwise specified) | |||||||
| Gate Threshold Voltage (VGS) | VDS = VGS, ID = 370 A | 2.0 | 4.0 | V | ✔ | ✔ | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS = 10 V, ID = 3.4 A | 0.33 | 0.38 | ✔ | ✔ | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 1mA | 650 | V | ✔ | ✔ | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS = 650 V, VGS = 0 | 1 | A | ✔ | ✔ | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS = 650 V, TC = 150 | 100 | A | ✔ | ✔ | ||
| Gate-Body Leakage Current (IGSS) | VGS = 20 V, VDS = 0 V | 1 | A | ✔ | ✔ | ||
| Input Capacitance (Ciss) | VDS = 100 V, VGS = 0 V, f = 1.0 MHz | 990 | pF | ✔ | ✔ | ||
| Output Capacitance (Coss) | VDS = 100 V, VGS = 0 V, f = 1.0 MHz | 40 | pF | ✔ | ✔ | ||
| Reverse Transfer Capacitance (Crss) | VDS = 100 V, VGS = 0 V, f = 1.0 MHz | 2.3 | pF | ✔ | ✔ | ||
| Turn-On Time (td(on)) | VDS = 325 V, ID = 4.8 A, RG = 25 (Note 3,4) | 30 | ns | ✔ | ✔ | ||
| Turn-On Rise Time (tr) | VDS = 325 V, ID = 4.8 A, RG = 25 (Note 3,4) | 23 | ns | ✔ | ✔ | ||
| Turn-Off Delay Time (td(off)) | VDS = 325 V, ID = 4.8 A, RG = 25 (Note 3,4) | 190 | ns | ✔ | ✔ | ||
| Turn-Off Fall Time (tf) | VDS = 325 V, ID = 4.8 A, RG = 25 (Note 3,4) | 20 | ns | ✔ | ✔ | ||
| Total Gate Charge (Qg) | VDS = 520 V, ID = 4.8 A, VGS = 10 V (Note 3,4) | 22.6 | nC | ✔ | ✔ | ||
| Gate-Source Charge (Qgs) | VDS = 520 V, ID = 4.8 A, VGS = 10 V (Note 3,4) | 4.6 | nC | ✔ | ✔ | ||
| Gate-Drain Charge (Qgd) | VDS = 520 V, ID = 4.8 A, VGS = 10 V (Note 3,4) | 6.4 | nC | ✔ | ✔ | ||
| Drain-Source Diode Characteristics and Maximum Ratings | |||||||
| Maximum Continuous Drain-Source Diode Forward Current (IS) | 11 | A | ✔ | ✔ | |||
| Maximum Pulsed Drain-Source Diode Forward Current (ISM) | 29 | A | ✔ | ✔ | |||
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0 V, IS = 4.8 A | 1.3 | V | ✔ | ✔ | ||
| Reverse Recovery Time (trr) | VGS = 0 V, IS = 4.8 A, diF/dt = 100 A/s | 240 | ns | ✔ | ✔ | ||
| Reverse Recovery Charge (Qrr) | VGS = 0 V, IS = 4.8 A, diF/dt = 100 A/s | 2.1 | C | ✔ | ✔ | ||
2511050953_WPMtek-WTM11N65AD_C46079379.pdf
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