Power MOSFET Winsok Semicon WSD70N06GDN33 with 100 percent EAS guaranteed and RoHS compliant design
Key Attributes
Model Number:
WSD70N06GDN33
Product Custom Attributes
Mfr. Part #:
WSD70N06GDN33
Package:
DFN-8L(3x3)
Product Description
Product Overview
The WSD70N06GDN33 is a high-performance N-Channel SGT MOSFET featuring extreme cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. This MOSFET is ideal for power management in industrial DC/DC converters and high-frequency switching applications.
Product Attributes
- Brand: Winsok
- Certifications: RoHS Compliant, Green Devices Available
- Testing: 100% UIS Tested, 100% EAS guaranteed
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | --- | --- | V |
| VGS=0V , ID=250A | 60 | --- | --- | V | ||
| VGS=0V , ID=250A | 60 | --- | --- | V | ||
| Static Drain-Source On-Resistance | RDS ON | VGS=10V , ID=20A | --- | 7.5 | 10 | m |
| VGS=10V , ID=20A, TJ=125C | --- | 15 | --- | m | ||
| VGS=4.5V , ID=15A | --- | 10 | 13 | V | ||
| Gate Threshold Voltage | VGS th | VGS=VDS , ID=250A | 1.2 | 1.5 | 2.5 | V |
| VGS=VDS , ID=250A | 1.2 | 1.5 | 2.5 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=60V , VGS=0V | --- | --- | 1.0 | A |
| VDS=60V , VGS=0V, TJ=55C | --- | --- | 5.0 | A | ||
| Gate-Source Leakage Current | IGSS | VDS=0V , VGS=20V | --- | --- | 100 | nA |
| Forward Transconductance | gfs | VDS=5V , ID=1A | --- | 50 | --- | S |
| Gate Resistance | RG | =1.0MHz | --- | --- | 5.0 | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=10A | --- | 17 | --- | nC |
| VDS=50V , VGS=10V , ID=10A | --- | 17 | --- | nC | ||
| VDS=50V , VGS=10V , ID=10A | --- | 17 | --- | nC | ||
| Gate-Source Charge | Qgs | --- | 3.5 | --- | ||
| Gate-Drain Charge | Qgd | --- | 3.3 | --- | ||
| Turn-On Delay Time | Td on | VDD=50V , VGS=10V , ID=20A RL=1 , RGEN=2 | --- | 18 | --- | ns |
| VDD=50V , VGS=10V , ID=20A RL=1 , RGEN=2 | --- | 18 | --- | ns | ||
| Rise Time | Tr | --- | 4.1 | --- | ||
| Turn-Off Delay Time | Td off | --- | 35 | --- | ||
| Fall Time | Tf | --- | 5.7 | --- | ||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , =1.0MHz | --- | 1150 | --- | pF |
| VDS=50V , VGS=0V , =1.0MHz | --- | 1150 | --- | pF | ||
| VDS=50V , VGS=0V , =1.0MHz | --- | 1150 | --- | pF | ||
| Output Capacitance | Coss | VDS=50V , VGS=0V , =1.0MHz | --- | 200 | --- | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V , VGS=0V , =1.0MHz | --- | 5.2 | --- | pF |
| Continuous Source Current | IS | --- | --- | 70 | A | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | --- | 0.7 | 1.2 | V |
| Reverse Recovery Time | trr | IF=10A , di/dt=500A/s | --- | 42 | --- | ns |
| Reverse Recovery Charge | Qrr | IF=10A , di/dt=500A/s | --- | 35 | --- | nC |
| Continuous Drain Current | ID | TC=25C | --- | --- | 70 | A |
| TC=100C | --- | --- | 35 | A | ||
| TC=25C | --- | --- | 70 | A | ||
| Pulse Drain Current | IDM | --- | --- | 100 | A | |
| Power Dissipation | PD | TC=25C | --- | --- | 65 | W |
| TC=25C | --- | --- | 65 | W | ||
| Single pulse Avalanche Current | IAS | --- | --- | 25 | A | |
| Single pulse Avalanche Energy | EAS | L=0.5mH | --- | --- | 30 | mJ |
| Storage Temperature Range | TSTG | -55 | --- | 150 | C | |
| Operating Junction Temperature Range | TJ | -55 | --- | 150 | C | |
| Thermal Resistance-Junction to Ambient | RJA | t10s | --- | --- | 30 | C/W |
| Steady State | --- | --- | 82 | C/W | ||
| Thermal Resistance-Junction to Case | RJC | --- | --- | 2.1 | C/W |
2510131755_Winsok-Semicon-WSD70N06GDN33_C52034112.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
