650 V 10 A Silicon Carbide Wolfspeed C6D10065G Schottky Diode for Solar Inverters Applications
Wolfspeed C6D10065G: 650 V, 10 A Silicon Carbide Schottky Diode
Product Overview
The Wolfspeed C6D10065G is a 650 V, 10 A Silicon Carbide (SiC) Schottky Barrier diode designed to enhance power electronics systems with improved efficiency, higher frequencies, and increased power densities. Leveraging the performance advantages of SiC technology, this diode offers a low forward voltage (VF) drop with a positive temperature coefficient, zero reverse recovery current, and temperature-independent switching behavior. Its ability to be easily paralleled without concern of thermal runaway, coupled with reduced cooling requirements, contributes to lower overall system costs. Ideal for demanding applications, it finds use in industrial power supplies, switch mode power supplies, server/telecom power supplies, power factor correction, solar inverters, and uninterruptible power supplies.
Product Attributes
- Brand: Wolfspeed
- Material: Silicon Carbide (SiC)
- Package Type: TO-263-2
- RoHS Compliance: Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | ||
| DC Blocking Voltage | VDC | 650 | V | ||
| Continuous Forward Current | IF | 36 | A | TJ = 25 C | Fig. 3 |
| 18 | A | TJ = 125 C | |||
| 10 | A | TJ = 155 C | |||
| Repetitive Peak Forward Surge Current | IFRM | 39 | A | Tc = 25 C, tp = 10 ms, Half Sine Wave | |
| 22 | A | Tc = 110 C, tp = 10 ms, Half Sine Wave | |||
| Non-Repetitive Peak Forward Surge Current | IFSM | 80 | A | Tc = 25 C, tp = 10 ms, Half Sine Wave | Fig. 8 |
| 68 | A | Tc = 110 C, tp = 10 ms, Half Sine Wave | |||
| Maximum Non-Repetitive Peak Forward Surge Current | IF, Max | 1020 | A | Tc = 25 C, tp = 10 s, Pulse | |
| 960 | A | Tc = 110 C, tp = 10 s, Pulse | |||
| Power Dissipation | Ptot | 108 | W | TJ = 25 C | Fig. 4 |
| 47 | W | TJ = 110 C | |||
| Forward Voltage | VF | 1.27 / 1.40 | V | IF = 10 A, TJ = 25 C | Fig. 1 |
| Forward Voltage | VF | 1.37 / 1.50 | V | IF = 10 A, TJ = 175 C | |
| Reverse Current | IR | 2 / 20 | A | VR = 650 V, TJ = 25 C | Fig. 2 |
| 12 / 200 | A | VR = 650 V, TJ = 175 C | |||
| Total Capacitive Charge | QC | 34 | nC | VR = 400 V, TJ = 25 C | Fig. 5 |
| Total Capacitance | C | 611 | pF | VR = 0 V, TJ = 25 C, f = 1 MHz | Fig. 6 |
| 67 | pF | VR = 200 V, TJ = 25 C, f = 1 MHz | |||
| 53 | pF | VR = 400 V, TJ = 25 C, f = 1 MHz | |||
| Capacitance Stored Energy | EC | 5.2 | J | VR = 400 V | Fig. 7 |
| Thermal Resistance, Junction to Case | R, JC | 1.38 | C / W | ||
| Operating Junction & Storage Temperature | TJ , Tstg | -55 to +175 | C | Fig. 9 |
ESD Classifications:
- Human Body Model (HBM): Class 3B ( 8000 V)
- Charge Device Model (CDM): Class C3 ( 1000 V)
Package Dimensions: TO-263-2
2411272306_Wolfspeed-C6D10065G_C7459965.pdf
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