Power MOSFET Silicon N Channel XCH 4N65M with TO 251 Package Offering Improved Switching Performance
Key Attributes
Model Number:
4N65M
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.5pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
53pF
Input Capacitance(Ciss):
610pF@25V
Pd - Power Dissipation:
75W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
4N65M
Package:
TO-252
Product Description
Product Overview
This Silicon N-Channel Enhanced VDMOSFET is manufactured using self-aligned planar technology, leading to reduced conduction losses, improved switching performance, and enhanced avalanche energy. It is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. The device comes in a TO-251 package and complies with RoHS standards.
Product Attributes
- Brand: XCH4N65M
- Material: Silicon N-Channel Power MOSFET
- Package: TO-251
- Certifications: RoHS
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units | Min. | Typ. | Max. |
| OFF Characteristics | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 650 | V | |||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | 0.67 | V/ | ||||
| Drain to Source Leakage Current | VDS=650V,VGS=0V,Ta=25 | 1 | A | ||||
| Drain to Source Leakage Current | VDS=520V, VGS=0V,Ta=125 | 100 | A | ||||
| Gate to Source Forward Leakage | VGS=+30V | 100 | nA | ||||
| Gate to Source Reverse Leakage | VGS=-30V | -100 | nA | ||||
| VDSS | Drain-to-Source Voltage | 650 | V | ||||
| ON Characteristics | Drain-to-Source On-Resistance | VGS=10V,ID=2A | 1.95 | ||||
| Gate Threshold Voltage | VDS=VGS,ID=250A | 2.0 | 3.0 | 4.0 | V | ||
| RDS(ON)typ | 2 | ||||||
| Dynamic Characteristics | Forward Transconductance | VDS=15V,ID=2A | 3.5 | S | |||
| Input Capacitance | VGS=0V,VDS=25V f=1.0MHz | 610 | pF | ||||
| Output Capacitance | 53 | pF | |||||
| Reverse Transfer Capacitance | 3.5 | pF | |||||
| Resistive Switching Characteristics | Turn-on Delay Time | ID=4A,VDD=325V RG=10 | 15 | ns | |||
| Rise Time | 30 | ns | |||||
| Turn-Off Delay Time | 50 | ns | |||||
| Fall Time | 40 | ns | |||||
| Total Gate Charge | ID=4A,VDD=325V VGS=10V | 10 | nC | ||||
| Source-Drain Diode Characteristics | Continuous Source Current (Body Diode) | 4 | A | ||||
| Diode Forward Voltage | IS=4.0A,VGS=0V | 1.5 | V | ||||
| Reverse Recovery Time | IS=4.0A,Tj=25C dIF/dt=100A/us, VGS=0V | 256 | ns | ||||
| Thermal Characteristics | Junction-to-Case | 1.67 | /W | ||||
| Junction-to-Ambient | 100 | /W | |||||
| Absolute Ratings | Continuous Drain Current | TC = 25C | 4 | A | |||
| Continuous Drain Current | TC = 100 C | 2.5 | A | ||||
| Pulsed Drain Current | 16 | A | |||||
| Gate-to-Source Voltage | 30 | V | |||||
| Single Pulse Avalanche Energy | 200 | mJ | |||||
| Peak Diode Recovery dv/dt | 5.0 | V/ns | |||||
| Power Dissipation | TC=25 | 75 | W | ||||
| Derating Factor above 25C | 0.6 | W/ | |||||
| Operating Junction and Storage Temperature Range | 55 to 150 | 150 | |||||
| Maximum Temperature for Soldering | 300 |
2305091658_XCH-4N65M_C5455843.pdf
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