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quality Half Bridge Module with Aluminum Nitride Insulator Wolfspeed CAS530M12BM3 Silicon Carbide Technology factory
quality Half Bridge Module with Aluminum Nitride Insulator Wolfspeed CAS530M12BM3 Silicon Carbide Technology factory
quality Half Bridge Module with Aluminum Nitride Insulator Wolfspeed CAS530M12BM3 Silicon Carbide Technology factory
quality Half Bridge Module with Aluminum Nitride Insulator Wolfspeed CAS530M12BM3 Silicon Carbide Technology factory

Half Bridge Module with Aluminum Nitride Insulator Wolfspeed CAS530M12BM3 Silicon Carbide Technology

Key Attributes
Model Number: CAS530M12BM3
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
645A
Operating Temperature -:
-40℃~+150℃
RDS(on):
3.5mΩ@15V
Gate Threshold Voltage (Vgs(th)):
3.6V@127mA
Reverse Transfer Capacitance (Crss@Vds):
48.5pF
Output Capacitance(Coss):
2.6nF
Pd - Power Dissipation:
2kW
Input Capacitance(Ciss):
38.9nF
Mfr. Part #:
CAS530M12BM3
Product Description

Wolfspeed CAS530M12BM3 Silicon Carbide Half-Bridge Module

Product Overview

The Wolfspeed CAS530M12BM3 is a 1200 V, 530 A Silicon Carbide (SiC) Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from its diodes and zero turn-off tail current from its MOSFETs, enabling normally-off, fail-safe device operation. The module utilizes a copper baseplate and aluminum nitride insulator for efficient thermal management. Its industry-standard 62 mm footprint allows for system retrofitting and increased system efficiency due to the inherent low switching and conduction losses of SiC technology. Key applications include induction heating, motor drives, renewables, railway auxiliary and traction systems, EV fast charging, and UPS and SMPS.

Product Attributes

  • Brand: Wolfspeed
  • Technology: Silicon Carbide (SiC)
  • Device Type: Half-Bridge Module
  • Footprint: Industry Standard 62 mm
  • Baseplate Material: Copper
  • Insulator Material: Aluminum Nitride
  • Certifications: RoHS Compliant

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions Note
Drain-Source Voltage VDS 1200 V
Drain-Source DC Current ID 486 A VGS = 15 V, TC = 90 C, TVJ 175 C 2, 3
DC Source-Drain Current (Schottky Diode) ISD(SD) 632 A VGS = -4 V, TC = 25 C, TVJ 175 C
Pulsed Drain-Source Current IDM 1060 A VGS = 15 V, TC = 25 C, tPmax limited by TVJmax
Power Dissipation PD 2000 W TC = 25 C, TVJ 175 C 4
Virtual Junction Temperature (Operation) TVJ(op) -40 150 C Operation
Virtual Junction Temperature (Intermittent) TVJ 175 C Intermittent with Reduced Life
Drain-Source Breakdown Voltage V(BR)DSS 1200 V VGS = 0 V, TVJ = -40 C
Gate Threshold Voltage VGS(th) 1.8 2.5 3.6 V VDS = VGS, ID = 127 mA
Zero Gate Voltage Drain Current IDSS 12.8 1692 A VGS = 0 V, VDS = 1200 V
Gate-Source Leakage Current IGSS 60 600 nA VGS = 15 V, VDS = 0 V
Drain-Source On-State Resistance RDS(on) 2.7 3.5 m VGS = 15 V, ID = 530 A Fig. 2, 3
Transconductance gfs 449 S VDS = 20 V, ID = 530 A Fig. 4
Turn-On Switching Energy EON 6.6 mJ TVJ = 25 C, VDD = 600 V, ID = 530 A, VGS = -4 V/15 V, RG(OFF) = 0.5 , RG(ON) = 0.5 , L = 13.6 H Fig. 11, 13
Turn-Off Switching Energy EOFF 8.9 mJ TVJ = 25 C, VDD = 600 V, ID = 530 A, VGS = -4 V/15 V, RG(OFF) = 0.5 , RG(ON) = 0.5 , L = 13.6 H Fig. 11, 13
Input Capacitance Ciss 38.9 nF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 9
Output Capacitance Coss 2.6 nF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 9
Reverse Transfer Capacitance Crss 48.5 pF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 9
Diode Forward Voltage VF 2.0 V VGS = -4 V, IF = 530 A, TVJ = 25 C Fig. 7
Reverse Recovery Time tRR 25.5 ns VGS = -4 V, ISD = 530 A, VR = 800 V, di/dt = 18.0 A/ns, TVJ = 150 C Fig. 32
Reverse Recovery Charge QRR 4.8 C VGS = -4 V, ISD = 530 A, VR = 800 V, di/dt = 18.0 A/ns, TVJ = 150 C Fig. 32
Reverse Recovery Energy ERR 1.9 mJ VDS = 600 V, ID = 530 A, VGS = -4 V/15 V, RG(ext) = 0.5 , L = 13.6 H, TVJ = 25 C Note 5, Fig. 14
Diode Thermal Resistance, JCT. to Case Rth JC 0.078 C/W Fig. 18
MOSFET Thermal Resistance, Junction to Case Rth JC 0.075 C/W Fig. 17
Package Resistance, M1 (High-Side) R3-1 0.90 m TC = 25 C, ISD = 530 A Note 6
Package Resistance, M2 (Low-Side) R1-2 0.97 m TC = 25 C, ISD = 530 A Note 6
Stray Inductance LStray 11.1 nH Between DC- and DC+, f = 10 MHz
Case Temperature TC -40 125 C
Mounting Torque MS 4 5 5.5 N-m Baseplate, M6-1.0 Bolts
Case Isolation Voltage Visol 5 kV AC, 50 Hz, 1 minute
Clearance Distance (Terminal to Terminal) 9 mm
Clearance Distance (Terminal to Baseplate) 30 mm
Creepage Distance (Terminal to Terminal) 30 mm
Creepage Distance (Terminal to Baseplate) 40 mm
Weight W 300 g

2410301853_Wolfspeed-CAS530M12BM3_C20545174.pdf

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