N Channel Trench Power MOSFET XIN FEI HONG FH30150D 30V 150A Continuous Drain Current TO 252 Package
Key Attributes
Model Number:
FH30150D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.6mΩ@4.5V,25A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
420pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.8nF@25V
Pd - Power Dissipation:
130W
Gate Charge(Qg):
40nC
Mfr. Part #:
FH30150D
Package:
TO-252
Product Description
Product Overview
The FH30150D is an N-Channel Trench Power MOSFET from SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD. It features advanced trench technology, providing excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, offering high performance with a 30V drain-source voltage and 150A continuous drain current.
Product Attributes
- Brand: XIN FEI HONG ELECTRONICS CO.,LTD
- Model: FH30150D
- Origin: SHEN ZHEN
- Type: N-Channel Trench Power MOSFET
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Value | Units | Test Condition |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 30 | V | |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Continuous Drain Current | ID | 150 | A | TC = 25 |
| Continuous Drain Current | ID | 105 | A | TC = 100 |
| Pulsed Drain Current | IDM | 600 | A | note1 |
| Single Pulsed Avalanche Energy | EAS | 180 | mJ | note2 |
| Power Dissipation | PD | 130 | W | TC = 25 |
| Thermal Resistance, Junction to Case | RJC | 1.15 | /W | |
| Thermal Resistance, Junction to Ambient | RJA | 62 | /W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +175 | ||
| Off Characteristic | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | GS=0V,ID=250 A |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS =30V, VGS = 0V, TJ=25 |
| Zero Gate Voltage Drain Current | IDSS | 10 | uA | VDS =24V, VGS = 0V, TJ=125 |
| Gate to Body Leakage Current | IGSS | ±100 | nA | VDS =0V,VGS = ±20V |
| On Characteristic | ||||
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.5 | V | VDS= VGS, ID=250 A |
| Static Drain-Source on-Resistance | RDS(on) | 1.9 | m | VGS =10V, ID =30A |
| Static Drain-Source on-Resistance | RDS(on) | 2.6 | m | VGS =4.5V, ID =25A |
| Forward Transconductance | gFS | 48 | S | VDS =5V, ID =15A |
| Dynamic Characteristic | ||||
| Input Capacitance | Ciss | 4800 | pF | VDS =25V, VGS =0V, f = 1.0MHz |
| Output Capacitance | Coss | 735 | pF | VDS =25V, VGS =0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 420 | pF | VDS =25V, VGS =0V, f = 1.0MHz |
| Total Gate Charge | Qg | 40 | nC | VDS =15V, ID =24A, VGS =4.5V |
| Gate-Source Charge | Qgs | 6 | nC | VDS =15V, ID =24A, VGS =4.5V |
| Gate-Drain(Miller) Charge | Qgd | 19 | nC | VDS =15V, ID =24A, VGS =4.5V |
| Switching Characteristic | ||||
| Turn-on Delay Time | td(on) | 20 | ns | VDS=15V, ID=1A, RGEN=1, VGS =10V |
| Turn-on Rise Time | tr | 32 | ns | VDS=15V, ID=1A, RGEN=1, VGS =10V |
| Turn-off Delay Time | td(off) | 75 | ns | VDS=15V, ID=1A, RGEN=1, VGS =10V |
| Turn-off Fall Time | tf | 28 | ns | VDS=15V, ID=1A, RGEN=1, VGS =10V |
| Drain-Source Diode Characteristic and Maximum Ratings | ||||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 150 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 600 | A | |
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS =30A |
| Body Diode Reverse Recovery Time | trr | 85 | ns | IS=1A,dI/dt=100A/s |
| Body Diode Reverse Recovery Charge | Qrr | 35 | nC | IS=1A,dI/dt=100A/s |
2201121400_XIN-FEI-HONG-FH30150D_C2929023.pdf
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