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quality N channel Enhancement Mode MOSFET XTX BRP100N245P6 with Low Gate Charge and 100V Drain Source Voltage factory
quality N channel Enhancement Mode MOSFET XTX BRP100N245P6 with Low Gate Charge and 100V Drain Source Voltage factory

N channel Enhancement Mode MOSFET XTX BRP100N245P6 with Low Gate Charge and 100V Drain Source Voltage

Key Attributes
Model Number: BRP100N245P6
Product Custom Attributes
Mfr. Part #:
BRP100N245P6
Package:
TOLL-8
Product Description

Product Overview

The BRP100N245P6 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It offers high performance with 100V drain-source voltage and 245A continuous drain current. Key advantages include ultra-low RDS(ON) of < 1.2m, low gate charge, and lead-free construction. This MOSFET is designed for demanding applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC converters and power management systems.

Product Attributes

  • Brand: XTX Technology Inc.
  • Product Code: BRP100N245P6
  • Origin: China (implied by company location and contact info)
  • Certifications: Lead Free

Technical Specifications

SymbolParameterConditionMinTypMaxUnit
Off Characteristics
V(BR)DSSDrain-Source Breakdown VoltageID = 250A, VGS = 0V100--V
IDSSZero Gate Voltage Drain CurrentVDS = 80V, VGS = 0V--1uA
IGSSGate-Body Leakage CurrentVDS = 0V, VGS = 20V--100nA
On Characteristics
VGS(TH)Gate Threshold VoltageVDS = VGS, ID = 250uA2.03.04.0V
RDS(ON)Static Drain-Source ON-ResistanceVGS = 10V, ID = 20A1.01.2-m
Dynamic Characteristics
CissInput CapacitanceVGS = 0V, VDS = 50V, f = 1MHz-1373114678pF
CossOutput CapacitanceVGS = 0V, VDS = 50V, f = 1MHz-77848209pF
CrssReverse Transfer CapacitanceVGS = 0V, VDS = 50V, f = 1MHz-593888pF
RgGate ResistanceVGS = 0V, VDS = 0V, f = 1MHz-4.3-
QgTotal Gate ChargeVDS = 50V, ID = 20A-218-nC
QgsGate Source ChargeVDS = 50V, ID = 20A-66-nC
QgdGate Drain("Miller") ChargeVDS = 50V, ID = 20A-57-nC
Switching Characteristics
td(on)Turn-On Delay TimeVGS = 10V, VDS = 50V, ID = 20A, RGEN = 1.6-43-ns
trTurn-On Rise TimeVGS = 10V, VDS = 50V, ID = 20A, RGEN = 1.6-71-ns
td(off)Turn-Off Delay TimeVGS = 10V, VDS = 50V, ID = 20A, RGEN = 1.6-149-ns
tfTurn-Off Fall TimeVGS = 10V, VDS = 50V, ID = 20A, RGEN = 1.6-89-ns
Drain-Source Diode Characteristics
ISContinuous Source Current---245A
VSDForward on voltageVGS = 0V, IS = 1A--1.2V
TrrReverse Recovery TimeIF = 20A, di/dt = 100A/us-136-ns
QrrReverse Recovery ChargeIF = 20A, di/dt = 100A/us-380-nC
Absolute Maximum Ratings
VDSDrain-to-Source Voltage---100V
VGSGate-to-Source Voltage--20-V
IDContinuous Drain CurrentTC = 25C--245A
IDContinuous Drain CurrentTC = 100C--175A
IDMPulsed Drain Current(1)--980A
EASSingle Pulsed Avalanche Energy(2)--1488mJ
PDPower DissipationTC = 25C--465W
RJCThermal Resistance, Junction to Case--0.27-C/W
TJ, TSTGJunction & Storage Temperature Range--55-+150C

2509261615_XTX-BRP100N245P6_C51966735.pdf

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