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quality High Current Silicon Carbide Half Bridge Module Wolfspeed CAS350M12BM3 350 Amp 62 Millimeter Package factory
quality High Current Silicon Carbide Half Bridge Module Wolfspeed CAS350M12BM3 350 Amp 62 Millimeter Package factory
quality High Current Silicon Carbide Half Bridge Module Wolfspeed CAS350M12BM3 350 Amp 62 Millimeter Package factory
quality High Current Silicon Carbide Half Bridge Module Wolfspeed CAS350M12BM3 350 Amp 62 Millimeter Package factory

High Current Silicon Carbide Half Bridge Module Wolfspeed CAS350M12BM3 350 Amp 62 Millimeter Package

Key Attributes
Model Number: CAS350M12BM3
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
417A
RDS(on):
5.2mΩ@15V
Operating Temperature -:
-40℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.6V@85mA
Reverse Transfer Capacitance (Crss@Vds):
44.5pF
Output Capacitance(Coss):
1.8nF
Input Capacitance(Ciss):
25.7nF
Mfr. Part #:
CAS350M12BM3
Product Description

Product Overview

The CAS350M12BM3 is a 1200 V, 350 A Silicon Carbide (SiC) half-bridge module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from diodes and zero turn-off tail current from MOSFETs, offering normally-off, fail-safe device operation. The module utilizes a copper baseplate and aluminum nitride insulator for efficient thermal management. Its industry-standard 62mm footprint facilitates system retrofitting and enables increased system efficiency. Key applications include induction heating, motor drives, renewables, railway auxiliary & traction, EV fast charging, and UPS and SMPS.

Product Attributes

  • Brand: Wolfspeed
  • Technology: Silicon Carbide (SiC)
  • Package Footprint: 62mm
  • Operation: Normally-off, Fail-safe
  • Baseplate Material: Copper
  • Insulator Material: Aluminum Nitride

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Test Conditions Note
Drain-Source Voltage VDS 1200 V
Drain Current IDS 350 A VGS = 15 V, TC = 90 C, TVJ 175 C
Gate-Source Voltage, Maximum Value VGS max -8 +19 V Transient, <100 ns Fig. 33
Gate-Source Voltage, Recommended VGS op -4 +15 V
Continuous Drain Current ID 417 A VGS = 15 V, TC = 25 C, TVJ 175 C Fig. 21
DC Source-Drain Current (Diode) ISD 440 A VGS = - 4 V, TC = 25 C, TVJ 175 C
Pulsed Drain Current ID (pulsed) 700 A VGS = 15 V, TC = 25 C tPmax limited by TVJmax
Virtual Junction Temperature TVJ op -40 150 C Operation 175 Intermittent with Reduced Life
Drain-Source Breakdown Voltage V(BR)DSS 1200 V VGS = 0 V, TVJ = -40 C
Gate Threshold Voltage VGS(th) 1.8 2.5 3.6 V VDS = VGS, ID = 85 mA 2.0 VDS = VGS, ID = 85 mA, TVJ = 175 C
Zero Gate Voltage Drain Current IDSS 8.2 1128 A VGS = 0 V, VDS = 1200 V
Gate-Source Leakage Current IGSS 40 400 nA VGS = 15 V, VDS = 0 V
Drain-Source On-State Resistance RDS(on) 4.0 5.2 m VGS = 15 V, ID = 350 A Fig. 2, Fig. 3
6.5 m VGS = 15 V, ID = 350 A, TVJ = 150 C
Transconductance gfs 306 S VDS = 20 V, ID = 350 A Fig. 4
292 S VDS = 20 V, ID = 350 A, TVJ = 150 C
Turn-On Switching Energy EOn 5.0 mJ VDD = 600 V, ID = 350 A, VGS = -4 V/15 V, RG(OFF) = 0.5 , RG(ON) = 0.5 , L = 25 H TVJ = 25 C, Fig. 11, Fig. 13
4.5 mJ TVJ = 125 C
4.4 mJ TVJ = 150 C
Turn-Off Switching Energy EOff 4.8 mJ TVJ = 25 C Fig. 11, Fig. 13
4.8 mJ TVJ = 125 C
4.9 mJ TVJ = 150 C
Internal Gate Resistance RG(int) 2.53 f = 100 kHz, VAC = 25 mV
Input Capacitance Ciss 25.7 nF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 9
Output Capacitance Coss 1.8 nF
Reverse Transfer Capacitance Crss 44.5 pF
Gate to Source Charge QGS 268 nC VDS = 800 V, VGS = -4 V/15 V, ID = 350 A, Per IEC60747-8-4 pg 21
Gate to Drain Charge QGD 244 nC
Total Gate Charge QG 844 nC
FET Thermal Resistance, Junction to Case Rth JC 0.116 C/W Fig. 17
Diode Forward Voltage VF 2.0 V VGS = -4 V, IF = 350 A, TVJ = 25 C Fig. 7
2.5 V VGS = -4 V, IF = 350 A, TVJ = 150 C
Reverse Recovery Time trr 24.5 ns VGS = -4 V, ISD = 350 A, VR = 800 V di/dt = 13.0 A/ns, TVJ = 150 C Fig. 32
Reverse Recovery Charge Qrr 5.0 C
Peak Reverse Recovery Current Irrm 341 A
Reverse Recovery Energy Err 1.7 mJ VDS = 600 V, ID = 350 A, VGS = -4 V/15 V, RG(ext) = 0.5 , L = 25 H TVJ = 25 C, Fig. 14
2.0 mJ TVJ = 125 C Note: 1
2.0 mJ TVJ = 150 C
Diode Thermal Resistance, JCT. to Case Rth JC 0.112 C/W Fig. 18
Package Resistance, M1 (High-Side) R3-1 1.31 m TC = 25 C, ISD = 350 A, Note 2
1.84 m TC = 125 C, ISD = 350 A, Note 2
Package Resistance, M2 (Low-Side) R1-2 1.26 m TC = 25 C, ISD = 350 A, Note 2
1.77 m TC = 125 C, ISD = 350 A, Note 2
Stray Inductance LStray 11.1 nH Between DC- and DC+, f = 10 MHz
Case Temperature TC -40 125 C
Mounting Torque MS 4 5 5.5 N-m Baseplate, M6-1.0 bolts 4 5 5.5 Power Terminals, M6-1.0 bolts
Weight W 300 g
Case Isolation Voltage Visol 5 kV AC, 50 Hz, 1 minute
Clearance Distance 9 mm Terminal to Terminal 30 Terminal to Baseplate
Creepage Distance 30 mm Terminal to Terminal 40 Terminal to Baseplate

2410301853_Wolfspeed-CAS350M12BM3_C20544204.pdf

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