VBsemi Elec IRF9640STRLPBF VB P channel MOSFET designed for power switching and fast switching speed
Key Attributes
Model Number:
IRF9640STRLPBF-VB
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
500mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
81pF
Number:
1 P-Channel
Output Capacitance(Coss):
370pF
Input Capacitance(Ciss):
1.2nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
44nC
Mfr. Part #:
IRF9640STRLPBF-VB
Package:
TO-263(D2PAK)
Product Description
Product Overview
The IRF9640STRLPBF-VB is a high-performance P-channel MOSFET designed for various electronic applications. It features a dynamic dV/dt rating, repetitive avalanche rating, fast switching capabilities, and ease of paralleling, simplifying drive requirements. This MOSFET is suitable for applications requiring robust and efficient power switching.
Product Attributes
- Brand: VBsemi
- Part Number: IRF9640STRLPBF-VB
- Configuration: Single
- Package: TO-263
- Origin: Taiwan
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| P-Channel MOSFET | ||||||
| Drain-Source Voltage | VDS | -200 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC = 25 C) | ID | VGS = -10 V | -11 | A | ||
| Continuous Drain Current (TC = 100 C) | ID | VGS = -10 V | -6.8 | A | ||
| Pulsed Drain Current | IDM | a | -44 | A | ||
| Repetitive Avalanche Current | IAR | a | -11 | A | ||
| Maximum Power Dissipation (TC = 25 C) | PD | 125 | W | |||
| Peak Diode Recovery dV/dt | dV/dt | c | -5.0 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | C | ||
| Drain-Source On-State Resistance | RDS(on) | ID = -6.6 A, VGS = -10 V b | 0.50 | |||
| Total Gate Charge | Qg | ID = -11 A, VDS = -160 V, VGS = -10 V b | 44 | nC | ||
| Gate-Source Charge | Qgs | 7.1 | nC | |||
| Gate-Drain Charge | Qgd | 27 | nC | |||
| Static Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = -250 A | -200 | V | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = -250 A | -2.0 | -4.0 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -200 V, VGS = 0 V | -100 | A | ||
| Zero Gate Voltage Drain Current (TJ = 125 C) | IDSS | VDS = -160 V, VGS = 0 V | -500 | A | ||
| Forward Transconductance | gfs | VDS = -50 V, ID = -6.6 A b | 4.1 | S | ||
| Input Capacitance | Ciss | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 200 | pF | ||
| Output Capacitance | Coss | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 370 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 81 | pF | ||
| Turn-On Delay Time | td(on) | VDD = -100 V, ID = -11 A, RG = 9.1 , RD = 8.6 | 4 | ns | ||
| Rise Time | tr | VDD = -100 V, ID = -11 A, RG = 9.1 , RD = 8.6 | 43 | ns | ||
| Turn-Off Delay Time | td(off) | VDD = -100 V, ID = -11 A, RG = 9.1 , RD = 8.6 | 39 | ns | ||
| Fall Time | tf | VDD = -100 V, ID = -11 A, RG = 9.1 , RD = 8.6 | 38 | ns | ||
| Internal Drain Inductance | LD | Between lead, 6 mm from package and center of die contact | 4.5 | nH | ||
| Internal Source Inductance | LS | 7.5 | nH | |||
| Gate Input Resistance | Rg | f = 1 MHz, open drain | 0.3 | 1.7 | ||
| Continuous Source-Drain Diode Current | IS | -11 | A | |||
| Pulsed Diode Forward Current | ISM | a | -44 | A | ||
| Body Diode Voltage | VSD | TJ = 25 C, IS = -11 A, VGS = 0 V b | -5 | V | ||
| Body Diode Reverse Recovery Time | trr | TJ = 25 C, IF = -11 A, dI/dt = 100 A/s b | 250 | 300 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 3.6 | C |
2504211840_VBsemi-Elec-IRF9640STRLPBF-VB_C47993897.pdf
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