VBsemi Elec TPC8107 9 VB P Channel TrenchFET MOSFET for Notebook Adaptor Load Switching Applications
Key Attributes
Model Number:
TPC8107&9-VB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
390pF
Number:
1 P-Channel
Output Capacitance(Coss):
455pF
Input Capacitance(Ciss):
2.55nF@15V
Pd - Power Dissipation:
2.7W
Gate Charge(Qg):
29.5nC@15V
Mfr. Part #:
TPC8107&9-VB
Package:
SO-8
Product Description
Product Overview
This P-Channel 30-V (D-S) TrenchFET Power MOSFET is designed for load switching applications in notebook adaptors. It features 100% Rg and UIS tested, and is halogen-free. Key specifications include a low on-resistance of 0.011 at VGS = -10 V and 0.015 at VGS = -4.5 V, with a continuous drain current of up to 13.5 A.
Product Attributes
- Brand: VBsemi (implied by website and part number prefix)
- Certifications: RoHS COMPLIANT, Halogen-free
- Type: P-Channel MOSFET
- Technology: TrenchFET Power MOSFET
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = -250 A | -30 | V | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = -250 A | -1.4 | -2.5 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -30 V, VGS = 0 V | -1 | A | ||
| On-State Drain Current | ID(on) | VDS -10 V, VGS = -10 V | -30 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10 V, ID = -10 A | 0.011 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5 V, ID = -8 A | 0.015 | |||
| Input Capacitance | Ciss | VDS = -15 V, VGS = 0 V, f = 1 MHz | 2550 | pF | ||
| Output Capacitance | Coss | VDS = -15 V, VGS = 0 V, f = 1 MHz | 455 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -15 V, VGS = 0 V, f = 1 MHz | 390 | pF | ||
| Total Gate Charge | Qg | VDS = -15 V, VGS = -10 V, ID = -10 A | 57 | 86 | nC | |
| Total Gate Charge | Qg | VDS = -15 V, VGS = -4.5 V, ID = -10 A | 29.5 | 45 | nC | |
| Gate Resistance | Rg | f = 1 MHz | 0.5 | 2.2 | ||
| Turn-On Delay Time | td(on) | VDD = -15 V, RL = 1.5 , ID -10 A, VGEN = -10 V, Rg = 1 | 13 | 25 | ns | |
| Turn-Off Delay Time | td(off) | VDD = -15 V, RL = 1.5 , ID -10 A, VGEN = -10 V, Rg = 1 | 40 | 70 | ns | |
| Continuous Source-Drain Diode Current | IS | TC = 25 C | -4.1 | A | ||
| Body Diode Reverse Recovery Time | trr | IF = -10 A, dI/dt = 100 A/s, TJ = 25 C | 27 | 45 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF = -10 A, dI/dt = 100 A/s, TJ = 25 C | 16 | 27 | nC |
2410121826_VBsemi-Elec-TPC8107-9-VB_C6705332.pdf
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