High Current Handling VBsemi Elec SIR422DP T1 GE3 VB N Channel MOSFET for Voltage Regulator Modules
Key Attributes
Model Number:
SIR422DP-T1-GE3-VB
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
670pF@15V
Number:
1 N-channel
Output Capacitance(Coss):
975pF
Pd - Power Dissipation:
6.15W
Input Capacitance(Ciss):
1.195nF@15V
Gate Charge(Qg):
57.3nC@10V
Mfr. Part #:
SIR422DP-T1-GE3-VB
Package:
DFN5x6-8
Product Description
SIR422DP-T1-GE3-VB N-Channel MOSFET
The SIR422DP-T1-GE3-VB is a high-performance N-Channel Trench Power MOSFET designed for demanding applications. It features low on-resistance and high current handling capabilities, making it suitable for core power delivery in notebook PCs and Voltage Regulator Modules (VRMs/POLs).
Product Attributes
- Brand: VBsemi
- Origin: Taiwan
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max. | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TC = 25 °C) | ID | (TJ = 175 °C) | 70a,e | A | ||
| Continuous Drain Current (TC = 70 °C) | ID | (TJ = 175 °C) | 60e | A | ||
| Continuous Drain Current (TA = 25 °C) | ID | (TJ = 175 °C) | 19b,c | A | ||
| Continuous Drain Current (TA = 70 °C) | ID | (TJ = 175 °C) | 18.6b,c | A | ||
| Pulsed Drain Current | IDM | 100 | A | |||
| Avalanche Current | IAS | L = 0.1 mH | 70a,e | A | ||
| Single Pulse Avalanche Energy | EAS | 47.2 | mJ | |||
| Continuous Source-Drain Diode Current | IS | (TC = 25 °C) | 70a,e | A | ||
| Continuous Source-Drain Diode Current | IS | (TA = 25 °C) | 2.36b,c | A | ||
| Maximum Power Dissipation (TC = 25 °C) | PD | 100 | W | |||
| Maximum Power Dissipation (TC = 70 °C) | PD | 55 | W | |||
| Maximum Power Dissipation (TA = 25 °C) | PD | 6.15b,c | W | |||
| Maximum Power Dissipation (TA = 70 °C) | PD | 3.07b,c | W | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Maximum Junction-to-Ambient | RthJA | t ≤ 10 s | 56 | 75 | °C/W | |
| Maximum Junction-to-Case (Steady State) | RthJC | 0.8 | 1.1 | °C/W | ||
| SPECIFICATIONS | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 µA | 40 | V | ||
| VDS Temperature Coefficient | ΔVDS/TJ | ID = 250 µA | 35 | mV/°C | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 µA | 1.2 | 2.5 | V | |
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -5.5 | mV/°C | |||
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = ±20 V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 40 V, VGS = 0 V | 1 µA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS = 40 V, VGS = 0 V, TJ = 55 °C | 10 | µA | ||
| On-State Drain Current | ID(on) | VDS ≥ 5 V, VGS = 10 V | 70 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 32 A | 0.0050 | 0.0060 | Ω | |
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5 V, ID = 29 A | 0.0060 | 0.0070 | Ω | |
| Forward Transconductance | gfs | VDS = 15 V, ID = 32 A | 110 | S | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss | VDS = 12.5 V, VGS = 0 V, f = 1 MHz | 1195 | 1315 | pF | |
| Output Capacitance | Coss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 570 | 630 | pF | |
| Reverse Transfer Capacitance | Crss | VDS = 15 V, VGS = 10 V, f = 1 MHz | 70 | pF | ||
| Total Gate Charge | Qg | VDS = 15 V, VGS = 10 V, ID = 32 A | 67 | nC | ||
| Gate-Source Charge | Qgs | VDS = 15 V, VGS = 4.5 V, ID = 29 A | 23.3 | nC | ||
| Gate-Drain Charge | Qgd | 1.4 | 2.1 | nC | ||
| Gate Resistance | Rg | 5 | Ω | |||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 0.555 Ω, ID ≈ 27 A, VGEN = 10 V, Rg = 1 Ω | 18 | 27 | ns | |
| Rise Time | tr | 11 | 17 | ns | ||
| Turn-Off Delay Time | td(off) | 70 | 105 | ns | ||
| Fall Time | tf | 10 | 15 | ns | ||
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 0.625 Ω, ID ≈ 24 A, VGEN = 4.5 V, Rg = 1 Ω | 55 | 83 | ns | |
| Rise Time | tr | 180 | 270 | ns | ||
| Turn-Off Delay Time | td(off) | 55 | 83 | ns | ||
| Fall Time | tf | 12 | 18 | ns | ||
| DRAIN-SOURCE BODY DIODE CHARACTERISTICS | ||||||
| Continuous Source-Drain Diode Current | IS | TC = 25 °C | 70 | A | ||
| Pulse Diode Forward Current | ISM | 100 | A | |||
| Body Diode Voltage | VSD | IS = 70 A, d(I)/dt = 100 A/µs | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 52 | 78 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 70.2 | 105 | nC | ||
2504180925_VBsemi-Elec-SIR422DP-T1-GE3-VB_C6705323.pdf
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