220F Packaged Silicon N Channel VDMOSFET XCH 7N65F Ideal for Power Switching and Enhanced Performance
Key Attributes
Model Number:
7N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
950mΩ@10V,3.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
37.5pF
Pd - Power Dissipation:
40W
Input Capacitance(Ciss):
1.08nF@25V
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
7N65F
Package:
TO-220F
Product Description
Product Overview
The XCH7N65F is a silicon N-channel Enhanced VDMOSFET utilizing self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency. The device is packaged in a RoHS-compliant TO-220F package.
Product Attributes
- Brand: XCH
- Material: Silicon N-Channel
- Package: TO-220F
- Certifications: RoHS standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
| Absolute Maximum Ratings | ||||
| VDSS | Drain-to-Source Voltage | Tc=25 unless otherwise specified | 650 | V |
| ID | Continuous Drain Current | Tc=25 unless otherwise specified | 7 | A |
| ID | Continuous Drain Current | TC=100 C | 4.5 | A |
| IDMa1 | Pulsed Drain Current | 28 | A | |
| VGS | Gate-to-Source Voltage | 30 | V | |
| EAsa2 | Single Pulse Avalanche Energy | 500 | mJ | |
| EAra1 | Avalanche Energy, Repetitive | 54 | mJ | |
| IAR a1 | Avalanche Current | 3.3 | A | |
| dv/dta3 | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 40 | W | |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| Thermal Characteristics | ||||
| RJC | Thermal Resistance, Junction-to-Case | 3.13 | / W | |
| RJA | Thermal Resistance, Junction-to-Ambient | 100 | / W | |
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V,ID=250A | 650 | V |
| BVDSS/TJ | Bvdss Temperature Coefficient | ID=250uA,Reference25 | 0.67 | V/ |
| IDSS | Drain to Source Leakage Current | VDS=650V, VGS=0V,Ta=25 | 1.0 | A |
| IDSS | Drain to Source Leakage Current | VDS=520V, VGS=0V,Ta=125 | 100 | A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -100 | nA |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=3.5A | 1.25 | |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 2.0 to 4.0 | V |
| gfs | Forward Trans conductance | VDS=15V,ID=3.5A | 6.5 | S |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | VGS=0V VDS=25V f=1.0MHz | 1080 | pF |
| Coss | Output Capacitance | 93 | pF | |
| Crss | Reverse Transfer Capacitance | 37.5 | pF | |
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | ID=7A,VDD=325V VGS=10V,Rg=9.1 | 11 | ns |
| tr | Rise Time | 10 | ns | |
| td(OFF) | Turn-Off Delay Time | 36 | ns | |
| tf | Fall Time | 18 | ns | |
| Qg | Total Gate Charge | ID=7A,VDD=325V VGS=10V | 23 | nC |
| Qgs | Gate to Source Charge | 5 | nC | |
| Qgd | Gate to Drain (Miller)Charge | 8 | nC | |
| Source-Drain Diode Characteristics | ||||
| ISD | Continuous Source Current (Body Diode) | 7 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | 28 | A | |
| VSD | Diode Forward Voltage | IS=7A,VGS=0V | 1.5 | V |
| trr | Reverse Recovery Time | IS=7A,Tj=25 dIF/dt=100A/s,VGS=0V | 280 | ns |
| Qrr | Reverse Recovery Charge | 1400 | nC | |
2305091657_XCH-7N65F_C5455846.pdf
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