VBsemi Elec SI1308EDL VB Trench Power MOSFET N Channel for Portable Device Motor and Relay Switching
Key Attributes
Model Number:
SI1308EDL-VB
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
36mΩ@10V;40mΩ@4.5V;48mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
2.8W
Gate Charge(Qg):
8.8nC@10V
Mfr. Part #:
SI1308EDL-VB
Package:
SOT-323(SC-70)
Product Description
Product Overview
The SI1308EDL-VB is a N-Channel Trench Power MOSFET designed for various applications including portable devices and load switching for motors, relays, and solenoids. It offers low on-resistance and is tested for Rg, complying with RoHS directives.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free (IEC 61249-2-21 Definition), Compliant to RoHS Directive 2002/95/EC
- Material: Trench Power MOSFET
- Origin: Taiwan VBsemi Electronics Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 20 | V | ||
| VDS Temperature Coefficient | VDS/T J | ID = 250 A | 23 | mV/C | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 0.6 | 1.3 | V | |
| VGS(th) Temperature Coefficient | VGS(th)/T J | ID = 250 A | -3.2 | mV/C | ||
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 12 V | 25 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20 V, VGS = 0 V | 1 | A | ||
| On-State Drain Current | ID(on) | VDS 5 V, VGS = 4.5 V | 15 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 3.7 A | 0.036 | |||
| VGS = 4.5 V, ID = 3.6 A | 0.040 | |||||
| VGS = 2.5 V, ID = 1.5 A | 0.048 | |||||
| Forward Transconductance | gfs | VDS = 15 V, ID = 3.7 A | 17 | S | ||
| Total Gate Charge | Qg | VDS = 15 V, VGS = 10 V, ID = 3.7 A | 8.8 | 13.5 | nC | |
| Gate-Source Charge | Qgs | VDS = 15 V, VGS = 4.5 V, ID = 3.7 A | 4 | 6 | nC | |
| Gate-Drain Charge | Qgd | 0.9 | 1.1 | nC | ||
| Gate Resistance | Rg | f = 1 MHz | 0.4 | 2 | k | |
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 4.1 , ID 3.7 A, VGEN = 4.5 V, Rg = 1 | 0.29 | 0.58 | s | |
| Rise Time | tr | 0.4 | 0.8 | s | ||
| Turn-Off Delay Time | td(off) | 1.9 | 3.8 | s | ||
| Fall Time | tf | 0.75 | 1.5 | s | ||
| Continuous Source-Drain Diode Current | IS | TC = 25 C | 2.3 | A | ||
| Body Diode Voltage | VSD | IS = 3.7 A, VGS = 0 V | 0.85 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 3.7 A, dI/dt = 100 A/s, TJ = 25 C | 2 | 25 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 5 | 10 | nC | ||
| Reverse Recovery Fall Time | ta | 6.5 | ns | |||
| Reverse Recovery Rise Time | tb | 5.5 | ns |
2504180925_VBsemi-Elec-SI1308EDL-VB_C4355112.pdf
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