Load Switching P Channel MOSFET VBsemi Elec 30P06 VB Featuring 60V Drain Source Breakdown Voltage
Key Attributes
Model Number:
30P06-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V;25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
305pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.95nF@25V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
30P06-VB
Package:
TO-252
Product Description
Product Overview
The 30P06-VB is a P-Channel 60V Trench Power MOSFET designed for load switching applications. It offers low on-resistance and is suitable for various electronic circuits requiring efficient power management.
Product Attributes
- Brand: VBsemi
- Material Categorization: RoHS Compliant, Halogen-Free
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = - 250 A | - 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = - 250 A | - 1.5 | - 3 | V | |
| Gate-Body Leakage | IGSS | VGS = 20 V, VDS = 0 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = - 60 V, VGS = 0 V | - 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = - 60 V, VGS = 0 V, TJ = 125 C | - 50 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = - 60 V, VGS = 0 V, TJ = 150 C | - 100 | A | ||
| On-State Drain Current | ID(on) | VDS = - 5 V, VGS = - 10 V | - 50 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 17 A | 0.020 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = - 4.5 V, ID = - 14 A | 0.025 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 40 A, TJ = 125 C | 0.030 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 40 A, TJ = 150 C | 0.035 | |||
| Forward Transconductance | gfs | VDS = - 15 V, ID = - 17 A | 61 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = - 25 V, f = 1 MHz | 2950 | pF | ||
| Output Capacitance | Coss | 380 | pF | |||
| Reverse Transfer Capacitance | Crss | 305 | pF | |||
| Total Gate Charge | Qg | VDS = - 30 V, VGS = - 10 V, ID = - 40 A | 110 | 165 | nC | |
| Gate-Source Charge | Qgs | 19 | nC | |||
| Gate-Drain Charge | Qgd | 28 | nC | |||
| Turn-On Delay Time | td(on) | VDD = - 30 V, RL = 0.6 , ID - 40 A, VGEN = - 10 V, RG = 6 | 15 | 23 | ns | |
| Rise Time | tr | 70 | 105 | ns | ||
| Turn-Off Delay Time | td(off) | 175 | 260 | ns | ||
| Fall Time | tf | 175 | 260 | ns | ||
| Source-Drain Diode Ratings and Characteristics | ||||||
| Continuous Current | IS | TC = 25 C | - 40 | A | ||
| Pulsed Current | ISM | - 80 | A | |||
| Forward Voltage | VSD | IF = - 40 A, VGS = 0 V | - 1 | - 1.6 | V | |
| Reverse Recovery Time | trr | IF = - 40 A, dI/dt = 100 A/s | 45 | 70 | ns | |
2504171620_VBsemi-Elec-30P06-VB_C709875.pdf
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