General purpose NPN transistor XZT MMBT2222A in SOT23 package ideal for amplification and switching
Key Attributes
Model Number:
MMBT2222A
Product Custom Attributes
Current - Collector Cutoff:
10nA
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
100@150mA,1V
Transition Frequency(fT):
300MHz
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT2222A
Package:
SOT-23
Product Description
MMBT2222A TRANSISTOR (NPN)
The MMBT2222A is an NPN epitaxial planar die construction transistor. It is available in a SOT-23 package. A complementary PNP type, MMBT2907A, is also available. This transistor is suitable for various electronic applications requiring amplification and switching functions.
Product Attributes
- Brand: XT ELECTRONICS
- Package Type: SOT-23
- Transistor Type: NPN
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 75 | V | |||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current - Continuous | IC | 600 | mA | |||
| Collector Dissipation | PC | (Ta=25 unless otherwise noted) | 300 | mW | ||
| Thermal Resistance, Junction to Ambient | RJA | 417 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC= 10A, IE=0 | 75 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 10mA, IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 0.01 | A | ||
| Collector cut-off current | ICEX | CE V =30V,VEB(off)=3V | 0.01 | A | ||
| Emitter cut-off current | IEBO | VEB= 3V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=10V, IC= 150mA | 100 | 300 | ||
| DC current gain | hFE(2) | VCE=10V, IC= 0.1mA | 40 | |||
| DC current gain | hFE(3) | VCE=10V, IC= 500mA | 42 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500 mA, IB= 50mA | 1 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=150 mA, IB=15mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500 mA, IB= 50mA | 2.0 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=150 mA, IB=15mA | 1.2 | V | ||
| Transition frequency | fT | VCE=20V, IC= 20mA, f=100MHz | 300 | MHz | ||
| Delay time | td | 10 | ns | |||
| Rise time | tr | VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA | 25 | ns | ||
| Storage time | tS | 225 | ns | |||
| Fall time | tf | VCC=30V, IC=150mA IB1=-IB2=15mA | 60 | ns |
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
| A | 0.900 - 1.150 | 0.035 - 0.045 |
| A1 | 0.000 - 0.100 | 0.000 - 0.004 |
| A2 | 0.900 - 1.050 | 0.035 - 0.041 |
| b | 0.300 - 0.500 | 0.012 - 0.020 |
| c | 0.080 - 0.150 | 0.003 - 0.006 |
| D | 2.800 - 3.000 | 0.110 - 0.118 |
| E | 1.200 - 1.400 | 0.047 - 0.055 |
| E1 | 2.250 - 2.550 | 0.089 - 0.100 |
| e | 1.800 - 2.000 | 0.071 - 0.079 |
| e1 | 0.950 TYP | 0.037 TYP |
| L | 0.550 REF | 0.022 REF |
| L1 | 0.300 - 0.500 | 0.012 - 0.020 |
| 0 - 8 | 0 - 8 |
SOT-23 Suggested Pad Layout
2410121612_XZT-MMBT2222A_C5805817.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
