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quality Power switching trench mosfet XCH XCH3400 with excellent cdvdt effect and green product rating factory
quality Power switching trench mosfet XCH XCH3400 with excellent cdvdt effect and green product rating factory

Power switching trench mosfet XCH XCH3400 with excellent cdvdt effect and green product rating

Key Attributes
Model Number: XCH3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
23mΩ@10V,4.2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
42pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
602pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
4.8nC@15V
Mfr. Part #:
XCH3400
Package:
SOT-23
Product Description

Product Overview

The XCH3400 is a high cell density trenched N-channel MOSFET designed for excellent RDS(on) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include a green device option, super low gate charge, and excellent Cdv/dt effect decline, achieved through advanced high cell density trench technology.

Product Attributes

  • Brand: XCH
  • Model: XCH3400
  • Technology: Trench MOSFET
  • Certifications: RoHS, Green Product

Technical Specifications

SymbolParameterTest ConditionMin.Typ.Max.Units
Absolute Maximum Ratings
VDSDrain-Source Voltage30V
VGSGate-Source Voltage±12V
ID@TA=25Continuous Drain Current, VGS @ 10V15.8A
ID@TA=70Continuous Drain Current, VGS @ 10V14.2A
IDMPulsed Drain Current223.4A
PD@TA=25Total Power Dissipation31.5W
TSTGStorage Temperature Range-55150
TJOperating Junction Temperature Range-55150
Thermal Data
RJAThermal Resistance Junction-ambient192/W
RJCThermal Resistance Junction-Case1------/W
Electrical Characteristics (TJ=25 unless otherwise specified)
V(BR)DSSDrain-Source Breakdown VoltageVGS=0V, ID=250µA30--V
IDSSZero Gate Voltage Drain CurrentVDS=30V, VGS=0V--1.0µA
IGSSGate to Body Leakage CurrentVDS=0V, VGS= ±12V--±100nA
VGS(th)Gate Threshold VoltageVDS=VGS, ID=250µA0.50.91.4V
RDS(on)Static Drain-Source on-Resistancenote2VGS=10V, ID=4.2A-2328mΩ
VGS=4.5V, ID=4A-2734V
RDS(on)Static Drain-Source on-Resistancenote2VGS=2.5V, ID=1A-3650mΩ
Dynamic Characteristics
CissInput CapacitanceVDS=15V, VGS=0V, f=1.0MHz-602-pF
CossOutput Capacitance-56-pF
CrssReverse Transfer Capacitance-42-pF
QgTotal Gate ChargeVDS=15V, ID=4A, VGS=4.5V-4.8-nC
QgsGate-Source Charge-1.2-nC
QgdGate-Drain (Miller) Charge-1.7-nC
Switching Characteristics
td(on)Turn-on Delay TimeVDS=15V, ID=4A, RGEN=3Ω, VGS =4.5V-12-ns
trTurn-on Rise Time-52-ns
td(off)Turn-off Delay Time-17-ns
tfTurn-off Fall Time-10-ns
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain to Source Diode Forward Current--6.0A
ISMMaximum Pulsed Drain to Source Diode Forward Current--23.2A
VSDDrain to Source Diode Forward VoltageVGS=0V, IS=5.8A--1.2V

2312160132_XCH-XCH3400_C7441443.pdf
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