IGBT 600V VBsemi Elec VBE16I07 featuring low turn off losses and avalanche energy rating for power supplies
Product Overview
The VBE16I07 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, ultra-low gate charge (Qg), and is avalanche energy rated (UIS). This IGBT is suitable for a wide range of applications including telecommunications (server and telecom power supplies), lighting (HID, fluorescent ballast), consumer and computing (ATX power supplies), industrial (welding, battery chargers), renewable energy (solar PV inverters), and switch mode power supplies (SMPS).
Product Attributes
- Brand: VBsemi
- Model: VBE16I07
- Package: TO-252
- RoHS Compliant: Yes
- Halogen-Free: Yes
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | VGE = 0 V, IC = 250 A | 600 | - | - | V |
| Gate-Emitter Threshold Voltage | VGE(th) | VCE = VGE, ID = 250 A | 4 | 5 | 6 | V |
| Zero Gate Voltage Collector Current | ICES | VCE = 600 V, VGE = 0 V, TJ = 25 C | - | 1 | 20 | A |
| Zero Gate Voltage Collector Current | ICES | VCE = 600 V, VGE = 0 V, TJ = 150 C | - | - | 1000 | A |
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGS = 20 V | - | - | 100 | nA |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 7 A | - | 1.6 | - | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 7 A | - | 1.75 | - | V |
| Forward Transconductance | gfs | VCE = 20 V, IC = 7 A | - | 40 | - | S |
| Input Capacitance | Cies | VGE = 0 V, VCE = 25 V, f = 500 KHz | - | 1400 | - | pF |
| Output Capacitance | Coes | VGE = 0 V, VCE = 25 V, f = 500 KHz | - | 76 | - | pF |
| Reverse Transfer Capacitance | Cres | VGE = 0 V, VCE = 25 V, f = 500 KHz | - | 21 | - | pF |
| Total Gate Charge | Qg | IC = 7 A, VCE = 400 V, VGE = 15 V | - | 18 | - | nC |
| Gate-Emitter Charge | Qge | IC = 7 A, VCE = 400 V, VGE = 15 V | - | 15 | - | nC |
| Gate to Collector Charge | Qgc | IC = 7 A, VCE = 400 V, VGE = 15 V | - | 33 | - | nC |
| Turn-On Delay Time | td(on) | VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 | - | 45 | - | ns |
| Rise Time | tr | VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 | - | 25 | - | ns |
| Turn-Off Delay Time | td(off) | VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 | - | 115 | - | ns |
| Fall Time | tf | VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 | - | 24 | - | ns |
| Internal emitter inductance | LE | - | - | 13 | - | nH |
| Diode Forward Current | IF | - | - | - | 7 | A |
| Pulsed Diode Forward Current | IFM | - | - | - | 21 | A |
| Diode Forward Voltage | VF | IF = 7 A | - | 1.75 | 2.1 | V |
| Reverse Recovery Time | trr | TJ = 25 C, IF = 7 A, dIF/dt = 200 A/s, VR = 400 V | - | 70 | - | ns |
| Reverse Recovery Charge | Qrr | TJ = 25 C, IF = 7 A, dIF/dt = 200 A/s, VR = 400 V | - | 0.26 | - | C |
| Reverse Recovery Current | IRRM | TJ = 25 C, IF = 7 A, dIF/dt = 200 A/s, VR = 400 V | - | 9 | - | A |
| Collector-Emitter Voltage | VCE | TC=25 | - | - | 600 | V |
| Continuous Collector Current | IC | TC=25 | - | - | 14 | A |
| Continuous Collector Current | IC | TC=100 | - | - | 7 | A |
| Pulsed Collector Current | ICM | - | - | - | 21 | A |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1.6 | - | V |
| Maximum Power Dissipation | PD | TC = 25 C | - | - | 55 | W |
| Maximum Power Dissipation | PD | TC = 100 C | - | - | 43 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | - | -55 | - | +175 | C |
| Short Circuit Withstand Time | tSC | VGE= 15V, VCE 400V, TC=150 | - | - | 3 | s |
| Short Circuit Withstand Time | tSC | VGE= 15V, VCE 400V, TC=100 | - | - | 5 | s |
| Soldering Recommendations (Peak Temperature) | - | for 10 s | - | - | 260 | C |
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | - | - | 40 | - | C/W |
| Maximum Junction-to-Case Thermal Resistance | RthJC | - | - | 1.6 | - | C/W |
2412131800_VBsemi-Elec-VBE16I07_C42412433.pdf
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