IGBT 600V VBsemi Elec VBE16I07 featuring low turn off losses and avalanche energy rating for power supplies

Key Attributes
Model Number: VBE16I07
Product Custom Attributes
Mfr. Part #:
VBE16I07
Package:
TO-252
Product Description

Product Overview

The VBE16I07 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, ultra-low gate charge (Qg), and is avalanche energy rated (UIS). This IGBT is suitable for a wide range of applications including telecommunications (server and telecom power supplies), lighting (HID, fluorescent ballast), consumer and computing (ATX power supplies), industrial (welding, battery chargers), renewable energy (solar PV inverters), and switch mode power supplies (SMPS).

Product Attributes

  • Brand: VBsemi
  • Model: VBE16I07
  • Package: TO-252
  • RoHS Compliant: Yes
  • Halogen-Free: Yes

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Collector-Emitter Voltage VCE VGE = 0 V, IC = 250 A 600 - - V
Gate-Emitter Threshold Voltage VGE(th) VCE = VGE, ID = 250 A 4 5 6 V
Zero Gate Voltage Collector Current ICES VCE = 600 V, VGE = 0 V, TJ = 25 C - 1 20 A
Zero Gate Voltage Collector Current ICES VCE = 600 V, VGE = 0 V, TJ = 150 C - - 1000 A
Gate-Emitter Leakage Current IGES VCE = 0 V, VGS = 20 V - - 100 nA
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 7 A - 1.6 - V
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 7 A - 1.75 - V
Forward Transconductance gfs VCE = 20 V, IC = 7 A - 40 - S
Input Capacitance Cies VGE = 0 V, VCE = 25 V, f = 500 KHz - 1400 - pF
Output Capacitance Coes VGE = 0 V, VCE = 25 V, f = 500 KHz - 76 - pF
Reverse Transfer Capacitance Cres VGE = 0 V, VCE = 25 V, f = 500 KHz - 21 - pF
Total Gate Charge Qg IC = 7 A, VCE = 400 V, VGE = 15 V - 18 - nC
Gate-Emitter Charge Qge IC = 7 A, VCE = 400 V, VGE = 15 V - 15 - nC
Gate to Collector Charge Qgc IC = 7 A, VCE = 400 V, VGE = 15 V - 33 - nC
Turn-On Delay Time td(on) VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 - 45 - ns
Rise Time tr VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 - 25 - ns
Turn-Off Delay Time td(off) VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 - 115 - ns
Fall Time tf VCE = 400 V, VGE = 15 V, IC = 7 A, Rg = 10 - 24 - ns
Internal emitter inductance LE - - 13 - nH
Diode Forward Current IF - - - 7 A
Pulsed Diode Forward Current IFM - - - 21 A
Diode Forward Voltage VF IF = 7 A - 1.75 2.1 V
Reverse Recovery Time trr TJ = 25 C, IF = 7 A, dIF/dt = 200 A/s, VR = 400 V - 70 - ns
Reverse Recovery Charge Qrr TJ = 25 C, IF = 7 A, dIF/dt = 200 A/s, VR = 400 V - 0.26 - C
Reverse Recovery Current IRRM TJ = 25 C, IF = 7 A, dIF/dt = 200 A/s, VR = 400 V - 9 - A
Collector-Emitter Voltage VCE TC=25 - - 600 V
Continuous Collector Current IC TC=25 - - 14 A
Continuous Collector Current IC TC=100 - - 7 A
Pulsed Collector Current ICM - - - 21 A
Collector-Emitter Saturation Voltage VCE(sat) - - 1.6 - V
Maximum Power Dissipation PD TC = 25 C - - 55 W
Maximum Power Dissipation PD TC = 100 C - - 43 W
Operating Junction and Storage Temperature Range TJ, Tstg - -55 - +175 C
Short Circuit Withstand Time tSC VGE= 15V, VCE 400V, TC=150 - - 3 s
Short Circuit Withstand Time tSC VGE= 15V, VCE 400V, TC=100 - - 5 s
Soldering Recommendations (Peak Temperature) - for 10 s - - 260 C
Maximum Junction-to-Ambient Thermal Resistance RthJA - - 40 - C/W
Maximum Junction-to-Case Thermal Resistance RthJC - - 1.6 - C/W

2412131800_VBsemi-Elec-VBE16I07_C42412433.pdf

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