Fast Switching MOSFETs XR40G04F Series N Channel and P Channel for Power Management Solutions
Key Attributes
Model Number:
XR40G04F
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
RDS(on):
11.5mΩ@10V;17.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V;2.5V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
96pF;135pF
Input Capacitance(Ciss):
964pF;1.75nF
Pd - Power Dissipation:
20W;38W
Output Capacitance(Coss):
109pF;147pF
Gate Charge(Qg):
22.9nC@10V;30nC@10V
Mfr. Part #:
XR40G04F
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The XR40G04F is a series of N-Channel and P-Channel Fast Switching MOSFETs designed for high-efficiency power applications. Featuring advanced high cell density Trench technology, these MOSFETs offer super low gate charge and excellent CdV/dt effect decline, ensuring reliable performance in demanding switching scenarios. They are available as Green Devices.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Green Device Available
Technical Specifications
| Model | Parameter | N-Ch Rating | P-Ch Rating | Units | Conditions |
| XR40G04F | VDS (Drain-Source Voltage) | 40 | -40 | V | |
| VGS (Gate-Source Voltage) | 20 | 20 | V | ||
| ID@TC=25 (Continuous Drain Current) | 40 | -40 | A | VGS @ 10V | |
| ID@TC=100 (Continuous Drain Current) | 25 | -21 | A | VGS @ 10V | |
| IDM (Pulsed Drain Current) | 80 | -132 | A | ||
| EAS (Single Pulse Avalanche Energy) | 66 | 156 | mJ | ||
| PD@TC=25 (Total Power Dissipation) | 20 | 38 | W | ||
| TSTG (Storage Temperature Range) | -55 to 150 | -55 to 150 | |||
| TJ (Operating Junction Temperature Range) | -55 to 150 | -55 to 150 | |||
| RJA (Thermal Resistance Junction-Ambient) | 1 | 60 | /W | ||
| XR40G04F (N-Channel) | BVDSS (Drain-Source Breakdown Voltage) | 40 | V | VGS=0V , ID=250uA | |
| RDS(ON) (Static Drain-Source On-Resistance) | 17.5 | m | VGS=10V , ID=1A | ||
| VGS(th) (Gate Threshold Voltage) | 1.0 to 2.5 | V | VGS=VDS , ID =250uA | ||
| IDSS (Drain-Source Leakage Current) | 1 | uA | VDS=40V , VGS=0V , TJ=25 | ||
| IGSS (Gate-Source Leakage Current) | 100 | nA | VGS=20V , VDS=0V | ||
| gfs (Forward Transconductance) | 33 | S | VDS=5V , ID=8A | ||
| Qg (Total Gate Charge) | 964 | nC | VDS=20V , VGS=10V , ID=8A | ||
| Td(on) (Turn-On Delay Time) | 14 | ns | VGS=10V, VDD=20V, RG=3, ID=10A | ||
| Tr (Rise Time) | 24 | ns | |||
| Td(off) (Turn-Off Delay Time) | 12 | ns | |||
| XR40G04F (P-Channel) | BVDSS (Drain-Source Breakdown Voltage) | -40 | V | VGS=0V , ID=-250uA | |
| RDS(ON) (Static Drain-Source On-Resistance) | 17.5 to 24.5 | m | VGS=-10V , ID=-1A | ||
| VGS(th) (Gate Threshold Voltage) | -1.0 to -2.5 | V | VGS=VDS , ID =-250uA | ||
| IDSS (Drain-Source Leakage Current) | -1 | uA | VDS=-40V , VGS=0V , TJ=25 | ||
| IGSS (Gate-Source Leakage Current) | 100 | nA | VGS= 20V , VDS=0V | ||
| gfs (Forward Transconductance) | 12 | S | VDS=-5V , ID=-5A | ||
| Qg (Total Gate Charge) | 1750 | nC | VDS=-20V , VGS=-10V , ID=-5A | ||
| Td(on) (Turn-On Delay Time) | 5.5 | ns | VDD=-20V , VGS=-10V , RG=3.3 | ||
| Tr (Rise Time) | 9 | ns | |||
| Td(off) (Turn-Off Delay Time) | 10 | ns |
2507241530_XNRUSEMI-XR40G04F_C49328945.pdf
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