Low Gate Charge N Channel MOSFET XYD X10N70DHC3 Suitable for AC DC Quick Chargers and Power Supplies
Key Attributes
Model Number:
X10N70DHC3
Product Custom Attributes
Mfr. Part #:
X10N70DHC3
Package:
TO-220F-3L
Product Description
Product Overview
The X10N70DHC3 is an N-Channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers low gate charge, low Ciss, and fast switching, making it suitable for applications such as synchronous rectification for AC/DC quick chargers, battery management, and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Model: X10N70DHC3
- Package: TO-220F-3L
- Origin: China (implied by company location)
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | - | - | 700 | V | - |
| Gate-Source Voltage | VGS | -30 | - | 30 | V | - |
| Continuous Drain Current | ID | - | - | 10 | A | TC=25 (Note 1) |
| Pulsed Drain Current | IDM | - | - | 21 | A | (Note 2) |
| Single Pulse Avalanche Energy | EAS | - | - | 405 | mJ | L=10mH,VD=50V, TC=25 |
| Maximum Power Dissipation | PD | - | - | 79 | W | TC=25 |
| Maximum Power Dissipation | PD | - | - | 2.2 | W | TA=25 |
| Operating Junction and Storage Temperature Range | Tj,TSTG | -55 | - | 150 | - | |
| Thermal Characteristics | ||||||
| Thermal resistance, Junction to Case | Rth(J-c) | - | 1.57 | - | /W | - |
| Thermal resistance, Junction to Ambient | Rth(J-a) | - | 56 | - | - | - |
| Electrical Characteristics (Tj=25,unless otherwise noted) | ||||||
| Static characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 700 | - | - | V | VGS=0V,ID=250A |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | A | VDS=700V,VGS=0V |
| Gate-Body Leakage Current,Forward | IGSSF | - | - | 100 | nA | VGS=30V,VDS=0V |
| Gate-Body Leakage Current,Reverse | IGSSR | - | - | -100 | nA | VGS=-30V,VDS=0V |
| Gate-Source Threshold Voltage | VGS(th) | 2 | - | 4 | V | VDS=VGS,ID=250A |
| Drain-Source On-State Resistance | RDS(on) | - | 1 | 1.2 | VGS=10V,ID=5A | |
| Gate Resistance | Rg | - | 2.3 | - | VGS=0V, VDS=0V, f=1MHz | |
| Forward Transconductance | gfs | - | 0.3 | - | S | VDS=40V,ID=5A |
| Dynamic characteristics | ||||||
| Input Capacitance | Ciss | - | 1651 | - | pF | VDS=25V,VGS=0V,f=1.0MHZ |
| Output Capacitance | Coss | - | 113 | - | pF | - |
| Reverse Transfer Capacitance | Crss | - | 4 | - | pF | - |
| Turn-On Delay Time | td(on) | - | 14 | - | ns | VDD=350V ,RG=10 ID=8A,VGS=10V |
| Turn-On Rise Time | tr | - | 17 | - | ns | - |
| Turn-Off Delay Time | td(off) | - | 29 | - | ns | - |
| Turn-Off Fall Time | tf | - | 32 | - | ns | - |
| Gate charge characteristics | ||||||
| Total Gate Charge | Qg | - | 28 | - | nC | VDS=560V,ID=8A,VGS=10V |
| Gate-Source Charge | Qgs | - | 10 | - | nC | - |
| Gate-Drain Charge | Qg | - | 5 | - | nC | - |
| Reverse diode | ||||||
| Continuous Diode Forward Current | IS | - | - | 10 | A | - |
| Pulsed Diode Forward Current | ISM | - | - | 21 | A | - |
| Diode Forward Voltage | VSD | - | - | 1.2 | V | IS=5A,VGS=0V |
| Reverse Recovery Time | trr | - | 365 | - | ns | VDS=30V,VGS=0V,Is=1A di/dt=100A/s |
| Reverse Recovery Charge | Qrr | - | 730 | - | nC | - |
2509251450_XYD-X10N70DHC3_C51952962.pdf
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