Phase Control Thyristor VISHAY VS-ST730C20L1 Single SCR BPUK Package for Industrial Motor Control

Key Attributes
Model Number: VS-ST730C20L1
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
-
Voltage - On State(Vtm):
-
Current - On State(It(RMS)):
2kA
Peak Off - State Voltage(Vdrm):
2kV
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
3V
Mfr. Part #:
VS-ST730C20L1
Package:
TO-200AC
Product Description

Product Overview

The Vishay Semiconductors VS-ST700CL Series are Phase Control Thyristors in a Hockey PUK version, designed for industrial-level applications. Featuring a center amplifying gate and a metal case with a ceramic insulator, these thyristors are housed in the international standard B-PUK (TO-200AC) package. They are ideal for use in DC motor controls, controlled DC power supplies, and AC controllers.

Product Attributes

  • Brand: Vishay Semiconductors
  • Case Style: B-PUK (TO-200AC)
  • Material Categorization: For definitions of compliance, see www.vishay.com/doc?99912
  • Circuit Configuration: Single SCR

Technical Specifications

Parameter Test Conditions Values Units
Primary Characteristics
Average On-State Current (IT(AV)) 910 A
Repetitive Peak Off-State Voltage (VDRM/VRRM) 1200, 1600, 1800, 2000 V
Peak On-State Voltage (VTM) Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.80 V
Gate Trigger Current (IGT) TJ = 25 C 100 mA
Operating Junction Temperature (TJ) -40 to +125 C
Package B-PUK (TO-200AC)
Major Ratings and Characteristics
Average On-State Current (IT(AV)) Ths = 55 C 910 A
RMS On-State Current (IT(RMS)) Ths = 25 C 1857 A
Peak Surge Current (ITSM) 50 Hz, t = 10 ms 15 700 A
Peak Surge Current (ITSM) 60 Hz, t = 8.3 ms 16 400 A
It 50 Hz, t = 10 ms 1232 kAs
It 60 Hz, t = 8.3 ms 1125 kAs
Repetitive Peak Off-State Voltage (VDRM/VRRM) 1200 to 2000 V
Typical Turn-off Time (tq) 150 s
Voltage Ratings
Type Number Voltage Code VDRM/VRRM, Maximum Repetitive Peak and Off-State Voltage (V) IDRM/IRRM Maximum at TJ = TJ Maximum (mA)
VS-ST700CL 12 1200 80
VS-ST700CL 16 1600 18
VS-ST700CL 18 1800 20
VS-ST700CL 20 2000 2100
Absolute Maximum Ratings
Maximum average on-state current at heatsink temperature 180 conduction, half sine wave, double side (single side) cooled 910 (355) A
55 (85) C
Maximum RMS on-state current DC at 25 C heatsink temperature, double side cooled 1857 A
Maximum peak, one-cycle non-repetitive surge current t = 10 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum 15 700 A
t = 8.3 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum 16 400 A
Maximum It for fusing t = 10 ms, No voltage reapplied 1232 kAs
Maximum It for fusing t = 8.3 ms, No voltage reapplied 1125 kAs
Low level value of threshold voltage TJ = TJ maximum 1.00 V
High level value of threshold voltage TJ = TJ maximum 1.13 V
Low level value of on-state slope resistance TJ = TJ maximum 0.40 m
High level value of on-state slope resistance TJ = TJ maximum 0.35 m
Maximum on-state voltage (VTM) Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.80 V
Maximum holding current (IH) TJ = 25 C, anode supply 12 V resistive load 600 mA
Typical latching current (IL) 1000 mA
Switching Parameters
Maximum non-repetitive rate of rise of turned-on current (dI/dt) Gate drive 20 V, 20 , tr 1 s, TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/s
Typical delay time (td) Gate current 1 A, dIg/dt = 1 A/s, Vd = 0.67 % VDRM, TJ = 25 C 1.0 s
Typical turn-off time (tq) ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V, 100 , tp = 500 s 150 s
Blocking Parameters
Maximum critical rate of rise of off-state voltage (dV/dt) TJ = TJ maximum, linear to 80 % rated VDRM 500 V/s
Maximum peak reverse and off-state leakage current (IRRM, IDRM) TJ = TJ maximum, rated VDRM/VRRM applied 80 mA
Triggering Parameters
Maximum peak gate power (PGM) TJ = TJ maximum, tp 5 ms 10.0 W
Maximum average gate power (PG(AV)) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current (IGM) TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage (+VGM) TJ = TJ maximum, tp 5 ms 20 V
Maximum peak negative gate voltage (-VGM) 5.0 V
DC gate current required to trigger (IGT) TJ = -40 C, 12 V anode to cathode applied 200 mA
DC gate current required to trigger (IGT) TJ = 25 C, 12 V anode to cathode applied 100 to 200 mA
DC gate current required to trigger (IGT) TJ = 125 C, 12 V anode to cathode applied 50 mA
DC gate voltage required to trigger (VGT) TJ = -40 C 2.5 V
DC gate voltage required to trigger (VGT) TJ = 25 C 1.8 to 3.0 V
DC gate voltage required to trigger (VGT) TJ = 125 C 1.1 V
DC gate current not to trigger (IGD) TJ = TJ maximum 10 mA
DC gate voltage not to trigger (VGD) 0.25 V
Thermal and Mechanical Specifications
Maximum operating junction temperature range (TJ) -40 to 125 C
Maximum storage temperature range (TStg) -40 to 150 C
Maximum thermal resistance, junction to heatsink (RthJ-hs) DC operation single side cooled 0.073 K/W
Maximum thermal resistance, junction to heatsink (RthJ-hs) DC operation double side cooled 0.031 K/W
Maximum thermal resistance, case to heatsink (RthC-hs) DC operation single side cooled 0.011 K/W
Maximum thermal resistance, case to heatsink (RthC-hs) DC operation double side cooled 0.006 K/W
Mounting force 10 % 14 700 (1500) N (kg)
Approximate weight 255 g

Ordering Information:

Device code example: VS-ST700CL20L

  • VS - Vishay Semiconductors
  • ST - Thyristor
  • 700 - Essential part number
  • C - Ceramic PUK
  • 20 - Voltage code x 100 = VRRM (e.g., 20 for 2000 V)
  • L - PUK case B-PUK (TO-200AC)
  • 1 - Fast-on terminals (gate and auxiliary cathode unsoldered leads)
  • 8 - Critical dV/dt: None = 500 V/s (standard selection)

Links to Related Documents:

  • Dimensions: www.vishay.com/doc?95076

2411272146_VISHAY-VS-ST730C20L1_C17667505.pdf

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