P channel MOSFET XYD X17P2P012TLN6 suitable for PWM applications load switching and power management
Key Attributes
Model Number:
X17P2P012TLN6
Product Custom Attributes
Mfr. Part #:
X17P2P012TLN6
Package:
DFN-6L(2x2)
Product Description
Product Overview
The X17P2P012TLN6 is a P-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability, low gate charge, and is a lead-free product. This MOSFET is suitable for applications such as PWM applications, load switching, and power management.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Origin: Xiamen
- Product Code: X17P2P012TLN6
- Package: DFN2*2-6L
- Packaging: Tape & Reel
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | -12 | V | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | ||
| Continuous Drain Current | ID | -11.5 | A | TA=25 | ||
| Continuous Drain Current | ID | -7.3 | A | TA=100 | ||
| Pulsed Drain Current | IDM | -46 | A | |||
| Maximum Power Dissipation | PD | 3 | W | TA=25 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA=100 | ||
| Operating Junction and Storage Temperature Range | Tj,TSTG | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction to Ambient | Rth(J-a) | 40 | /W | |||
| Key Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | -12 | V | VGS=0V,ID=250A | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-12V,VGS=0V | ||
| Gate-Body Leakage Current,Forward | IGSSF | 100 | nA | VGS=10V,VDS=0V | ||
| Gate-Body Leakage Current,Reverse | IGSSR | -100 | nA | VGS=-10V,VDS=0V | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.5 | -1 | V | VDS=VGS,ID=250A | |
| Drain-Source On-State Resistance | RDS(on) | 13.2 | 17.2 | m | VGS=-4.5V,ID=-5A | |
| Drain-Source On-State Resistance | RDS(on) | 19.6 | 26 | m | VGS=-2.5V,ID=-4A | |
| Forward Transconductance | gfs | 14 | S | VDS=-5V,ID=-5A | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | 1450 | pF | VDS=-10V,VGS=0V,f=1.0MHZ | ||
| Output Capacitance | Coss | 324 | pF | |||
| Reverse Transfer Capacitance | Crss | 283 | pF | |||
| Turn-On Delay Time | td(on) | 16 | ns | VDD=-10V,RGEN=3,VGS=-4.5V,RL=2 | ||
| Turn-On Rise Time | tr | 65 | ns | |||
| Turn-Off Delay Time | td(off) | 72 | ns | |||
| Turn-Off Fall Time | tf | 63 | ns | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | 16 | nC | VDS=-10V,ID=-5A,VGS=-4.5V | ||
| Gate-Source Charge | Qgs | 3.5 | nC | |||
| Gate-Drain Charge | Qgd | 4.2 | nC | |||
| Reverse Diode Characteristics | ||||||
| Continuous Diode Forward Current | ISD | -11.5 | A | |||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-5A,VGS=0V | ||
2509251450_XYD-X17P2P012TLN6_C51952857.pdf
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