86--136 6733 2386
quality Integrated diode transistor WeEn PHD13003C 126 suitable for electronic lighting and battery chargers factory
quality Integrated diode transistor WeEn PHD13003C 126 suitable for electronic lighting and battery chargers factory

Integrated diode transistor WeEn PHD13003C 126 suitable for electronic lighting and battery chargers

Key Attributes
Model Number: PHD13003C,126
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
-
DC Current Gain:
25@0.5A,2V
Transition Frequency(fT):
-
Vce Saturation(VCE(sat)):
1.5V
Type:
NPN
Pd - Power Dissipation:
2.1W
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
PHD13003C,126
Package:
TO-92
Product Description

Product Overview

The PHD13003C is a high voltage, high speed, planar passivated NPN power switching transistor featuring an integrated anti-parallel emitter-collector diode. It is designed for applications requiring fast switching, high DC current gain, and high voltage capability. This transistor is suitable for use in compact fluorescent lamps (CFL), low power electronic lighting ballasts, and off-line self-oscillating power supplies (SOPS) for battery charging.

Product Attributes

  • Brand: WeEn Semiconductors (formerly NXP Semiconductors)
  • Package Type: SOT54 (TO-92) plastic package

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
General Description
ICCollector current (DC)---1.5A
PtotTotal power dissipationTlead ≤25 °C; see Figure 1--2.1W
VCESMCollector-emitter peak voltageVBE = 0 V--700V
Static Characteristics
hFEDC current gainIC = 0.5 A; VCE = 2 V; Tj = 25 °C81725-
hFEDC current gainIC = 1 A; VCE = 2 V; Tj = 25 °C5915-
ICESCollector-emitter cut-off currentVBE = 0 V; VCE = 700 V--1mA
ICESCollector-emitter cut-off currentVBE = 0 V; VCE = 700 V; Tj = 100 °C--5mA
ICEOCollector-emitter cut-off currentVCE = 400 V; IB = 0 A; Tlead = 25 °C--0.1mA
IEBOEmitter-base cut-off currentVEB = 9 V; IC = 0 A; Tlead = 25 °C--1mA
VCEOsusCollector-emitter sustaining voltageIB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 °C; see Figure 3; see Figure 4400--V
VCEsatCollector-emitter saturation voltageIC = 0.5 A; IB = 0.1 A; Tlead = 25 °C--0.5V
VCEsatCollector-emitter saturation voltageIC = 1 A; IB = 0.25 A; Tlead = 25 °C--1V
VCEsatCollector-emitter saturation voltageIC = 1.5 A; IB = 0.5 A; Tlead = 25 °C--1.5V
VBEsatBase-emitter saturation voltageIC = 0.5 A; IB = 0.1 A; Tlead = 25 °C--1V
VBEsatBase-emitter saturation voltageIC = 1 A; IB = 0.25 A; Tlead = 25 °C--1.2V
VFForward voltageIF = 0.5 A; Tj = 25 °C--1.5V
Dynamic Characteristics
tonTurn-on timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; see Figure 5; see Figure 6--1µs
tsStorage timeIC = 1 A; IBon = 0.2 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load; see Figure 7; see Figure 8-0.8-µs
tfFall timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; see Figure 5; see Figure 6--0.7µs
tfFall timeIC = 0.5 A; IBon = 0.1 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load; see Figure 7; see Figure 8-0.1-µs
Limiting Values
VCESMCollector-emitter peak voltageVBE = 0 V--700V
VCBOCollector-base voltageIE = 0 A--700V
VCEOCollector-emitter voltageIB = 0 A--400V
ICCollector current (DC)---1.5A
ICMPeak collector current---3A
IBBase current (DC)---0.75A
IBMPeak base current---1.5A
PtotTotal power dissipationTlead ≤25 °C; see Figure 1--2.1W
TstgStorage temperature-65-150°C
TjJunction temperature--150°C
VEBOEmitter-base voltageIC = 0 A; I(Emitter) = 10 mA--9V
Thermal Characteristics
Rth(j-lead)Thermal resistance from junction to leadsee Figure 2--60K/W
Rth(j-a)Thermal resistance from junction to ambientin free air; printed-circuit board mounted; lead length = 4 mm-150-K/W

2410121840_WeEn-PHD13003C-126_C256387.pdf

Related Products
quality NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component factory
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
quality Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing factory
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
quality Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature factory
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
quality RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW factory
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.