High Current P Channel MOSFET XYD X4407IA for Portable Devices and Desktop PC Power Management
Key Attributes
Model Number:
X4407IA
Product Custom Attributes
Mfr. Part #:
X4407IA
Package:
SOP-8L
Product Description
Product Overview
The X4407IA is a P-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability with low gate charge, making it suitable for switch and power management applications in portable and desktop PCs. This lead-free product is designed for efficient operation.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Origin: China
- Product Code: X4407IA
- Package: SOP-8L
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | -30 | V | TA=25,unless otherwise noted | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | ||
| Continuous Drain Current | ID | -9.5 | A | TA=25 | ||
| Continuous Drain Current | ID | -6 | A | TA=100 | ||
| Pulsed Drain Current | IDM | -38 | A | |||
| Maximum Power Dissipation | PD | 1.67 | W | TA=25 | ||
| Maximum Power Dissipation | PD | 0.67 | W | TA=100 | ||
| Operating Junction and Storage Temperature Range | Tj,TSTG | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V,ID=-250A | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-30V,VGS=0V | ||
| Gate-Body Leakage Current,Forward | IGSSF | 100 | nA | VGS=20V,VDS=0V | ||
| Gate-Body Leakage Current,Reverse | IGSSR | -100 | nA | VGS=-20V,VDS=0V | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2 | V | VDS=VGS,ID=-250A | |
| Drain-Source On-State Resistance | RDS(on) | 9.7 | 11.6 | m | VGS=-10V,ID=-12A | |
| Drain-Source On-State Resistance | RDS(on) | 13 | 16.9 | m | VGS=-4.5V,ID=-7A | |
| Gate Resistance | Rg | 2.5 | VGS=0V, VDS =0V, f=1MHz | |||
| Forward Transconductance | gfs | 20 | S | VDS=-5V,ID=-7A | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | 1780 | pF | VDS=-15V,VGS=0V,f=1.0MHZ | ||
| Output Capacitance | Coss | 235 | pF | |||
| Reverse Transfer Capacitance | Crss | 200 | pF | |||
| Turn-On Delay Time | td(on) | 8 | ns | VDD=-15V,RG=3,VGS=-10V,RL=1 | ||
| Turn-On Rise Time | tr | 27 | ns | |||
| Turn-Off Delay Time | td(off) | 68 | ns | |||
| Turn-Off Fall Time | tf | 39 | ns | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | 36 | nC | VDS=-15V,ID=-15A,VGS=-10V | ||
| Gate-Source Charge | Qgs | 6.5 | nC | |||
| Gate-Drain Charge | Qgd | 8.5 | nC | |||
| Reverse Diode | ||||||
| Continuous Diode Forward Current | ISD | -9.5 | A | |||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-12A,VGS=0V | ||
| Reverse Recovery Time | trr | 13.5 | ns | VGS=0V,Is=-4Adi/dt=-100A/s | ||
| Reverse Recovery Charge | Qrr | 3.7 | nC | |||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction to Ambient | Rth(j-a) | 75 | /W | |||
2509251450_XYD-X4407IA_C51952843.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
