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quality High Voltage NPN Silicon Transistor YANGJIE MMSTA42Q with Moisture Sensitivity Level 1 and RoHS Compliance factory
quality High Voltage NPN Silicon Transistor YANGJIE MMSTA42Q with Moisture Sensitivity Level 1 and RoHS Compliance factory

High Voltage NPN Silicon Transistor YANGJIE MMSTA42Q with Moisture Sensitivity Level 1 and RoHS Compliance

Key Attributes
Model Number: MMSTA42Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
DC Current Gain:
25@1mA,10V
Transition Frequency(fT):
50MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
500mV@20mA,2mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMSTA42Q
Package:
SOT-323
Product Description

Product Overview

The MMSTA42Q is an NPN Silicon High Voltage Transistor designed for general purpose switching and linear amplification. It features a high conductance, high breakdown voltage, and is housed in a surface mount SOT-323 package ideally suited for automatic insertion. The epoxy meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. The AEC-Q101 qualified part is designed for automotive electronics applications.

Product Attributes

  • Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
  • Origin: China
  • Material: Silicon
  • Certifications: RoHS, AEC-Q101 Qualified
  • Flammability Rating: UL-94 V-0
  • Moisture Sensitivity Level: 1
  • Package: SOT-323
  • Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
  • Marking: K3M

Technical Specifications

ItemSymbolUnitConditionsValue
Collector-Base VoltageVCBOV300
Collector-Emitter VoltageVCEOV300
Emitter-Base VoltageVEBOV5
Collector CurrentICmA100
Collector Power Dissipation (*)PcmWTa=25200
Thermal Resistance Junction to Ambient (*)RthJAK/W625
Operation Junction TemperatureTj-55 to +150
Storage TemperatureTstg-55 to +150
Collector-base breakdown voltageVCBOVIC=100uA,IE=0300
Collector-emitter breakdown voltageVCEOVIC=1mA, IB=0300
Emitter-base breakdown voltageVEBOVIE=100uA, IC=05
Collector-base cut-off currentICBOuAVCB=200V, IE=00.5
Emitter-base cut-off currentIEBOuAVEB=5V , IC=00.5
DC current gainhFEVCE=10V, IC= 1mA25
VCE=10V, IC=10mA40
VCE=10V, IC=30mA40
Collector-emitter saturation voltageVCE(sat)VIC=20mA, IB= 2mA0.5
Base-emitter saturation voltageVBE(sat)VIC=20mA, IB= 2mA1.0
Transition frequencyFtMHzVCE=20V,IC=10mA,f=30MHz50

2410121531_YANGJIE-MMSTA42Q_C20602059.pdf

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