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quality Silicon Carbide Schottky Diode Wolfspeed C4D05120E 1200 Volt 5 Amp Fast Switching for Power Supplies factory
quality Silicon Carbide Schottky Diode Wolfspeed C4D05120E 1200 Volt 5 Amp Fast Switching for Power Supplies factory
quality Silicon Carbide Schottky Diode Wolfspeed C4D05120E 1200 Volt 5 Amp Fast Switching for Power Supplies factory

Silicon Carbide Schottky Diode Wolfspeed C4D05120E 1200 Volt 5 Amp Fast Switching for Power Supplies

Key Attributes
Model Number: C4D05120E
Product Custom Attributes
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.8V@5A
Reverse Leakage Current (Ir):
150uA@1200V
Current - Rectified:
19A
Mfr. Part #:
C4D05120E
Package:
TO-252-2
Product Description

Product Overview

The Wolfspeed C4D05120E is a 1200 V, 5 A Silicon Carbide Schottky Diode designed for high-frequency operation. It offers zero reverse recovery current, temperature-independent switching behavior, and extremely fast switching. Key benefits include higher efficiency, reduction of heatsink requirements, and the ability to replace bipolar with unipolar rectifiers without thermal runaway when paralleled. This diode is suitable for switch mode power supplies (SMPS), boost diodes in PFC or DC/DC stages, freewheeling diodes in inverter stages, LED lighting power supplies, and AC/DC converters.

Product Attributes

  • Brand: Wolfspeed
  • Material: Silicon Carbide (SiC)
  • Package Type: TO-252-2
  • Certifications: RoHS Compliant

Technical Specifications

Parameter Symbol Value Unit Test Conditions Note
Repetitive Peak Reverse Voltage VRRM 1200 V
Surge Peak Reverse Voltage VRSM 1300 V
DC Blocking Voltage VDC 1200 V
Continuous Forward Current IF 19 A TC = 25 C Fig. 3
9.5 A TC = 135 C
5 A TC = 161 C
Repetitive Peak Forward Surge Current IFRM 26 TC = 25 C, tP = 10 ms, Half Sine Pulse
18 TC = 110 C, tP = 10 ms, Half Sine Pulse
Non-Repetitive Peak Forward Surge Current IFSM 46 TC = 25 C, tP = 10 ms, Half Sine Pulse Fig. 8
36 TC = 110 C, tP = 10 ms, Half Sine Pulse
Non-Repetitive Peak Forward Current IF, Max 400 TC = 25 C, tP = 10 s, Pulse Fig. 8
320 TC = 110 C, tP = 10 s, Pulse
Power Dissipation Ptot 100 W TC = 25 C Fig. 4
43 TC = 110 C
Diode dV/dt Ruggedness dV/dt 200 V/ns VR = 0-960 V
i2t Value i2dt 10.6 A2s TC = 25 C, tP = 10 ms
6.5 TC = 110 C, tP = 10 ms
Operating Junction and Storage Temperature TJ, Tstg -55 to +175 C
Forward Voltage VF 1.4 (Typ.) V IF = 5 A, TJ = 25 C Fig. 1
1.8 (Max.) V IF = 5 A, TJ = 25 C
1.9 (Typ.) V IF = 5 A, TJ = 175 C
3 (Max.) V IF = 5 A, TJ = 175 C
Reverse Current IR 20 (Typ.) A VR = 1200 V, TJ = 25 C Fig. 2
150 (Max.) A VR = 1200 V, TJ = 25 C
40 (Typ.) A VR = 1200 V, TJ = 175 C
300 (Max.) A VR = 1200 V, TJ = 175 C
Total Capacitive Charge QC 27 nC VR = 800 V, IF = 5 A, di/dt = 200 A/S, TJ = 25 C Fig. 5
Total Capacitance C 390 pF VR = 0 V, TJ = 25 C, f = 1 MHz Fig. 6
27 pF VR = 400 V, TJ = 25 C, f = 1 MHz
20 pF VR = 800 V, TJ = 25 C, f = 1 MHz
Capacitance Stored Energy EC 8.0 J VR = 800 V Fig. 7
Thermal Resistance from Junction to Case RJC 1.5 C/W Fig. 9

Product Models & Packages

Part Number Package Marking
C4D05120E TO-252-2 C4D05120
C4D05120 TO-252-2 C4D05120E

2411280056_Wolfspeed-C4D05120E_C7457640.pdf

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