Trench Power MV MOSFET YANGJIE YJD25N10A N Channel Enhancement Mode Transistor for DC DC Converters
Key Attributes
Model Number:
YJD25N10A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
25A
RDS(on):
52mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
54pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
2.071nF@50V
Gate Charge(Qg):
51.4nC@10V
Mfr. Part #:
YJD25N10A
Package:
TO-252
Product Description
Product Overview
The YJD25N10A is a N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation with a high-density cell design for low RDS(ON). This product is Moisture Sensitivity Level 1 and meets UL 94 V-0 flammability rating. It is Halogen Free and suitable for applications such as DC-DC Converters, Power management functions, and Backlighting.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJD25N10A
- Certifications: UL 94 V-0 Flammability Rating, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TC=25 | 25 | A | ||
| Drain Current | ID | TC=100 | 16 | A | ||
| Pulsed Drain Current | IDM | 100 | A | |||
| Total Power Dissipation | PD | TC=25 | 45 | W | ||
| Total Power Dissipation | PD | TC=100 | 18 | W | ||
| Single Pulse Avalanche Energy | EAS | 9.9 | mJ | |||
| Thermal Resistance Junction-to-Case | RθJC | 2.78 | °C/ W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250μA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V, TJ=25 | 1 | μA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V, TJ=150 | 100 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250μA | 1.1 | 1.8 | 3.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=10A | 43 | 52 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=8A | 46 | 56 | mΩ | |
| Diode Forward Voltage | VSD | IS=25A,VGS=0V | 0.8 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 25 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHZ | 2071 | pF | ||
| Output Capacitance | Coss | 73 | pF | |||
| Reverse Transfer Capacitance | Crss | 54 | pF | |||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V,VDS=50V,ID=10A | 51.4 | nC | ||
| Gate-Source Charge | Qgs | 9.1 | nC | |||
| Gate-Drain Charge | Qg | 11.5 | nC | |||
| Reverse Recovery Chrage | Qrr | IF=10A, di/dt=100A/us | 35.3 | nC | ||
| Reverse Recovery Time | trr | 38 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=50V, ID=2A RGEN=3Ω | 10 | ns | ||
| Turn-on Rise Time | tr | 19 | ns | |||
| Turn-off Delay Time | tD(off) | 42 | ns | |||
| Turn-off fall Time | tf | 26 | ns | |||
2410121548_YANGJIE-YJD25N10A_C2942417.pdf
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