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quality Gallium Nitride Broadband RF Transistor Wolfspeed CGH40045P for Microwave and Wireless Communication factory
quality Gallium Nitride Broadband RF Transistor Wolfspeed CGH40045P for Microwave and Wireless Communication factory

Gallium Nitride Broadband RF Transistor Wolfspeed CGH40045P for Microwave and Wireless Communication

Key Attributes
Model Number: CGH40045P
Product Custom Attributes
Drain To Source Voltage:
120V
Operating Temperature -:
-40℃~+150℃
Reverse Transfer Capacitance (Crss@Vds):
0.8pF
Output Capacitance(Coss):
5.9pF
Input Capacitance(Ciss):
19pF
Mfr. Part #:
CGH40045P
Product Description

Product Overview

The MACOM CGH40045 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 28V rail, it offers high efficiency, high gain, and wide bandwidth capabilities, making it suitable for linear and compressed amplifier circuits. The CGH40045 is available in flange and pill package types and is ideal for applications including 2-Way Private Radio, Broadband Amplifiers, Cellular Infrastructure, Test Instrumentation, and Class A, AB, or Linear amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms. Large signal models are available for ADS and MWO.

Product Attributes

  • Brand: MACOM Technology Solutions Inc.
  • Material: Gallium Nitride (GaN)
  • Package Types: 440193 (Flange), 440206 (Pill)

Technical Specifications

Parameter Symbol Rating / Typical Value Units Conditions
Key Features
Small Signal Gain GSS 16 (at 2.0 GHz), 12 (at 4.0 GHz) dB 2.0 GHz, 4.0 GHz
Typical PSAT PSAT 55 W N/A
Efficiency at PSAT 55% % at PSAT
Operation Voltage VDD 28 V N/A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 120 V 25C Case Temperature
Gate-to-Source Voltage VGS -10, +2 V N/A
Storage Temperature TSTG -65 to +150 C N/A
Operating Junction Temperature TJ 225 C N/A
Maximum Forward Gate Current IGMAX 15 mA 25C
Maximum Drain Current IDMAX 6 A Measured on wafer prior to packaging
Soldering Temperature TS 245 C Scaled from PCM data
Screw Torque 40 in-oz N/A
Thermal Resistance, Junction to Case RJC 2.8 C/W Measured for the CGH40045F at PDISS = 56 W
Case Operating Temperature TC -40 to +150 C N/A
DC Characteristics
Gate Threshold Voltage VGS(th) -3.8 to -2.3 VDC VDS = 10 V, ID = 14.4 mA
Gate Quiescent Voltage VGS(Q) -2.7 (Typ) V VDS = 28 V, ID = 400 mA
Saturated Drain Current IDS 11.6 to 14.0 A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 84 (Min) VDC VGS = -8 V, ID = 14.4 mA
RF Characteristics
Small Signal Gain GSS 12.5 to 14 dB TC = 25C, VDD = 28 V, IDQ = 400 mA
Power Output (PSAT) PSAT 40 to 55 W TC = 25C, VDD = 28 V, IDQ = 400 mA, POUT = PSAT
Drain Efficiency 45% (Typ) % TC = 25C, VDD = 28 V, IDQ = 400 mA, POUT = PSAT
Output Mismatch Stress VSWR 10:1 (No damage) N/A VDD = 28 V, IDQ = 400 mA, POUT = 45 W CW
Dynamic Characteristics
Input Capacitance CGS 19.0 (Typ) pF VDS = 28 V, VGS = -8 V, f = 1 MHz
Output Capacitance CDS 5.9 (Typ) pF N/A
Feedback Capacitance CGD 0.8 (Typ) pF N/A
Part Numbers
Flanged Package CGH40045F N/A N/A Package Type 440193
Pill Package CGH40045P N/A N/A Package Type 440206

2412202123_Wolfspeed-CGH40045P_C20558762.pdf

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