Power Electronics Module YANGJIE MG15P12P2 Suitable for Servo Drive Amplifiers Motor Drivers and UPS
Key Attributes
Model Number:
MG15P12P2
Product Custom Attributes
Mfr. Part #:
MG15P12P2
Product Description
Product Overview
The MG15P12P2 S-M315 is a high-performance IGBT module designed for various power electronics applications. It offers low switching losses, low VCE(sat) with a positive temperature coefficient, and includes a fast & soft recovery anti-parallel FWD. The module features a low inductance case, high short circuit capability (10s), and an isolated heatsink using DBC technology, with a maximum junction temperature of 175. It is suitable for motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: MG15P12P2 S-M315
- Certifications: RoHS Compliant
- Website: www.21yangjie.com
- Revision: 1.7
- Date: 9-Apr-24
Technical Specifications
| Component | Parameter | Symbol | Conditions | Value | Unit |
| IGBT-inverter | Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | TC=100,Tvjmax=175 | 15 | A | |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 30 | A | |
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V | |
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 130 | W | |
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =0.5mA,Tvj=25 | 5.2 - 6.5 | V | |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | 1.0 | mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=15A,VGE=15V, Tvj=25 | 1.9 - 2.5 | V | |
| Gate Charge | QG | 0.15 | uC | ||
| Input Capacitance | Cies | VCE=25V, VGE =0V, f=1MHz, Tvj=25 | 0.98 | nF | |
| Reverse Transfer Capacitance | Cres | 0.034 | nF | ||
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V, Tvj = 25 | 400 | nA | |
| Short Circuit Data | ISC | tp10us,VGE=15V,Tvj=150, VCC=900V,VCEM1200V | 55 | A | |
| Diode-inverter | Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 15 | A | ||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 30 | A | |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=125 | 16.0 | A2s | |
| Forward Voltage | VF | IF=15A,Tvj=25 | 2.00 - 2.80 | V | |
| Recovered Charge | Qrr | IF=15A VR=600V -diF/dt =600A/us Tvj=25 | 0.45 | uC | |
| Peak Reverse Recovery Current | Irr | IF=15A VR=600V -diF/dt =600A/us Tvj=25 | 13 | A | |
| Reverse Recovery Energy | Erec | IF=15A VR=600V -diF/dt =600A/us Tvj=25 | 0.49 | mJ | |
| Recovered Charge | Qrr | IF=15A VR=600V -diF/dt =600A/us Tvj=150 | 0.54 | uC | |
| IGBT-brake-chopper | Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | TC=100,Tvjmax=175 | 15 | A | |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 30 | A | |
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V | |
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 130 | W | |
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =0.5mA,Tvj=25 | 5.2 - 6.5 | V | |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=25 | 1.0 | mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=15A,VGE=15V, Tvj=25 | 1.9 - 2.5 | V | |
| Gate Charge | QG | 0.09 | uC | ||
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz, Tvj=25 | 0.98 | nF | |
| Reverse Transfer Capacitance | Cres | 0.034 | nF | ||
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V,Tvj = 25 | 400 | nA | |
| Short Circuit Data | ISC | tp10us,VGE=15V,Tvj=150, VCC=900V,VCEM1200V | 55 | A | |
| Diode-brake-chopper | Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 10 | A | ||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 20 | A | |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=125 | 16.0 | A2s | |
| Forward Voltage | VF | IF=10A,Tvj=25 | 2.00 - 2.80 | V | |
| Recovered Charge | Qrr | IF=10A VR=600V -diF/dt =500A/us Tvj=25 | 0.26 | uC | |
| Peak Reverse Recovery Current | Irr | IF=10A VR=600V -diF/dt =500A/us Tvj=25 | 11 | A | |
| Reverse Recovery Energy | Erec | IF=10A VR=600V -diF/dt =500A/us Tvj=25 | 0.25 | mJ | |
| Recovered Charge | Qrr | IF=10A VR=600V -diF/dt =500A/us Tvj=150 | 0.49 | uC | |
| Diode-rectifier | Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1600 | V |
| Average output Current | IF(AV) | 50/60Hz, sine wave TC=100 | 20 | A | |
| Maximum RMS Current at Rectifier Output | IRMSM | TC=100 | 40 | A | |
| Surge Forward Current | IFSM | VR=0V,tp=10ms,Tvj=25 | 330 | A | |
| I2t-value | I2t | VR=0V,tp=10ms,Tvj=25 | 520 | A2s | |
| Diode Forward Voltage | VF | IF=15A,Tvj=150 | 0.96 | V | |
| Reverse Current | IR | Tvj=150,VR=1600V | 1.0 | mA | |
| NTC-thermistor | Rated Resistance | R25 | 5.0 | k | |
| Deviation of R100 | R/R | TC=100,R100=493.3 | -5 - 5 | % | |
| Power Dissipation | P25 | 20.0 | mW | ||
| B-value | B25/50 | R2=R25exp[B25/50(1/T2-1/(298.15 K))] | 3375 | K | |
| Module Characteristics | Isolation Voltage | Visol | t=1min,f=50Hz | 2500 | V |
| Maximum Junction Temperature | Tjmax | 175 | |||
| Operating Junction Temperature | Tvj op | -40 - 150 | |||
| Storage Temperature | Tstg | -40 - 125 | |||
| Stray-inductance-module | LSCE | 30 | nH | ||
| Module lead resistance, terminals-chip | RCC+EE | TC=25, per switch | 8.00 | m | |
| Module lead resistance, terminals-chip | RAA+CC | 6.00 | m | ||
| Thermal Resistance Junction-to Case | RJC | per IGBT-inverter | 1.15 | K/W | |
| Thermal Resistance Case-to Sink | RCS | per IGBT-inverter | 0.95 | K/W | |
| Mounting Force Per Clamp | F | 20 - 50 | N | ||
| Weight of Module | G | 25 | g |
2512011028_YANGJIE-MG15P12P2_C2942699.pdf
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