650V N Channel MOSFET WPMtek WTM30N65ATL Super Junction with Built In ESD Diode and Stable Operation
Key Attributes
Model Number:
WTM30N65ATL
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
3.8pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.84nF
Pd - Power Dissipation:
34W
Output Capacitance(Coss):
61pF
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
WTM30N65ATL
Package:
TOLL-8L
Product Description
Product Overview
The WTM30N65AF/AMP/ATL/AP is a 650V N-Channel Super-Junction MOSFET designed for high-efficiency power conversion applications. It features low FOM (RDS(on) x Qg), extremely low switching loss, and excellent stability. This MOSFET is 100% avalanche tested and includes a built-in ESD diode, making it suitable for demanding applications.
Product Attributes
- Brand: WPMtek
- Product Series: WTM30N65AF/AMP/ATL/AP
- Technology: Super-Junction MOSFET
- Channel Type: N-Channel
- ESD Protection: Built-in ESD Diode (HBM-C=100pF, R=1.5K): 2000 V
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current - Continuous (TC = 25) | 30.0 | A | |||
| ID | Drain Current - Continuous (TC = 100) | 15.8 | A | |||
| IDM | Drain Current - Pulsed | 1) | 80 | A | ||
| EAS | Single Pulsed Avalanche Energy | 2) | 454 | mJ | ||
| IAR | Avalanche Current | 3.1 | A | |||
| PD | Power Dissipation (TC = 25) TO-247 | 265 | W | |||
| PD | Power Dissipation (TC = 25) TO-220F | 234 | W | |||
| PD | Power Dissipation (TC = 25) TOLL-8L | 196 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 1.1 mA | 2.0 | - | 4.0 | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS = 10 V, ID = 10.2 A | - | 115 | 130 | m |
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = 1mA | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 | - | - | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, TC = 150 | - | - | 100 | A |
| IGSS | Gate-Body Leakage Current | VGS = 20 V, VDS = 0 V | - | - | 1 | A |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 400 V, VGS = 0 V, f = 1.0 MHz | - | 2840 | - | pF |
| Coss | Output Capacitance | - | 61 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 3.8 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Time | VDS = 325 V, ID = 14.3 A, RG = 25 (Note 3,4) | - | 56 | - | ns |
| tr | Turn-On Rise Time | - | 31 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 250 | - | ns | |
| tf | Turn-Off Fall Time | - | 20 | - | ns | |
| Qg | Total Gate Charge | VDS = 520 V, ID = 14.3 A, VGS = 10 V (Note 3,4) | - | 65 | - | nC |
| Qgs | Gate-Source Charge | - | 12 | - | nC | |
| Qgd | Gate-Drain Charge | - | 19 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | - | - | 30 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | - | - | 80 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0 V, IS = 14.3 A | - | - | 1.3 | V |
| trr | Reverse Recovery Time | VR = 400 V, IF = 14.3 A, diF/dt = 100 A/s | - | 450 | - | ns |
| Qrr | Reverse Recovery Charge | - | 7.8 | - | C | |
| Thermal Resistance Characteristics | ||||||
| RJC | Thermal Resistance, Junction-to-Case, Max. | 0.7 | /W | |||
| RJA | Thermal Resistance, Junction-to-Ambient , Max. | 62.5 | /W | |||
Applications
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
- AC to DC Converters
- Telecom, Solar
2511050954_WPMtek-WTM30N65ATL_C46079387.pdf
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