Compact PQFN 5x6mm Half Bridge Intelligent Power Module WXNSIC NSH505PQ for Motor Drive Applications
Key Attributes
Model Number:
NSH505PQ
Product Custom Attributes
Voltage - Supply:
13.5V~16.5V
Quiescent Current(Iq):
360uA
High-side Bias Voltage(Vbs):
13.5V~16.5V
Configuration:
Half Bridge
Operating Temperature:
-40℃~+150℃
Voltage - Isolation:
1500Vrms
Frequency - Switching:
20kHz
Mfr. Part #:
NSH505PQ
Package:
PQFN-26(5x6)
Product Description
NSH505PQ 5A, 500V Half-Bridge IPM
The NSH505PQ is a 5A, 500V half-bridge intelligent power module designed for motor drive applications. It integrates MOSFET gate drivers and bootstrap functionality within a compact PQFN 5x6mm package, offering flexible application for single-phase and three-phase DC brushless motor drives. Key features include under-voltage lockout for both channels, high-level effective input support (3.3V, 5V, and 15V), integrated gate drivers with bootstrap functionality, temperature detection output for MCU control, cross-conduction prevention logic, and high isolation (1500 VRMS min). It boasts a 500V maximum operating voltage and a 5A peak pulse current capability at 25C.
Product Attributes
- Brand: NSIC Technology (Wuxi) Co., LTD
- Origin: Wuxi, China
- Product Name: NSH505PQ
- Package Type: PQFN5x6
- Body Size: 5mm x 6mm
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDSS (Drain-Source Voltage of Each MOSFET) | TC = 25C | 500 | V | ||
| ID (Each MOSFET Current, Continuous) | TC = 25C | 2.5 | A | ||
| ID (Each MOSFET Current, Continuous) | TC = 75C | 1.75 | A | ||
| IDM (Each MOSFET Pulse Current, Peak) | TC = 25C, < 100us | 5 | A | ||
| IDM (Each MOSFET Pulse Current, Peak) | TC = 75C | 3.5 | A | ||
| IDrms (Each MOSFET Current, Rms) | TC = 25C, FPWM <20KHz | 0.85 | Arms | ||
| PD (Maximum Power Dissipation for each MOSFET) | TC = 25C | 14.2 | W | ||
| VCC (Control Supply Voltage) | Applied between VCC and COM | 20 | V | ||
| VBS (High-side Bias Voltage) | Applied between VB and VS | 20 | V | ||
| VIN (Input Signal Voltage) | Applied between VIN and COM | -0.3 | VCC+0.3 | V | |
| VRRMB (Maximum Repetitive Reverse Voltage) | Tc = 25C | 500 | V | ||
| IFB (Forward Current) | Tc = 25C | 0.25 | A | ||
| IFPB (Forward Peak Current, Peak) | Tc = 25C, < 1mS | 0.5 | A | ||
| Tj (Operating Junction Temperature) | -40 | 150 | |||
| TSTG (Storage Temperature) | Tc = 25C | -40 | 125 | ||
| ISO (Isolation Voltage) | 60Hz, Sinusoidal, AC 1 min, between pins and heat-sink plate | 1500 | Vrms | ||
| Rth(J-B) (Thermal resistance, junction to mounting pad, each MOSFET) | For Each MOSFET | 1.0 | C/W | ||
| Rth(J-A) (Thermal resistance, junction to ambient, each MOSFET) | For Each MOSFET | 40 | C/W | ||
| Recommended Operating Conditions | |||||
| VPN (Supply Voltage) | Applied between P and N | 300 | 450 | V | |
| VCC (Control Supply Voltage) | Applied between VCC and COM | 13.5 | 15.0 | 16.5 | V |
| VBS (High-Side Bias Voltage) | Applied between VB and VS | 13.5 | 15.0 | 16.5 | V |
| VIN(ON) (Input ON Threshold Voltage) | Applied between VIN and COM | 3.0 | VCC | V | |
| VIN(OFF) (Input OFF Threshold Voltage) | 0 | 0.6 | V | ||
| tded (Blanking Time for Preventing Arm-Short) | VCC = VBS = 13.5 ~ 16.5 V, Tj <150C | 1.0 | s | ||
| FPWM (PWM Switching Frequency) | Tj <150C | 15 | 20 | kHz | |
| Electrical Characteristics | |||||
| BVDSS (Drain - Source Breakdown Voltage) | VIN = 0 V, ID = 1 mA | 500 | V | ||
| IDSS (Zero Gate Voltage Drain Current) | VIN = 0 V, VDS = 500 V | 1 | mA | ||
| VSD (Drain - Source Diode Forward Voltage) | VCC = VBS = 15V, VIN = 0 V, ID =-0.5 A | 0.9 | V | ||
| RDS(on) (Drain-Source Turn-On Resistance) | VCC = VBS = 15 V, VIN = 5 V, ID =0.5 A | 2 | 2.5 | ohm | |
| tON (Switching Times) | VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH | 920 | ns | ||
| tOFF (Switching Times) | VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH | 520 | ns | ||
| trr (Switching Times) | VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH | 210 | ns | ||
| EON (Switching Energy) | VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH | 40 | J | ||
| EOFF (Switching Energy) | VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0/5 V, Inductive Load L = 3 mH | 10 | J | ||
2505091635_WXNSIC-NSH505PQ_C48735684.pdf
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