High Voltage Silicon N Channel VDMOSFET XCH 7N65M with Enhanced Switching Performance and 650V Rating
Key Attributes
Model Number:
7N65M
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.05Ω@10V,3A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
4.5pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
95W
Input Capacitance(Ciss):
1.05nF@25V
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
7N65M
Package:
TO-252
Product Description
Product Overview
The XCH7N65M is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency. The device is packaged in a RoHS-compliant TO-252 package.
Product Attributes
- Brand: XCH
- Material: Silicon N-Channel
- Certifications: RoHS
Technical Specifications
| Model | VDSS (V) | ID (A) | PD (W) | RDS(ON) Typ. () | TJ, Tstg (C) | RJC (C/W) | RJA (C/W) |
| XCH7N65M | 650 | 7 | 95 | 0.95 | 55 to 150 | 1.32 | 62 |
| XCH4N65M | 650 | 7 | 95 | 0.95 | 55 to 150 | 1.32 | 62 |
| Parameter | Test Conditions | Rating (Min) | Rating (Typ) | Rating (Max) | Units |
| VDSS | VGS=0V,ID=250A | 650 | -- | -- | V |
| BVDSS/TJ | ID=250uA,Reference25 | -- | 0.67 | -- | V/ |
| IDSS | VDS=650V, VGS=0V,Ta=25 | -- | -- | 1.0 | A |
| IDSS | VDS=520V, VGS=0V,Ta=125 | -- | -- | 250 | A |
| IGSS(F) | VGS=+30V | -- | -- | 100 | nA |
| IGSS(R) | VGS=-30V | -- | -- | -100 | nA |
| RDS(ON) | VGS=10V,ID=3A | -- | 0.95 | 1.25 | |
| VGS(TH) | VDS=VGS,ID=250A | 2.0 | -- | 4.0 | V |
| gfs | VDS=15V,ID=3A | -- | 6.5 | -- | S |
| Ciss | VGS=0V VDS=25V f=1.0MHz | -- | 1050 | -- | pF |
| Coss | -- | -- | 90 | -- | pF |
| Crss | -- | -- | 4.5 | -- | pF |
| td(ON) | ID=7A,VDD=325V VGS=10V,Rg=9.1 | -- | 11 | -- | ns |
| tr | -- | -- | 10 | -- | ns |
| td(OFF) | -- | -- | 36 | -- | ns |
| tf | -- | -- | 18 | -- | ns |
| Qg | ID=7A,VDD=325V VGS=10V | -- | 24 | -- | nC |
| Qgs | -- | -- | 5 | -- | nC |
| Qgd | -- | -- | 8 | -- | nC |
| ISD | (Body Diode) | -- | -- | 7 | A |
| ISM | (Body Diode) | -- | -- | 28 | A |
| VSD | IS=7A,VGS=0V | -- | -- | 1.5 | V |
| trr | IS=7A,Tj=25 dIF/dt=100A/s,VGS=0V | -- | 280 | -- | ns |
| Qrr | -- | -- | 1.2 | -- | C |
2305091657_XCH-7N65M_C5455845.pdf
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