Power Management MOSFET YANGJIE YJGD20G10A N Channel Enhancement Mode with Split Gate Trench Design
Key Attributes
Model Number:
YJGD20G10A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@10V;21mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
2 N-Channel
Output Capacitance(Coss):
399pF
Input Capacitance(Ciss):
1.051nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
YJGD20G10A
Package:
DFN5060-8L-DUal
Product Description
Product Overview
The YJGD20G10A is a N-Channel Enhancement Mode Field Effect Transistor featuring split gate trench MOSFET technology for high density cell design, resulting in low RDS(ON) and high-speed switching. It is suitable for DC-DC converters, power management functions, and industrial and motor drive applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | N-Die1 | N-Die2 | Unit |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||
| Drain-source Voltage | VDS | 100 | 100 | V |
| Gate-source Voltage | VGS | 20 | 20 | V |
| Drain Current (TC=25) | ID | 20 | 20 | A |
| Drain Current (TC=70) | ID | 12.5 | 12.5 | A |
| Pulsed Drain Current | IDM | 80 | 80 | A |
| Avalanche energy | EAS | 64 | 64 | mJ |
| Total Power Dissipation (TC=25) | PD | 17 | 17 | W |
| Junction and Storage Temperature Range | TJ ,TSTG | -55~+150 | -55~+150 | |
| Thermal Resistance (Steady-State) | ||||
| Thermal Resistance Junction-to-Ambient | RJA | 60 | 75 | /W |
| Thermal Resistance Junction-to-Case | RJC | 6.2 | 7.5 | /W |
| Electrical Characteristics (TJ=25 unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | |
| Gate-Body Leakage Current | IGSS | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | 1.0 ~ 2.5 | V | |
| Static Drain-Source On-Resistance (VGS=10V, ID=15A) | RDS(ON) | 17 ~ 22 | m | |
| Static Drain-Source On-Resistance (VGS=4.5V, ID=7A) | RDS(ON) | 21 ~ 27 | m | |
| Diode Forward Voltage | VSD | 0.96 ~ 1.3 | V | |
| Maximum Body-Diode Continuous Current | IS | 20 | A | |
| Gate Resistance (f=1MHz) | Rg | 1.2 | ||
| Dynamic Parameters | ||||
| Input Capacitance | Ciss | 1051 | pF | |
| Output Capacitance | Coss | 399 | pF | |
| Reverse Transfer Capacitance | Crss | 18 | pF | |
| Switching Parameters | ||||
| Total Gate Charge | Qg | 16 | nC | |
| Gate-Source Charge | Qgs | 5.6 | nC | |
| Gate-Drain Charge | Qg d | 2.4 | nC | |
| Reverse Recovery Chrage | Qrr | 42 | A | |
| Reverse Recovery Time | trr | 39.8 | ns | |
| Turn-on Delay Time | tD(on) | 39.2 | ns | |
| Turn-on Rise Time | tr | 11 | ns | |
| Turn-off Delay Time | tD(off) | 53.2 | ns | |
| Turn-off fall Time | tf | 15.8 | ns | |
| Peak reverse recovery corrent | Irrm | 3 | A | |
2410121448_YANGJIE-YJGD20G10A_C919609.pdf
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