650V 20A Power MOSFET featuring Multi EPI Super Junction technology XCH GSA20N65E suitable for fast switching applications
Key Attributes
Model Number:
GSA20N65E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
RDS(on):
190mΩ@10V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.51nF@25V
Pd - Power Dissipation:
210W
Mfr. Part #:
GSA20N65E
Package:
TO-220F
Product Description
Product Overview
The GSW/GSA20N65E is a 650V, 20A Power MOSFET from XCH Semiconductor, featuring a Multi-EPI Super-Junction platform. This N-channel MOSFET is designed for applications requiring fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. It is available in TO-220F and TO-247 packages.
Product Attributes
- Brand: XCH Semiconductor
- Product Series: Multi-EPI Super-Junction
- Package Types: TO-220F, TO-247
Technical Specifications
| Symbol | Parameter | GSW20N65E | GSA20N65E | Unit | Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | ||||||||
| VDSS | Drain-Source Voltage | 650 | V | |||||
| ID | Drain Current -Continuous (TC = 25) | 20* | A | |||||
| ID | Drain Current -Continuous (TC = 100) | 12* | A | |||||
| IDM | Drain Current - Pulsed (Note 1) | 45 | A | |||||
| VGSS | Gate-Source voltage | 30 | V | |||||
| EAS | Single Pulsed Avalanche Energy (Note 2) | 485 | mJ | |||||
| IAR | Avalanche Current (Note 1) | 3.5 | A | |||||
| EAR | Repetitive Avalanche Energy (Note 1) | 1 | mJ | |||||
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 15 | V/ns | |||||
| dVds/dt | Drain Source voltage slope (Vds=480V) | 50 | V/ns | |||||
| PD | Power Dissipation (TC = 25) | 210 | W | |||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||||
| TL | Max. Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds | 300 | ||||||
| Electrical Characteristics | ||||||||
| BVDSS | Drain-Source Breakdown Voltage | 650 | V | VGS = 0V, ID = 250A, TJ = 25 | ||||
| BVDSS | Drain-Source Breakdown Voltage | 700 | V | VGS = 0V, ID = 250A, TJ = 150 | ||||
| BVDSS/TJ | Breakdown Voltage Temperature Coefficient | 0.6 | V/ | ID = 250A, Referenced to 25 | ||||
| IDSS | Zero Gate Voltage Drain Current | 10 | A | VDS = 500V, VGS = 650V, Tj=25 | ||||
| IDSS | Zero Gate Voltage Drain Current | 1 | A | VDS = 500V, VGS = 650V, Tj = 150 | ||||
| IGSSF | Gate-Body Leakage Current, Forward | 100 | nA | VGS = 30V, VDS = 0V | ||||
| IGSSR | Gate-Body Leakage Current, Reverse | -100 | nA | VGS = -30V, VDS = 0V | ||||
| VGS(th) | Gate Threshold Voltage | 2 | V | VDS = VGS, ID = 250A | 4 | |||
| RDS(on) | Static Drain-Source On-Resistance | 0.19 | VGS = 10V, ID = 10A | 0.17 | ||||
| gFS | Forward Transconductance | 16 | S | VDS = 40V, ID = 10A | ||||
| Ciss | Input Capacitance | 1510 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | ||||
| Coss | Output Capacitance | 75 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | ||||
| Crss | Reverse Transfer Capacitance | 6 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | ||||
| td(on) | Turn-On Delay Time | 25 | ns | VDD = 520 (Note 4) | ||||
| tr | Turn-On Rise Time | 17 | ns | VDD = 520 (Note 4) | ||||
| td(off) | Turn-Off Delay Time | 130 | ns | VDD = 520 (Note 4) | ||||
| tf | Turn-Off Fall Time | 11 | ns | VDD = 520 (Note 4) | ||||
| Qg | Total Gate Charge | 90 | nC | VDS = 520V, ID = 10A, VGS = 10V (Note 4) | 120 | |||
| Qgs | Gate-Source Charge | 8.5 | nC | VDS = 520V, ID = 10A, VGS = 10V (Note 4) | ||||
| Qgd | Gate-Drain Charge | 13 | nC | VDS = 520V, ID = 10A, VGS = 10V (Note 4) | ||||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 20 | A | |||||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 60 | A | |||||
| VSD | Drain-Source Diode Forward Voltage | 0.9 | V | VGS = 0V, IS = 10A | 1.5 | |||
| trr | Reverse Recovery Time | 475 | ns | VGS = 0V, IS = 10A, dIF/dt =100A/s | ||||
| Qrr | Reverse Recovery Charge | 5.8 | C | VGS = 0V, IS = 10A, dIF/dt =100A/s | ||||
2305091658_XCH-GSA20N65E_C5455784.pdf
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