Power Semiconductor Device ZHHXDZ HX40N120-TO264 IGBT Module Optimized for Induction Heating and UPS
Key Attributes
Model Number:
HX40N120-TO264
Product Custom Attributes
Pd - Power Dissipation:
500W
Td(off):
110ns
Td(on):
15ns
Operating Temperature:
-55℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
200V
Reverse Transfer Capacitance (Cres):
125pF
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.5V@250uA
Gate Charge(Qg):
220nC@15V
Reverse Recovery Time(trr):
75ns
Switching Energy(Eoff):
1.1mJ
Turn-On Energy (Eon):
2.3mJ
Input Capacitance(Cies):
3.2nF
Pulsed Current- Forward(Ifm):
240A
Output Capacitance(Coes):
370pF
Mfr. Part #:
HX40N120-TO264
Package:
TO-264
Product Description
Product Overview
The HX40N120-TO264 AND series of IGBTs, leveraging Non-Punch-Through (NPT) technology, boasts low conduction and switching losses, making it an ideal solution for various applications including induction heating (IH), motor control systems, general-purpose inverters, as well as uninterruptible power supplies (UPS). Features include high speed switching, low saturation voltage (VCE(sat) = 2.6 V @ IC = 40A), high input impedance, and CO-PAK, IGBT with FRD (trr = 75ns typ.).
Product Attributes
- Brand:
- Website: www.haixindianzi.com
- Model: HX40N120-TO264
- Package Type: TO-264
- Package Quantity: 25
- Version: 1.1
- Date: Dec. 2023
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| VCES | Collector-Emitter Voltage | 1200 | V | |||
| VGES | Gate-Emitter Voltage | 25 | V | |||
| IC | Collector Current @TC = 25C | 64 | A | |||
| IC | Collector Current @TC = 100C | 40 | A | |||
| ICM(1) | Pulsed Collector Current | 160 | A | |||
| IF | Diode Continuous Forward Current @TC = 100C | 40 | A | |||
| IFM | Diode Maximum Forward Current | 240 | A | |||
| PD | Maximum Power Dissipation @TC = 25C | 500 | W | |||
| PD | Maximum Power Dissipation @TC = 100C | 200 | W | |||
| SCWT | Short Circuit Withstand Time | VCE = 600V, VGE = 15V, TC = 125C | 10 | s | ||
| TJ | Operating Junction Temperature | -55 | +150 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 seconds | 300 | C | |||
| RJC(IGBT) | Thermal Resistance, Junction-to-Case | -- | 0.25 | C/W | ||
| RJC(DIODE) | Thermal Resistance, Junction-to-Case | -- | 0.7 | C/W | ||
| RJA | Thermal Resistance, Junction-to-Ambient | -- | 25 | C/W | ||
| BVCES | Collector-Emitter Breakdown Voltage | VGE = 0V, IC = 1mA | 1200 | -- | -- | V |
| TJ | Temperature Coefficient of Breakdown Voltage | VGE = 0V, IC = 1mA | 0.6 | V/C | ||
| ICES | Collector Cut-Off Current | VCE = VCES, VGE = 0V | -- | 1 | mA | |
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0V | -- | 250 | nA | |
| VGE(th) | G-E Threshold Voltage | IC = 250A, VCE = VGE | 3.5 | 5.5 | 7.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 40A, VGE = 15V | 2.6 | 3.2 | V | |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 40A, VGE = 15V, TC = 125C | 2.9 | -- | V | |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 64A, VGE = 15V | 3.15 | -- | V | |
| Cies | Input Capacitance | VCE = 30V, VGE = 0V f = 1MHz | 3200 | -- | pF | |
| Coes | Output Capacitance | 370 | -- | pF | ||
| Cres | Reverse Transfer Capacitance | 125 | -- | pF | ||
| td(on) | Turn-On Delay Time | VCC = 600V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 25C | 15 | -- | ns | |
| tr | Rise Time | 20 | -- | ns | ||
| td(off) | Turn-Off Delay Time | 110 | -- | ns | ||
| tf | Fall Time | 40 | 80 | ns | ||
| Eon | Turn-On Switching Loss | 2.3 | 3.45 | mJ | ||
| Eoff | Turn-Off Switching Loss | 1.1 | 1.65 | mJ | ||
| Ets | Total Switching Loss | 3.4 | 5.1 | mJ | ||
| td(on) | Turn-On Delay Time | VCC = 600V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 125C | 20 | -- | ns | |
| tr | Rise Time | 25 | -- | ns | ||
| td(off) | Turn-Off Delay Time | 120 | -- | ns | ||
| tf | Fall Time | 45 | -- | ns | ||
| Eon | Turn-On Switching Loss | 2.5 | -- | mJ | ||
| Eoff | Turn-Off Switching Loss | 1.8 | -- | mJ | ||
| Ets | Total Switching Loss | 4.3 | -- | mJ | ||
| Qg | Total Gate charge | VCE = 600V, IC = 40A, VGE = 15V | 220 | 330 | nC | |
| Qge | Gate-Emitter Charge | 25 | 38 | nC | ||
| Qgc | Gate-Collector Charge | 130 | 195 | nC | ||
| VFM | Diode Forward Voltage | IF = 40A TC = 25C | 3.2 | 4.0 | V | |
| VFM | Diode Forward Voltage | TC = 125C | 2.7 | -- | V | |
| trr | Diode Reverse Recovery Time | IF = 40A, di/dt = 200A/s TC = 25C | 75 | 112 | nS | |
| trr | Diode Reverse Recovery Time | TC = 125C | 130 | -- | nS | |
| Irr | Diode Peak Reverse Recovery Current | TC = 25C | 8 | 12 | A | |
| Irr | Diode Peak Reverse Recovery Current | TC = 125C | 13 | -- | A | |
| Qrr | Diode Reverse Recovery Charge | TC = 25C | 300 | 450 | nC | |
| Qrr | Diode Reverse Recovery Charge | TC = 125C | 845 | -- | nC |
2412051751_ZHHXDZ-HX40N120-TO264_C41399170.pdf
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