load switching transistor YANGJIE YJS4409B featuring Trench Power LV MOSFET technology and UL 94 V 0 rating
Key Attributes
Model Number:
YJS4409B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
18A
RDS(on):
10mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
550pF
Number:
1 P-Channel
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
3.53nF
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
YJS4409B
Package:
SOP-8
Product Description
Product Overview
The YJS4409B is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. Its high-density cell design ensures low RDS(ON) and high-speed switching capabilities. This transistor is designed for applications requiring efficient power management and load switching, with a focus on battery protection. It is manufactured using environmentally conscious processes and meets stringent flammability ratings.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJS4409B
- Technology: Trench Power LV MOSFET
- Moisture Sensitivity Level: 3
- Flammability Rating: UL 94 V-0
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit | |
| Product Summary | |||||||
| VDS | VDS | -30 | V | ||||
| ID | ID | -18 | A | ||||
| RDS(ON) | RDS(ON) | at VGS=-20V | <5.3 | m | |||
| RDS(ON) | RDS(ON) | at VGS=-10V | <6 | m | |||
| RDS(ON) | RDS(ON) | at VGS=-4.5V | <10 | m | |||
| 100% EAS Tested | EAS | ||||||
| Absolute Maximum Ratings | |||||||
| Drain-source Voltage | VDS | TA=25 | -30 | V | |||
| Gate-source Voltage | VGS | 25 | V | ||||
| Drain Current | ID | TA=25 | -18 | A | |||
| Drain Current | ID | TA=100 | -11 | A | |||
| Pulsed Drain Current | IDM | -200 | A | ||||
| Avalanche energy | EAS | 400 | mJ | ||||
| Total Power Dissipation | PD | TA=25 | 3 | W | |||
| Total Power Dissipation | PD | TA=100 | 1.25 | W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | ||||
| Thermal resistance | |||||||
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | 32 | 40 | /W | ||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -30 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | A | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V, Tj=150 | -100 | A | |||
| Gate-Body Leakage Current | IGSS | VGS= 25V, VDS=0V | 100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -1 | -1.8 | -2.5 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-20V, ID=-18A | 4 | 5.3 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-15A | 4.5 | 6 | V | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-10A | 7.5 | 10 | m | ||
| Diode Forward Voltage | VSD | IS=-18A, VGS=0V | -0.85 | -1.2 | V | ||
| Gate resistance | RG | f=1MHz | 7.5 | ||||
| Maximum Body-Diode Continuous Current | IS | -18 | A | ||||
| Dynamic Parameters | |||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 3530 | pF | |||
| Output Capacitance | Coss | 600 | pF | ||||
| Reverse Transfer Capacitance | Crss | 550 | pF | ||||
| Switching Parameters | |||||||
| Total Gate Charge | Qg | VGS=-10V, VDS=-15V, ID=-18A | 38 | nC | |||
| Gate-Source Charge | Qgs | 8 | |||||
| Gate-Drain Charge | Qg | 11 | |||||
| Reverse Recovery Charge | Qrr | IF=-18A, di/dt=100A/us | 33 | nC | |||
| Reverse Recovery Time | trr | 50 | ns | ||||
| Turn-on Delay Time | tD(on) | VGS=-10V, VDD=-15V, ID=-18A RGEN=3 | 6 | ns | |||
| Turn-on Rise Time | tr | 10 | |||||
| Turn-off Delay Time | tD(off) | 78 | |||||
| Turn-off fall Time | tf | 40 | |||||
2410121501_YANGJIE-YJS4409B_C20605951.pdf
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