Power Management P Channel Enhancement Mode Transistor YANGJIE YJG25GP10AQ with Split Gate Technology
Key Attributes
Model Number:
YJG25GP10AQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
25A
RDS(on):
55mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 P-Channel
Output Capacitance(Coss):
220pF
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
2.2nF
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
YJG25GP10AQ
Package:
PDFN5060-8L
Product Description
Product Overview
The YJG25GP10AQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity. This AEC-Q101 qualified transistor is designed for power management applications and portable equipment.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJG25GP10AQ
- Certifications: AEC-Q101 Qualified, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-100V, VGS=0V | - | - | -1 | A |
| Zero Gate Voltage Drain Current (Tj=150) | IDSS | VDS=-100V, VGS=0V, Tj=150 | - | - | -100 | A |
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -1.0 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-20A | - | 42 | 55 | m |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-10A | - | 46 | 60 | m |
| Diode Forward Voltage | VSD | IS=-10A, VGS=0V | - | - | -1.2 | V |
| Input Capacitance | Ciss | VDS=-50V, VGS=0V, f=1MHz | - | 2200 | - | pF |
| Output Capacitance | Coss | VDS=-50V, VGS=0V, f=1MHz | - | 220 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=-50V, VGS=0V, f=1MHz | - | 20 | - | pF |
| Total Gate Charge | Qg | VGS=-10V, VDS=-50V, ID=-12.5A | - | 40 | - | nC |
| Gate-Source Charge | Qgs | VGS=-10V, VDS=-50V, ID=-12.5A | - | 8 | - | nC |
| Gate-Drain Charge | Qg | VGS=-10V, VDS=-50V, ID=-12.5A | - | 9 | - | nC |
| Reverse Recovery Charge | Qrr | IF=-12.5A, di/dt=100A/us | - | 280 | - | nC |
| Reverse Recovery Time | trr | IF=-12.5A, di/dt=100A/us | - | 100 | - | ns |
| Turn-on Delay Time | tD(on) | VGS=-10V, VDD=-50V, ID=-12.5A RGEN=6 | - | 15 | - | ns |
| Turn-on Rise Time | tr | VGS=-10V, VDD=-50V, ID=-12.5A RGEN=6 | - | 40 | - | ns |
| Turn-off Delay Time | tD(off) | VGS=-10V, VDD=-50V, ID=-12.5A RGEN=6 | - | 105 | - | ns |
| Turn-off fall Time | tf | VGS=-10V, VDD=-50V, ID=-12.5A RGEN=6 | - | 110 | - | ns |
2410121501_YANGJIE-YJG25GP10AQ_C20605777.pdf
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