Low Leakage N Channel Enhancement Mode Transistor YANGJIE BSS138B Suitable for Logic Level Interface
Key Attributes
Model Number:
BSS138B
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
600mA
RDS(on):
1.2Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
39pF
Pd - Power Dissipation:
830mW
Output Capacitance(Coss):
6pF
Gate Charge(Qg):
1.8nC@10V
Mfr. Part #:
BSS138B
Package:
SOT-23(TO-236)
Product Description
Product Overview
The BSS138B is a N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It serves as a voltage-controlled small signal switch with low input capacitance and fast switching speed. Designed for low input/output leakage, it is suitable for battery-operated systems and solid-state relays, offering direct logic-level interface capabilities for TTL/CMOS.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: BSS138B
- Certifications: RoHS Compliant
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Halogen Free: Yes
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 50 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=50V, VGS=0V | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=50V, VGS=0V, Tj=150 | - | - | 100 | A |
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 0.8 | 1.2 | 1.6 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=300mA | - | 680 | 1100 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=200mA | - | 750 | 1200 | m |
| Diode Forward Voltage | VSD | IS=300mA, VGS=0V | - | - | 1.2 | V |
| Gate resistance | RG | f=1MHz | - | 18 | - | |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 600 | mA |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | - | 39 | - | pF |
| Output Capacitance | Coss | - | - | 6 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 2.5 | - | pF |
| Reverse Recovery Charge | Qrr | IF=1A, di/dt=100A/us | - | 4 | - | nC |
| Reverse Recovery Time | trr | - | - | 14 | - | ns |
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=25V, ID=1A RGEN=3 | - | 3 | - | ns |
| Turn-on Rise Time | tr | - | - | 19 | - | ns |
| Turn-off Delay Time | tD(off) | - | - | 5 | - | ns |
| Turn-off fall Time | tf | - | - | 23 | - | ns |
| Drain-source Voltage | VDS | - | - | - | 50 | V |
| Gate-source Voltage | VGS | - | - | 20 | - | V |
| Drain Current | ID | TA=25 | - | - | 600 | mA |
| Drain Current | ID | TA=100 | - | - | 380 | mA |
| Pulsed Drain Current | IDM | - | - | - | 2 | A |
| Total Power Dissipation | PD | TA=25 | - | - | 830 | mW |
| Total Power Dissipation | PD | TA=100 | - | - | 330 | mW |
| Junction and Storage Temperature Range | TJ ,TSTG | - | -55 | - | +150 | |
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | - | 120 | 150 | /W |
2411220011_YANGJIE-BSS138B_C20599939.pdf
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