N Channel MOSFET 150V Fast Switching XNRUSEMI XRS180N15H with Excellent Thermal Performance and Low RDS
Key Attributes
Model Number:
XRS180N15H
Product Custom Attributes
Mfr. Part #:
XRS180N15H
Package:
TO-247
Product Description
Product Overview
The XRS180N15H is a N-Channel 150V Fast Switching MOSFET featuring Split Gate Trench MOSFET technology and an excellent package for heat dissipation. Its high-density cell design ensures low RDS(ON), making it suitable for DC-DC converters, power management functions, and synchronous-rectification applications.
Product Attributes
- Brand: power-mos.com
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | VDS Drain-Source Voltage | 150 | V | |||
| VGS Gate-Source Voltage | ±20 | V | ||||
| ID@TC=25 Continuous Drain Current, VGS @ 10V1,6 | 200 | A | ||||
| ID@TC=100 Continuous Drain Current, VGS @ 10V1,6 | 119 | A | ||||
| IDM Pulsed Drain Current2 | 640 | A | ||||
| EAS Single Pulse Avalanche Energy3 | 1225 | mJ | ||||
| IAS Avalanche Current | 70 | A | ||||
| PD@TC=25 Total Power Dissipation4 | 310 | W | ||||
| TSTG Storage Temperature Range | -55 | 150 | ||||
| TJ Operating Junction Temperature Range | -55 | 150 | ||||
| Thermal Data | RJA Thermal Resistance Junction-Ambient1 | 62 | /W | |||
| RJC Thermal Resistance Junction-Case1 | 0.40 | /W | ||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | BVDSS Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 150 | V | ||
| RDS(ON) Static Drain-Source On-Resistance2 | VGS=10V , ID=90A | 4.2 | m | |||
| VGS(th) Gate Threshold Voltage | VGS=VDS , ID =250uA | 2 | 3 | 4 | V | |
| IDSS Drain-Source Leakage Current | VDS=150V , VGS=0V , TJ=25 | 1 | uA | |||
| IDSS Drain-Source Leakage Current | VDS=150V, VGS=0V , TJ=100 | 100 | uA | |||
| IGSS Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | |||
| gfs Forward Transconductance | VDS=5V , ID=60A | 106.0 | S | |||
| Rg Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 3.7 | Ω | |||
| Qg Total Gate Charge | VDS=75V , VGS=10V , ID=60A | 77.9 | nC | |||
| Qgs Gate-Source Charge | 34.2 | nC | ||||
| Qgd Gate-Drain Charge | 15.3 | nC | ||||
| Td(on) Turn-On Delay Time | VGS=10V, VDD=75V, RG=2.7Ω, ID=60A | 22.5 | ns | |||
| Tr Rise Time | 107.8 | ns | ||||
| Td(off) Turn-Off Delay Time | 54.9 | ns | ||||
| Tf Fall Time | 105.7 | ns | ||||
| Ciss Input Capacitance | VDS=75V , VGS=0V , f=1MHz | 5643 | pF | |||
| Coss Output Capacitance | 802 | pF | ||||
| Crss Reverse Transfer Capacitance | 29 | pF | ||||
| Diode Characteristics | IS Continuous Source Current1,4 | VG=VD=0V , Force Current | 180 | A | ||
| VSD Diode Forward Voltage2 | VGS=0V , IS=60A , TJ=25C | 1.4 | V | |||
| trr Reverse Recovery Time | IF=60A , di/dt=100A/µs , TJ=25C | 102.6 | nS | |||
| Qrr Reverse Recovery Charge | 293.4 | nC |
2512021845_XNRUSEMI-XRS180N15H_C53069598.pdf
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