Yangjie MG100HF12TLC1 IGBT module designed for soft switching welding machines motor drives and UPS
Key Attributes
Model Number:
MG100HF12TLC1
Product Custom Attributes
Td(off):
232ns
Pd - Power Dissipation:
785W
Td(on):
129ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.27nF
Input Capacitance(Cies):
8.8nF
IGBT Type:
IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@4mA
Gate Charge(Qg):
0.68uC
Pulsed Current- Forward(Ifm):
200A
Switching Energy(Eoff):
6.7mJ
Turn-On Energy (Eon):
6.2mJ
Mfr. Part #:
MG100HF12TLC1
Product Description
Product Overview
The MG100HF12TLC1 S-M415 is a high-performance IGBT module designed for inverter applications in motor drives, AC/DC servo drives, UPS systems, and soft-switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and includes an ultra-fast & soft recovery anti-parallel FWD. With a maximum junction temperature of 175, this module offers excellent reliability and performance.
Product Attributes
- Brand: Yangjie
- Certifications: RoHS COMPLIANT
- Origin: China (implied by website and company name)
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit | Min. | Typ. | Max. |
| IGBT Absolute Maximum Ratings | |||||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC=1mA, Tvj=25 | 1200 | V | |||
| Continuous Collector Current | IC | TC=100 | 100 | A | |||
| Repetitive Peak Collector Current | ICRM | tp=1ms | 200 | A | |||
| Gate-Emitter Voltage | VGES | Tvj=25 | V | 20 | |||
| Total Power Dissipation | Ptot | TC=25, Tvjmax=175 | 785 | W | |||
| IGBT Characteristic Values | |||||||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC=4mA, Tvj=25 | V | 5.2 | 5.8 | 6.5 | |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V, VGE=0V, Tvj=25 | mA | 1.0 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=100A, VGE=15V, Tvj=25 | V | 1.90 | 2.20 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=100A, VGE=15V, Tvj=125 | V | 2.10 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=100A, VGE=15V, Tvj=150 | V | 2.18 | |||
| Gate Charge | QG | 0.68 | uC | ||||
| Internal Gate Resistance | Rgint | 7.5 | |||||
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz, Tvj=25 | 8.8 | nF | |||
| Reverse Transfer Capacitance | Cres | 0.27 | nF | ||||
| Gate-Emitter leakage current | IGES | VCE=0 V, VGE=20V, Tvj = 25 | nA | 400 | |||
| Turn-on Delay Time | td(on) | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=25 | 129 | ns | |||
| Rise Time | tr | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=25 | 40 | ns | |||
| Turn-off Delay Time | td(off) | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=25 | 232 | ns | |||
| Fall Time | tf | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=25 | 176 | ns | |||
| Energy Dissipation During Turn-on Time | Eon | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=25 | 6.2 | mJ | |||
| Energy Dissipation During Turn-off Time | Eoff | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=25 | 6.7 | mJ | |||
| Turn-on Delay Time | td(on) | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=150 | 105 | ns | |||
| Rise Time | tr | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=150 | 46 | ns | |||
| Turn-off Delay Time | td(off) | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=150 | 260 | ns | |||
| Fall Time | tf | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=150 | 309 | ns | |||
| Energy Dissipation During Turn-on Time | Eon | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=150 | 10.7 | mJ | |||
| Energy Dissipation During Turn-off Time | Eoff | IC=100A, VCE=600V, VGE= 15V, RG=1.5, Tvj=150 | 10.3 | mJ | |||
| SC Data | Isc | tp10us, VGE=15V, Tvj=150, Vcc=900V, VCEM1200V | 460 | A | |||
| Diode Absolute Maximum Ratings | |||||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V | |||
| Continuous DC Forward Current | IF | 100 | A | ||||
| Repetitive Peak Forward Current | IFRM | tp=1ms | 200 | A | |||
| Diode Characteristic Values | |||||||
| Forward Voltage | VF | IF=100A, Tvj=25 | V | 1.75 | 2.80 | ||
| Forward Voltage | VF | IF=100A, Tvj=125 | V | 1.50 | |||
| Forward Voltage | VF | IF=100A, Tvj=150 | V | 1.40 | |||
| Recovered Charge | Qrr | IF =100 A, VR=600V, -diF/dt =1900A/us, Tvj=25 | 2.99 | uC | |||
| Peak Reverse Recovery Current | Irr | IF =100 A, VR=600V, -diF/dt =1900A/us, Tvj=25 | 115 | A | |||
| Reverse Recovery Energy | Erec | IF =100 A, VR=600V, -diF/dt =1900A/us, Tvj=25 | 2.7 | mJ | |||
| Recovered Charge | Qrr | IF =100 A, VR=600V, -diF/dt =1900A/us, Tvj=125 | 18.4 | uC | |||
| Peak Reverse Recovery Current | Irr | IF =100 A, VR=600V, -diF/dt =1900A/us, Tvj=125 | 119 | A | |||
| Reverse Recovery Energy | Erec | IF =100 A, VR=600V, -diF/dt =1900A/us, Tvj=125 | 6.6 | mJ | |||
| Module Characteristics | |||||||
| Isolation Voltage | Visol | t=1min, f=50Hz | 2500 | V | |||
| Maximum Junction Temperature | Tjmax | 175 | |||||
| Operating Junction Temperature | Tvj op | -40 | 150 | ||||
| Storage Temperature | Tstg | -40 | 125 | ||||
| Thermal Resistance Junction to Case | RJC | per IGBT | 0.19 | K/W | |||
| Thermal Resistance Junction to Case | RJC | per Diode | 0.46 | K/W | |||
| Thermal Resistance Case to Sink | RCS | Conductive grease applied | 0.05 | K/W | |||
| Module Electrodes Torque | Mt | Recommended(M5) | Nm | 2.5 | 5.0 | ||
| Module-to-Sink Torque | Ms | Recommended(M6) | Nm | 3.0 | 5.0 | ||
| Weight of Module | G | 150 | g | ||||
2508211052_YANGJIE-MG100HF12TLC1_C2942687.pdf
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