Amplification and Switching Dual PNP Transistor XZT MMDT3906 SOT363 Package for Electronic Circuits
Key Attributes
Model Number:
MMDT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
DC Current Gain:
100@10mA,1V
Transition Frequency(fT):
250MHz
Vce Saturation(VCE(sat)):
400mV@0.5mA,5mA
Number:
2 PNP
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMDT3906
Package:
SOT-363
Product Description
Product Overview
The MMDT3906 is a dual PNP transistor constructed with an epitaxial planar die. It is ideal for low power amplification and switching applications.
Product Attributes
- Brand: XT ELECTRONICS
- Model: MMDT3906
- Type: DUAL TRANSISTOR (PNP+PNP)
- Package: SOT-363
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Typ | Max | Units |
| VCBO | Collector-Base Voltage | -40 | V | |||
| VCEO | Collector-Emitter Voltage | -40 | V | |||
| VEBO | Emitter-Base Voltage | -5 | V | |||
| IC | Collector Current - Continuous | -0.2 | A | |||
| PC | Collector Power Dissipation | 0.2 | W | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC=-10A,IE=0 | -40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-1mA,IB=0 | -40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=-10A,IC=0 | -5 | V | ||
| ICEX | Collector cut-off current | VCE=-30V,VEB(OFF)=-3V | -50 | nA | ||
| IEBO | Base cut-off current | VEB=-5V,IC=0 | -50 | nA | ||
| hFE | DC current gain | VCE=-1V,IC=-0.1mA | 60 | |||
| VCE=-1V,IC=-1mA | 80 | |||||
| VCE=-1V,IC=-10mA | 100 | |||||
| VCE=-1V,IC=-50mA | 300 | |||||
| VCE=-1V,IC=-100mA | 30 | |||||
| VCE(sat) | Collector-emitter saturation voltage | IC=-10mA,IB=-1mA | -0.25 | V | ||
| IC=-50mA,IB=-5mA | -0.4 | V | ||||
| VBE(sat) | Base-emitter saturation voltage | IC=-10mA,IB=-1mA | -0.65 | -0.85 | V | |
| IC=-50mA,IB=-5mA | -0.95 | V | ||||
| fT | Transition frequency | VCE=-20V,IC=-10mA,f=100MHz | 250 | MHz | ||
| Cob | Collector output capacitance | VCB=-5V,IE=0,f=1MHz | 4.5 | pF | ||
| NF | Noise figure | VCE=-5V,IC=-0.1mA,f=1KHz,Rg=1K | 4 | dB | ||
| td | Delay time | VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS | ||
| tr | Rise time | VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS | ||
| tS | Storage time | VCC=-3V, IC=-10mA IB1=-IB2=- 1mA | 225 | nS | ||
| tf | Fall time | VCC=-3V, IC=-10mA IB1=-IB2=- 1mA | 75 | nS |
2410121858_XZT-MMDT3906_C5805839.pdf
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