High voltage IGBT transistor ZHHXDZ HX40N120-TO247 1200V module for welding and converter applications
Key Attributes
Model Number:
HX40N120-TO247
Product Custom Attributes
Td(off):
290ns
Pd - Power Dissipation:
483W
Td(on):
30ns
Operating Temperature:
-40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
130pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Gate Charge(Qg):
185nC@15V
Reverse Recovery Time(trr):
355ns
Switching Energy(Eoff):
1.2mJ
Turn-On Energy (Eon):
3.2mJ
Input Capacitance(Cies):
2.33nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
185pF
Mfr. Part #:
HX40N120-TO247
Package:
TO-247
Product Description
Product Overview
The HX40N120 is a 1200V high-speed switching series third-generation IGBT from Zhuhai Haixin Electronics Co., Ltd. It features low EMI, a very soft, fast recovery anti-parallel diode, and a maximum junction temperature of 175C. This product is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. It is ideal for use in uninterruptible power supplies, welding converters, and converters with high switching frequencies.
Product Attributes
- Brand: Haixin ()
- Origin: Zhuhai, China
- Certifications: JEDEC qualified, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCE | 1200 | V | |
| DC collector current, limited by Tvjmax | IC | TC = 25C | 80.0 | A |
| DC collector current, limited by Tvjmax | IC | TC = 100C | 40.0 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 160.0 | A | |
| Turn off safe operating area | VCE 1200V, Tvj 175C | - 160.0 | A | |
| Diode forward current, limited by Tvjmax | IF | TC = 25C | 40.0 | A |
| Diode forward current, limited by Tvjmax | IF | TC = 100C | 20.0 | A |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 160.0 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Short circuit withstand time | tSC | VGE = 15.0V, VCC 600V, Tvj = 175C | 10 | s |
| Power dissipation | Ptot | TC = 25C | 483.0 | W |
| Power dissipation | Ptot | TC = 100C | 220.0 | W |
| Operating junction temperature | Tvj | -40...+175 | C | |
| Storage temperature | Tstg | -55...+150 | C | |
| Soldering temperature, wave soldering | 1.6mm from case for 10s | 260 | C | |
| Mounting torque, M3 screw | M | 0.6 | Nm | |
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | Rth(j-c) | 0.31 | K/W | |
| Diode thermal resistance, junction - case | Rth(j-c) | 1.11 | K/W | |
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W | |
| Electrical Characteristic, at Tvj = 25C, unless otherwise specified | ||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.50mA | 1200 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 25C | 2.05 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 125C | 2.50 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 175C | 2.70 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 20.0A, Tvj = 25C | 1.80 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 20.0A, Tvj = 175C | 1.85 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 40.0A, Tvj = 25C | 2.40 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 40.0A, Tvj = 125C | 2.60 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 40.0A, Tvj = 175C | 2.60 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 1.00mA, VCE = VGE | 5.8 | V |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tvj = 25C | 250.0 | A |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tvj = 175C | 2500.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 600 | nA |
| Transconductance | gfs | VCE = 20V, IC = 15.0A | 20.0 | S |
| Dynamic Characteristic, at Tvj = 25C, unless otherwise specified | ||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 2330 | pF |
| Output capacitance | Coes | 185 | pF | |
| Reverse transfer capacitance | Cres | 130 | pF | |
| Gate charge | QG | VCC = 960V, IC = 40.0A, VGE = 15V | 185.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Short circuit collector current | IC(SC) | VGE = 15.0V, VCC 600V, tSC 10s, Tvj = 175C | 139 | A |
| Switching Characteristic, Inductive Load, at Tvj = 25C | ||||
| Turn-on delay time | td(on) | VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 12.0 | 30 | ns |
| Rise time | tr | 57 | ns | |
| Turn-off delay time | td(off) | 290 | ns | |
| Fall time | tf | 16 | ns | |
| Turn-on energy | Eon | 3.20 | mJ | |
| Turn-off energy | Eoff | 1.20 | mJ | |
| Total switching energy | Ets | 4.40 | mJ | |
| Diode Characteristic, at Tvj = 25C | ||||
| Diode reverse recovery time | trr | VR = 600V, IF = 40.0A, diF/dt = 500A/s | 355 | ns |
| Diode reverse recovery charge | Qrr | 1.90 | C | |
| Diode peak reverse recovery current | Irrm | 12.8 | A | |
| Diode peak rate of fall of reverse recovery current | dirr/dt | -150 | A/s | |
| Switching Characteristic, Inductive Load, at Tvj = 175C | ||||
| Turn-on delay time | td(on) | VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 12.0 | 29 | ns |
| Rise time | tr | 49 | ns | |
| Turn-off delay time | td(off) | 366 | ns | |
| Fall time | tf | 48 | ns | |
| Turn-on energy | Eon | 4.40 | mJ | |
| Turn-off energy | Eoff | 2.60 | mJ | |
| Total switching energy | Ets | 7.00 | mJ | |
| Diode Characteristic, at Tvj = 175C | ||||
| Diode reverse recovery time | trr | VR = 600V, IF = 40.0A, diF/dt = 500A/s | 639 | ns |
| Diode reverse recovery charge | Qrr | 4.30 | C | |
| Diode peak reverse recovery current | Irrm | 16.0 | A | |
| Diode peak rate of fall of reverse recovery current | dirr/dt | -105 | A/s | |
2412051751_ZHHXDZ-HX40N120-TO247_C41399171.pdf
Related Products
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
