General Purpose Amplifier YANGJIE MMBTA56Q with AECQ101 Qualification and Halogen Free Epoxy Material
Key Attributes
Model Number:
MMBTA56Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
250mV@100mA,10mA
Type:
PNP
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
MMBTA56Q
Package:
SOT-23
Product Description
Product Overview
The MMBTA56Q is a PNP General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. This amplifier offers high conductance and is AEC-Q101 qualified. It is suitable for applications in automotive electronics.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: Yangzhou
- Certifications: RoHS, AEC-Q101
- Flammability Rating: UL-94 V-0
- Material: Halogen free epoxy
- Moisture Sensitivity Level: 1
Technical Specifications
| Item | Symbol | Unit | Conditions | Min | Typ | Max |
| Collector-Base Voltage | VCBO | V | -80 | |||
| Collector-Emitter Voltage | VCEO | V | -80 | |||
| Emitter-Base Voltage | VEBO | V | -4 | |||
| Collector Current -Continuous | IC | mA | -500 | |||
| Total Device Dissipation | PD | mW | (*) Ta=25 | 300 | ||
| Thermal Resistance Junction to Ambient | RthJA | /W | 417 | |||
| Junction Temperature | Tj | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Collector-base breakdown voltage | VCBO | V | IC= -100uA, IE=0 | -80 | ||
| Collector-emitter breakdown voltage | VCEO | V | IC= -1mA, IB=0 | -80 | ||
| Emitter-base breakdown voltage | VEBO | V | IE= -100uA, IC=0 | -4 | ||
| Collector-base cut-off current | ICBO | uA | VCB=-80V, IE =0 | -0.1 | ||
| Collector-emitter cut-off current | ICES | uA | VCE=-60V, IB =0 | -0.1 | ||
| Emitter-base cut-off current | IEBO | uA | VEB=-3 V , IC=0 | -0.1 | ||
| DC current gain | hFE | VCE= -1V, IC= -10mA | 100 | |||
| DC current gain | hFE | VCE= -1V, IC=-100mA | 100 | |||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=-100mA, IB= -10mA | -0.25 | ||
| Base-emitter saturation voltage | VBE(sat) | V | IC=-100mA, IB= -10mA | -1.2 | ||
| Transition frequency | fT | MHz | VCE=-2V,IC=-10mA,f=100MHz | 100 |
2411071802_YANGJIE-MMBTA56Q_C20168697.pdf
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