NPN PNP digital transistor YANGJIE UMD3NQ designed for compact inverter circuits and load switching
Key Attributes
Model Number:
UMD3NQ
Product Custom Attributes
DC Current Gain:
30@10mA,5V
Emitter-Base Voltage VEBO:
10V
Current - Collector(Ic):
100mA
Operating Temperature:
-55℃~+150℃
Type:
NPN+PNP
Output Voltage(VO(on)):
300mV
Transition Frequency(fT):
250MHz
Input Resistor:
13kΩ
Number:
1 NPN Pre-Biased, 1 PNP Pre-Biased
Resistor Ratio:
1.2
Pd - Power Dissipation:
150mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMD3NQ
Package:
SOT-363
Product Description
Product Overview
The UMD3NQ is a series of NPN+PNP digital transistors from Yangzhou Yangjie Electronic Technology Co., Ltd., featuring built-in resistors. These transistors simplify circuit design by enabling the configuration of inverter circuits without external input resistors, reducing board space and component count. They are suitable for applications such as IC input control, switching loads, and digital systems.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Product Series: UMD3NQ
- Certifications: AEC-Q101 qualified (suffix "Q"), RoHS compliant
- Flammability Rating: UL-94 V-0
- Moisture Sensitivity Level: 1
- Package: SOT-363
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Marking: D3
Technical Specifications
| Item | Symbol | Unit | Conditions | Min | Typ | Max |
| DTR1-NPN | ||||||
| Collector-Emitter Voltage | VCEO | V | 50 | |||
| Collector-Base Voltage | VCBO | V | 50 | |||
| Emitter-Base Voltage | VEBO | V | 10 | |||
| Supply Voltage | VCC | V | 50 | |||
| Input Voltage | VIN | V | -10 | +40 | ||
| Collector Current | IC | mA | 100 | |||
| Power Dissipation | PD | mW | (*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch | 150 | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | TSTG | -55 | 150 | |||
| Input voltage (off) | VI(off) | V | VCC=5V, IO=100uA | 0.5 | - | |
| Input voltage (on) | VI(on) | V | VO=0.3V, IO=10mA | - | 3 | |
| Output voltage (on) | Vo(on) | V | IO=10mA, II=0.5 mA | - | 0.3 | |
| Input current | II | mA | VI=5V | - | 0.88 | |
| Output current (off) | IO(off) | uA | VCC=50V, VI=0 | - | 0.5 | |
| DC current gain | GI | Vo=5V, Io=5mA | 30 | - | - | |
| Input resistance | R1 | k | 7 | 10 | 13 | |
| Resistance ratio | R2/R1 | 0.8 | 1 | 1.2 | ||
| Transition frequency | fT | MHz | VCE=10V, IE=5mA, f=100MHz | - | 250 | - |
| DTR2-PNP | ||||||
| Collector-Emitter Voltage | VCEO | V | -50 | |||
| Collector-Base Voltage | VCBO | V | -50 | |||
| Emitter-Base Voltage | VEBO | V | -10 | |||
| Supply Voltage | VCC | V | -50 | |||
| Input Voltage | VIN | V | -40 | +10 | ||
| Collector Current | IC | mA | -100 | |||
| Power Dissipation | PD | mW | (*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch | 150 | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | TSTG | -55 | 150 | |||
| Input voltage (off) | VI(off) | V | VCC= -5V,IO= -100uA | -0.5 | - | |
| Input voltage (on) | VI(on) | V | VO= -0.3V,IO= -10mA | - | -3 | |
| Output voltage (on) | Vo(on) | V | IO= -10mA/ II= -0.5 mA | - | -0.3 | |
| Input current | II | mA | VI=-5V | - | -0.88 | |
| Output current (off) | IO(off) | uA | VCC=-50V, VI=0 | - | -0.5 | |
| DC current gain | GI | Vo= -5V, Io= -5mA | 30 | - | - | |
| Input resistance | R1 | k | 7 | 10 | 13 | |
| Resistance ratio | R2/R1 | 0.8 | 1 | 1.2 | ||
| Transition frequency | fT | MHz | VCE= -10V, IC= -5mA, f=100MHz | - | 250 | - |
2410121545_YANGJIE-UMD3NQ_C20605419.pdf
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