Complementary N Channel P Channel MOSFET YANGJIE YJS07NP03B for wireless charging and load switching
Key Attributes
Model Number:
YJS07NP03B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A
RDS(on):
14mΩ@10V;15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF;160pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
75pF;170pF
Input Capacitance(Ciss):
380pF;1.22nF
Pd - Power Dissipation:
1.9W
Gate Charge(Qg):
12.5nC@10V;24nC@10V
Mfr. Part #:
YJS07NP03B
Package:
SOP-8-Dual
Product Description
Product Overview
The YJS07NP03B is a complementary N-Channel and P-Channel MOSFET featuring Trench Power LV MOSFET technology for high density cell design, resulting in low RDS(ON) and high-speed switching. It is designed for applications requiring efficient power management, including wireless chargers and load switches. The product meets UL 94 V-0 flammability rating and is Halogen Free.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJS07NP03B
- Certifications: RoHS COMPLIANT, UL 94 V-0 Flammability Rating, Halogen Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | NMOS (Typ) | PMOS (Typ) | Units |
| Product Summary | ||||
| Drain-source Voltage | VDS | 30 | -30 | V |
| Continuous Drain Current (TA=25) | ID | 7 | -7 | A |
| RDS(ON) (at VGS=10V) | RDS(ON) | 18m | 20m | m |
| RDS(ON) (at VGS=4.5V) | RDS(ON) | 30m | 28m | m |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||
| Drain-source Voltage | VDS | 30 | -30 | V |
| Gate-source Voltage | VGS | 20 | 20 | V |
| Drain Current (TA=25) | ID | 7 | -7 | A |
| Drain Current (TA=100) | ID | 4.4 | -4.4 | A |
| Pulsed Drain Current | IDM | 60 | -100 | A |
| Avalanche energy (NMOS: IAS=8.05A, PMOS: IAS=-13.3A) | EAS | 16 | 44 | mJ |
| Total Power Dissipation (TA=25) | PD | 1.9 | 2.2 | W |
| Total Power Dissipation (TA=100) | PD | 0.75 | 0.9 | W |
| Junction and Storage Temperature Range | TJ ,TSTG | -55+150 | ||
| NMOS Electrical Characteristics (TJ=25 unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | - | V |
| Zero Gate Voltage Drain Current | IDSS | 1 | - | A |
| Gate-Body Leakage Current | IGSS | 100 | - | nA |
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.2 | - | V |
| Static Drain-Source On-Resistance (VGS=10V, ID=7A) | RDS(on) | 14 - 18 | - | m |
| Static Drain-Source On-Resistance (VGS=4.5V, ID=5A) | RDS(on) | 23 - 30 | - | m |
| Diode Forward Voltage (IS=7A, VGS=0V) | VSD | 0.85 - 1.2 | - | V |
| Input Capacitance | Ciss | 380 | - | pF |
| Output Capacitance | Coss | 75 | - | pF |
| Reverse Transfer Capacitance | Crss | 60 | - | pF |
| Total Gate Charge (VGS=10V, VDS=15V, ID=7A) | Qg | 12.5 | - | nC |
| PMOS Electrical Characteristics (TJ=25 unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | - | -30 | V |
| Zero Gate Voltage Drain Current | IDSS | - | -1 | A |
| Gate-Body Leakage Current | IGSS | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | - | -1.0 - -2.5 | V |
| Static Drain-Source On-Resistance (VGS=-10V, ID=-7A) | RDS(on) | - | 15 - 20 | m |
| Static Drain-Source On-Resistance (VGS=-4.5V, ID=-5A) | RDS(on) | - | 20.5 - 28 | m |
| Diode Forward Voltage (IS=-7A, VGS=0V) | VSD | - | -0.85 - -1.2 | V |
| Input Capacitance | Ciss | - | 1220 | pF |
| Output Capacitance | Coss | - | 170 | pF |
| Reverse Transfer Capacitance | Crss | - | 160 | pF |
| Total Gate Charge (VGS=-10V, VDS=-15V, ID=-7A) | Qg | - | 24 | nC |
2401111816_YANGJIE-YJS07NP03B_C20605945.pdf
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